Electron-beam-induced current study of stacking faults and partial dislocations in 4H-SiC Schottky diode

2008 ◽  
Vol 93 (3) ◽  
pp. 033514 ◽  
Author(s):  
Bin Chen ◽  
Jun Chen ◽  
Takashi Sekiguchi ◽  
Takasumi Ohyanagi ◽  
Hirofumi Matsuhata ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Diode ◽  
Stacking Faults ◽  
Induced Current ◽  
Partial Dislocations ◽  
Electron Beam Induced Current

Ebic Study of Fe Precipitation on Bulk Stacking Fault in Czochralski-Grown Silicon

1997 ◽  
Vol 469 ◽  
Author(s):  
B. Shen ◽  
T. Sekiguchi ◽  
P. Chen ◽  
K. Yang ◽  
Z. Z. Chen ◽  
...  
Keyword(s):  
Electron Beam ◽  
Stacking Faults ◽  
Stacking Fault ◽  
Induced Current ◽  
Partial Dislocations ◽  
Electron Beam Induced Current ◽  
Oxygen Precipitates ◽  
Fe Impurities

ABSTRACTFe precipitation on bulk stacking faults in Czochralski-grown silicon are investigated by means of the electron-beam-induced-current (EBIC) technique and other techniques. It is found that Fe impurities only precipitate on Frank partial dislocations bounding stacking faults when the specimen is cooled slowly; however, they precipitate on both Frank partials and fault planes when the specimen is cooled fast. It is explained that small oxygen precipitates on fault planes, together with Frank partials, serve as the gettering centers for Fe impurities in the fast cooled specimen.

Recombination Behaviour of Stacking Faults in SiC p-i-n Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 367-370 ◽  
Author(s):  
S.I. Maximenko ◽  
P. Pirouz ◽  
Tangali S. Sudarshan
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
Quantum Wells ◽  
Radiative Recombination ◽  
Stacking Faults ◽  
Nonradiative Recombination ◽  
Induced Current ◽  
Pin Diodes ◽  
Partial Dislocations ◽  
Electron Beam Induced Current

In this paper the electrical activity of stacking faults and that of their bounding partial dislocations in degraded PiN diodes has been investigated by the technique of electron beam induced current (EBIC). The recombination behavior of C- and Si-core dislocations is discussed. It is proposed that nonradiative recombination significantly exceeds radiative recombination on both the C- and Si-core partial dislocations. At the same time, predominantly radiative recombination takes place in the faulted planes that presumably act as quantum wells.

Electron beam-induced current investigation of GaN Schottky diode

2005 ◽  
Vol 34 (7) ◽  
pp. 1059-1064 ◽  
Author(s):  
A. Matoussi ◽  
T. Boufaden ◽  
S. Guermazi ◽  
Y. Mlik ◽  
B. El Jani ◽  
...  
Keyword(s):  
Electron Beam ◽  
Schottky Diode ◽  
Induced Current ◽  
Current Investigation ◽  
Electron Beam Induced Current

EBIC Study of Electrical Activity of Stacking Faults in Multicrystalline Sheet Silicon

2005 ◽  
Vol 108-109 ◽  
pp. 627-630
Author(s):  
Jinggang Lu ◽  
George A. Rozgonyi ◽  
James Rand ◽  
Ralf Jonczyk
Keyword(s):  
Electron Beam ◽  
Electrical Activity ◽  
High Spatial Resolution ◽  
Stacking Faults ◽  
Interstitial Oxygen ◽  
Induced Current ◽  
Contrast Variation ◽  
Lifetime Measurements ◽  
Recombination Lifetime ◽  
Electron Beam Induced Current

The electrical activity of stacking faults (SFs) in multicrystalline sheet silicon has been examined by correlating EBIC(electron beam induced current), preferential defect etching, and microwave photo-conductance decay (PCD) lifetime measurements. Following a three hour 1060 0C annealing the interstitial oxygen concentration decreased from 14 to 4.5 x 1017 cm-3, during which time a high density of SFs were generated in the center of individual large grains. Subsequent EBIC contrast variation within individual large grains was correlated with the local SF density revealed by preferential etching. In addition, a more quantitative intra-grain lifetime was obtained from high spatial resolution PCD measurements. It was found that an SF density of 1 to 2 x 106 cm-2 produces a lifetime limitation in sheet silicon which corresponds to a recombination lifetime of ~2 µs.

Different Dissociation Behavior of [11-20] and Non-[11-20] Basal Plane Dislocations in 4H-SiС under Electron Beam Irradiation

2012 ◽  
Vol 725 ◽  
pp. 45-48
Author(s):  
Yong Zhao Yao ◽  
Yoshihiro Sugawara ◽  
Yukari Ishikawa ◽  
Katsunori Danno ◽  
Hiroshi Suzuki ◽  
...  
Keyword(s):  
Electron Beam ◽  
Basal Plane ◽  
Electron Beam Irradiation ◽  
Minimum Energy ◽  
Dislocation Line ◽  
Induced Current ◽  
Beam Irradiation ◽  
Etch Pit ◽  
Partial Dislocations ◽  
Electron Beam Induced Current

Electron beam induced current (EBIC) and etch pit method have been used to study the dissociation behavior of basal plane dislocations (BPDs) in 4H-SiC under electron beam irradiation. When 20 kV scanning electron beam was applied for 1 h, it has been found that BPDs whose dislocation lines were along [11-20] off-cut direction dissociated into partial dislocations (PDs) forming a stacking fault (SF) between them; while no dissociation was found for BPDs extending along other directions. These results are discussed in terms of different formation energy of SFs expanding from a pure screw type and a mixed type BPD. In addition, the angle between dislocation line of a BPD and the [11-20] off-cut direction might also play a role in determining the minimum energy for SF formation.

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