Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit

Nobuyuki Ikarashi; Takeshi Ikezawa; Kazuya Uejima; Toshinori Fukai; Makoto Miyamura; Akio Toda; Masami Hane

doi:10.1063/1.2937246

Electron holography analysis of a shallow junction for planar-bulk metal-oxide-semiconductor field-effect transistors approaching the scaling limit

Journal of Applied Physics ◽

10.1063/1.2937246 ◽

2008 ◽

Vol 103 (11) ◽

pp. 114514 ◽

Cited By ~ 10

Author(s):

Nobuyuki Ikarashi ◽

Takeshi Ikezawa ◽

Kazuya Uejima ◽

Toshinori Fukai ◽

Makoto Miyamura ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Scaling Limit ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Holography ◽

Bulk Metal ◽

Shallow Junction

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Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.1852731 ◽

2005 ◽

Vol 86 (3) ◽

pp. 032104 ◽

Cited By ~ 2

Author(s):

Shahram Ghanad Tavakoli ◽

Sungkweon Baek ◽

Hyo Sik Chang ◽

Dae Won Moon ◽

Hyunsang Hwang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Solid Phase ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Ion Implanted

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Fabrication of 30 nm gate length electrically variable shallow-junction metal–oxide–semiconductor field-effect transistors using a calixarene resist

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.589732 ◽

1997 ◽

Vol 15 (6) ◽

pp. 2806 ◽

Cited By ~ 6

Author(s):

T. Sakamoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Gate Length ◽

Shallow Junction

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Statistical Analysis of Subthreshold Swing in Fully Depleted Silicon-on-Thin-Buried-Oxide and Bulk Metal–Oxide–Semiconductor Field Effect Transistors

Japanese Journal of Applied Physics ◽

10.7567/jjap.52.04cc02 ◽

2013 ◽

Vol 52 (4S) ◽

pp. 04CC02 ◽

Cited By ~ 5

Author(s):

Tomoko Mizutani ◽

Yoshiki Yamamoto ◽

Hideki Makiyama ◽

Toshiaki Iwamatsu ◽

Hidekazu Oda ◽

...

Keyword(s):

Statistical Analysis ◽

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Bulk Metal ◽

Fully Depleted ◽

Buried Oxide

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Modeling of Body Factor and Subthreshold Swing in Bulk Metal Oxide Semiconductor Field Effect Transistors in Short-Channel Regime

Japanese Journal of Applied Physics ◽

10.1143/jjap.45.6173 ◽

2006 ◽

Vol 45 (8A) ◽

pp. 6173-6176 ◽

Cited By ~ 1

Author(s):

Arifin Tamsir Putra ◽

Masumi Saitoh ◽

Gen Tsutsui ◽

Toshiro Hiramoto

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Subthreshold Swing ◽

Oxide Semiconductor ◽

Short Channel ◽

Bulk Metal

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Comparison of oxide breakdown progression in ultra-thin oxide silicon-on-insulator and bulk metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.1776640 ◽

2004 ◽

Vol 96 (6) ◽

pp. 3473-3477

Author(s):

M. C. Chen ◽

S. H. Ku ◽

C. T. Chan ◽

Tahui Wang

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Bulk Metal ◽

Oxide Breakdown ◽

Thin Oxide

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Electron Holography Characterization of Ultra Shallow Junctions in 30-nm-Gate-Length Metal–Oxide–Semiconductor Field-Effect Transistors

Japanese Journal of Applied Physics ◽

10.1143/jjap.47.2365 ◽

2008 ◽

Vol 47 (4) ◽

pp. 2365-2368 ◽

Cited By ~ 8

Author(s):

Nobuyuki Ikarashi ◽

Makiko Oshida ◽

Makoto Miyamura ◽

Motofumi Saitoh ◽

Akira Mineji ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Holography ◽

Gate Length ◽

Shallow Junctions ◽

Ultra Shallow Junctions

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Fabrication of 12 nm electrically variable shallow junction metal–oxide–semiconductor field effect transistors on silicon on insulator substrates

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1621670 ◽

2003 ◽

Vol 21 (6) ◽

pp. 2975 ◽

Cited By ~ 5

Author(s):

W. Henschel ◽

T. Wahlbrink ◽

Y. M. Georgiev ◽

M. Lemme ◽

T. Mollenhauer ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Shallow Junction

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Off-axis Electron Holography for 2D Dopant Profiling in p- and n-Metal Oxide Semiconductor Field Effect Transistors (MOSFETs)

Microscopy and Microanalysis ◽

10.1017/s1431927603022347 ◽

2003 ◽

Vol 9 (S03) ◽

pp. 240-241 ◽

Cited By ~ 2

Author(s):

K. Vogel ◽

A. Lenk ◽

H. Lichte ◽

H.-J. Engelmann ◽

U. Mühle ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Electron Holography ◽

Dopant Profiling

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Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors

Applied Physics Letters ◽

10.1063/1.126789 ◽

2000 ◽

Vol 76 (25) ◽

pp. 3810-3812 ◽

Cited By ~ 62

Author(s):

Hisao Kawaura ◽

Toshitsugu Sakamoto ◽

Toshio Baba

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Tunneling Current ◽

Metal Oxide Semiconductor ◽

Oxide Semiconductor ◽

Shallow Junction ◽

Direct Tunneling ◽

Direct Tunneling Current

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Investigation of piezoresistive effect in p-channel metal–oxide–semiconductor field-effect transistors fabricated on circular silicon-on-insulator diaphragms using cost-effective minimal-fab process

Japanese Journal of Applied Physics ◽

10.7567/jjap.57.06hd03 ◽

2018 ◽

Vol 57 (6S1) ◽

pp. 06HD03 ◽

Cited By ~ 3

Author(s):

Yongxun Liu ◽

Hiroyuki Tanaka ◽

Norio Umeyama ◽

Kazuhiro Koga ◽

Sommawan Khumpuang ◽

...

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Cost Effective ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Piezoresistive Effect

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