Electronic structure and optical gain of wurtzite ZnO nanowires

2008 ◽  
Vol 92 (18) ◽  
pp. 181101 ◽  
Author(s):  
Xiu-Wen Zhang ◽  
Jingbo Li ◽  
Shu-Shen Li ◽  
Jian-Bai Xia
Keyword(s):  
Electronic Structure ◽  
Optical Gain ◽  
Zno Nanowires

scholarly journals Electronic Structure and Optical Gain of InNBiAs/InP Pyramidal Quantum Dots

2017 ◽  
Vol 215 ◽  
pp. 31-35
Author(s):  
Zhigang Song ◽  
Sumanta Bose ◽  
W.J. Fan ◽  
X.H. Tang ◽  
D.H. Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain

Electronic structure and optical gain of InAsSbN/InAs quantum dots

2010 ◽  
Vol 49 (1) ◽  
pp. S10-S14 ◽  
Author(s):  
J. Chen ◽  
W.J. Fan ◽  
Q. Xu ◽  
X.W. Zhang
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain ◽  
Inas Quantum Dots

scholarly journals Electronic structure and optical gain saturation of InAs1−xNx/GaAs quantum dots

2009 ◽  
Vol 105 (12) ◽  
pp. 123705 ◽  
Author(s):  
J. Chen ◽  
W. J. Fan ◽  
Q. Xu ◽  
X. W. Zhang ◽  
S. S. Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain ◽  
Gain Saturation

scholarly journals Electronic Structure and Luminescence Properties of Er Doped ZnO Nanowires

2006 ◽  
Vol 12 (S02) ◽  
pp. 748-749 ◽  
Author(s):  
J Wang ◽  
SK Hark ◽  
Q Li
Keyword(s):  
Electronic Structure ◽  
Zno Nanowires ◽  
Luminescence Properties ◽  
Doped Zno ◽  
Er Doped

Extended abstract of a paper presented at Microscopy and Microanalysis 2006 in Chicago, Illinois, USA, July 30 – August 3, 2006

scholarly journals Electronic Structure and Magnetism of Mn-Doped ZnO Nanowires

Nanomaterials ◽  
2015 ◽  
Vol 5 (2) ◽  
pp. 885-894 ◽  
Author(s):  
Fuchun Zhang ◽  
Dandan Chao ◽  
Hongwei Cui ◽  
Weihu Zhang ◽  
Weibin Zhang
Keyword(s):  
Electronic Structure ◽  
Zno Nanowires ◽  
Doped Zno ◽  
Mn Doped

First-Principles Calculations on the Electronic Structure of ZnO Nanowires

2012 ◽  
Vol 198-199 ◽  
pp. 23-27
Author(s):  
Nan Zhang ◽  
Hong Sheng Zhao ◽  
Dong Yang ◽  
Wen Jie Yan
Keyword(s):  
Electronic Structure ◽  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
First Principles ◽  
Density Functional ◽  
Valence Band Maximum ◽  
Zno Nanowires ◽  
Cross Sectional ◽  
Quantum Size

Based upon the density functional theory (DFT) in this paper, the first-principles approach is used to study the electronic structure of different cross-sectional diameters of ZnO [0001] nanowires of wurtzite structure. The results show that ZnO [0001] nanowires have a wide direct band gap. Located in the G-point of the Brillouin zone the conduction band minimum and valence band maximum are relatively smooth. The conduction band is mainly composed of Zn 4s and Zn 4p states, and the valence band is composed of Zn 3d and O 2p states. The effective mass of conduction band electrons and valence band holes are large while their mobility is very low which show that conductive ability of pure defect-free [0001] ZnO nanowires is weak. Along with the increase of the cross-sectional diameters, the band gap gradually decreases that indicates quantum size effects are obvious in the nano size range.

Interfacial Electronic Structure in Graded Shell Nanocrystals Dictates Their Performance for Optical Gain

2016 ◽  
Vol 120 (34) ◽  
pp. 19409-19415 ◽  
Author(s):  
Brenna R. Walsh ◽  
Jonathan I. Saari ◽  
Michael M. Krause ◽  
Timothy G. Mack ◽  
Robert Nick ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Optical Gain ◽  
Interfacial Electronic Structure

Role of cross section on the stability and electronic structure of Ag-doped ZnO nanowires

2012 ◽  
Vol 14 (3) ◽  
Author(s):  
Yanlu Li ◽  
Xian Zhao ◽  
Weiliu Fan ◽  
Honggang Sun ◽  
Xiufeng Cheng
Keyword(s):  
Electronic Structure ◽  
Cross Section ◽  
Zno Nanowires ◽  
Doped Zno ◽  
The Stability
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