scholarly journals Electronic structure and optical gain saturation of InAs1−xNx/GaAs quantum dots

2009 ◽  
Vol 105 (12) ◽  
pp. 123705 ◽  
Author(s):  
J. Chen ◽  
W. J. Fan ◽  
Q. Xu ◽  
X. W. Zhang ◽  
S. S. Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain ◽  
Gain Saturation

scholarly journals Electronic Structure and Optical Gain of InNBiAs/InP Pyramidal Quantum Dots

2017 ◽  
Vol 215 ◽  
pp. 31-35
Author(s):  
Zhigang Song ◽  
Sumanta Bose ◽  
W.J. Fan ◽  
X.H. Tang ◽  
D.H. Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain

Electronic structure and optical gain of InAsSbN/InAs quantum dots

2010 ◽  
Vol 49 (1) ◽  
pp. S10-S14 ◽  
Author(s):  
J. Chen ◽  
W.J. Fan ◽  
Q. Xu ◽  
X.W. Zhang
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain ◽  
Inas Quantum Dots

Electronic structure and optical gain of truncated InAs1−xNx /GaAs quantum dots

2009 ◽  
Vol 46 (3) ◽  
pp. 498-506 ◽  
Author(s):  
J. Chen ◽  
W.J. Fan ◽  
Q. Xu ◽  
X.W. Zhang ◽  
S.S. Li ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain

Electronic structure and optical gain of InAsPN/GaP(N) quantum dots

2011 ◽  
Vol 49 (1) ◽  
pp. 1-8 ◽  
Author(s):  
J. Chen ◽  
W.J. Fan ◽  
Q. Xu ◽  
X.W. Zhang
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain

Single-charge transport through hybrid core–shell Au-ZnS quantum dots: a comprehensive analysis from a modified energy structure

Nanoscale ◽  
2021 ◽  
Author(s):  
Tuhin Shuvra Basu ◽  
Simon Diesch ◽  
Ryoma Hayakawa ◽  
Yutaka Wakayama ◽  
Elke Scheer
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Carrier Transport ◽  
Comprehensive Analysis ◽  
Energy Structure ◽  
Core Shell ◽  
Single Charge ◽  
Scanning Tunnelling Microscope ◽  
Single Carrier ◽  
Scanning Tunnelling

We examined the modified electronic structure and single-carrier transport of individual hybrid core–shell metal–semiconductor Au-ZnS quantum dots using a scanning tunnelling microscope.

scholarly journals Achieving Optical Gain of the CsPbBr3 Perovskite Quantum Dots and Influence of the Variable Stripe Length Method

ACS Omega ◽  
2021 ◽  
Author(s):  
Saif M. H. Qaid ◽  
Hamid M. Ghaithan ◽  
Bandar Ali Al-Asbahi ◽  
Abdullah S. Aldwayyan
Keyword(s):  
Quantum Dots ◽  
Optical Gain ◽  
Perovskite Quantum Dots ◽  
Stripe Length

Theoretical and experimental investigation of electronic structure and relaxation of colloidal nanocrystalline indium phosphide quantum dots

2003 ◽  
Vol 67 (7) ◽  
Author(s):  
Randy J. Ellingson ◽  
Jeff L. Blackburn ◽  
Jovan Nedeljkovic ◽  
Garry Rumbles ◽  
Marcus Jones ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Experimental Investigation ◽  
Electronic Structure ◽  
Indium Phosphide

State-resolved manipulations of optical gain in semiconductor quantum dots: Size universality, gain tailoring, and surface effects

2009 ◽  
Vol 131 (16) ◽  
pp. 164706 ◽  
Author(s):  
Ryan R. Cooney ◽  
Samuel L. Sewall ◽  
D. M. Sagar ◽  
Patanjali Kambhampati
Keyword(s):  
Quantum Dots ◽  
Optical Gain ◽  
Surface Effects ◽  
Semiconductor Quantum Dots

SPACE-CHARGE SPECTROSCOPY OF ELECTRONIC STATES IN Ge/Si QUANTUM DOTS WITH TYPE-II BAND ALIGNMENT

2007 ◽  
Vol 06 (05) ◽  
pp. 353-356
Author(s):  
A. I. YAKIMOV ◽  
A. V. DVURECHENSKII ◽  
A. I. NIKIFOROV ◽  
A. A. BLOSHKIN
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Binding Energy ◽  
Space Charge ◽  
Tensile Strain ◽  
Electronic States ◽  
Band Alignment ◽  
Type Ii ◽  
Electron Confinement ◽  
Si Quantum Dots

Space-charge spectroscopy was employed to study electronic structure in a stack of four layers of Ge quantum dots coherently embedded in an n-type Si (001) matrix. Evidence for an electron confinement in the vicinity of Ge dots was found. From the frequency-dependent measurements the electron binding energy was determined to be ~50 meV, which is consistent with the results of numerical analysis. The data are explained by a modification of the conduction band alignment induced by inhomogeneous tensile strain in Si around the buried Ge dots.

Electronic structure and optical gain of wurtzite ZnO nanowires

2008 ◽  
Vol 92 (18) ◽  
pp. 181101 ◽  
Author(s):  
Xiu-Wen Zhang ◽  
Jingbo Li ◽  
Shu-Shen Li ◽  
Jian-Bai Xia
Keyword(s):  
Electronic Structure ◽  
Optical Gain ◽  
Zno Nanowires
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