Interfacial Electronic Structure in Graded Shell Nanocrystals Dictates Their Performance for Optical Gain

2016 ◽  
Vol 120 (34) ◽  
pp. 19409-19415 ◽  
Author(s):  
Brenna R. Walsh ◽  
Jonathan I. Saari ◽  
Michael M. Krause ◽  
Timothy G. Mack ◽  
Robert Nick ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Optical Gain ◽  
Interfacial Electronic Structure

Electronic structure and optical gain of wurtzite ZnO nanowires

2008 ◽  
Vol 92 (18) ◽  
pp. 181101 ◽  
Author(s):  
Xiu-Wen Zhang ◽  
Jingbo Li ◽  
Shu-Shen Li ◽  
Jian-Bai Xia
Keyword(s):  
Electronic Structure ◽  
Optical Gain ◽  
Zno Nanowires

scholarly journals Interfacial electronic structure at rubrene/NiFe heterostructure

2021 ◽  
pp. 104692
Author(s):  
Pan Yuan ◽  
Yuquan Liu ◽  
Haipeng Xie ◽  
Junhua Wei ◽  
Yuan Zhao ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Interfacial Electronic Structure

scholarly journals A Study of Interfacial Electronic Structure at the CuPc/CsPbI2Br Interface

Crystals ◽  
2021 ◽  
Vol 11 (5) ◽  
pp. 547
Author(s):  
Zengguang Tang ◽  
Liujiang Zhang ◽  
Zhenhuang Su ◽  
Zhen Wang ◽  
Li Chen ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Molecular Orbital ◽  
Photoelectron Spectroscopy ◽  
High Performance ◽  
Energy Gap ◽  
Hole Transport ◽  
Hole Injection ◽  
Band Bending ◽  
Valance Band Maximum ◽  
Interfacial Electronic Structure

In this article, CsPbI2Br perovskite thin films were spin-coated on FTO, on which CuPc was deposited by thermal evaporation. The electronic structure at the CsPbI2Br/CuPc interface was examined during the CuPc deposition by in situ X-ray photoelectron spectroscopy (XPS) and ultraviolet photoelectron spectroscopy (UPS) measurements. No downward band bending was resolved at the CsPbI2Br side, whereas there is ~0.23 eV upward band bending as well as a dipole of ~0.08 eV identified at the molecular side. Although the hole injection barrier as indicated by the energy gap from CsPbI2Br valance band maximum (VBM) to CuPc highest occupied molecular orbital (HOMO) was estimated to be ~0.26 eV, favoring hole extraction from CsPbI2Br to CuPc, the electron blocking barrier of ~0.04 eV as indicated by the offset between CsPbI2Br conduction band minimum (CBM) and CuPc lowest unoccupied molecular orbital (LUMO) is too small to efficiently block electron transfer. Therefore, the present experimental study implies that CuPc may not be a promising hole transport material for high-performance solar cells using CsPbI2Br as active layer.

Interfacial Electronic Structure of the Dipolar Vanadyl Naphthalocyanine on Au(111): “Push-Back” vs Dipolar Effects

2011 ◽  
Vol 115 (43) ◽  
pp. 21128-21138 ◽  
Author(s):  
Aleksandrs Terentjevs ◽  
Mary P. Steele ◽  
Michael L. Blumenfeld ◽  
Nahid Ilyas ◽  
Leah L. Kelly ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Interfacial Electronic Structure

Interfacial electronic structure of copper phthalocyanine and copper hexadecafluorophthalocyanine studied by photoemission

2006 ◽  
Vol 88 (17) ◽  
pp. 173513 ◽  
Author(s):  
K. M. Lau ◽  
J. X. Tang ◽  
H. Y. Sun ◽  
C. S. Lee ◽  
S. T. Lee ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Copper Phthalocyanine ◽  
Interfacial Electronic Structure

scholarly journals Electronic Structure and Optical Gain of InNBiAs/InP Pyramidal Quantum Dots

2017 ◽  
Vol 215 ◽  
pp. 31-35
Author(s):  
Zhigang Song ◽  
Sumanta Bose ◽  
W.J. Fan ◽  
X.H. Tang ◽  
D.H. Zhang ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Electronic Structure ◽  
Optical Gain

Interfacial Electronic Structure Modulation of NiTe Nanoarrays with NiS Nanodots Facilitates Electrocatalytic Oxygen Evolution

2019 ◽  
Vol 31 (21) ◽  
pp. 1900430 ◽  
Author(s):  
Ziqian Xue ◽  
Xia Li ◽  
Qinglin Liu ◽  
Mengke Cai ◽  
Kang Liu ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Oxygen Evolution ◽  
Interfacial Electronic Structure ◽  
Structure Modulation
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