scholarly journals Orientation dependence of electronic structure and optical gain of (11N)-oriented III-V-N quantum wells

2013 ◽  
Vol 113 (8) ◽  
pp. 083102 ◽  
Author(s):  
W. J. Fan
2003 ◽  
Vol 150 (1) ◽  
pp. 25 ◽  
Author(s):  
X. Marie ◽  
J. Barrau ◽  
T. Amand ◽  
H. Carrère ◽  
A. Arnoult ◽  
...  

2008 ◽  
Vol 92 (18) ◽  
pp. 181101 ◽  
Author(s):  
Xiu-Wen Zhang ◽  
Jingbo Li ◽  
Shu-Shen Li ◽  
Jian-Bai Xia

1998 ◽  
Vol 533 ◽  
Author(s):  
Gregory Sun ◽  
Lionel Friedman ◽  
Richard A. Soref

AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.


1996 ◽  
Vol 80 (12) ◽  
pp. 6855-6860 ◽  
Author(s):  
J. Dalfors ◽  
T. Lundström ◽  
P. O. Holtz ◽  
H. H. Radamson ◽  
B. Monemar ◽  
...  

1998 ◽  
Vol 184-185 ◽  
pp. 623-626
Author(s):  
F.P. Logue ◽  
P. Rees ◽  
C. Jordan ◽  
J.F. Donegan ◽  
J. Hegarty ◽  
...  
Keyword(s):  

2001 ◽  
Vol 79 (19) ◽  
pp. 3038-3040 ◽  
Author(s):  
Chang Kyu Kim ◽  
Yong Hee Lee

1993 ◽  
Vol 47 (8) ◽  
pp. 4790-4793 ◽  
Author(s):  
Mao-long Ke ◽  
B. Hamilton

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