Electrostatic force microscopy study about the hole trap in thin nitride/oxide/semiconductor structure

2008 ◽  
Vol 92 (13) ◽  
pp. 132901 ◽  
Author(s):  
Jong-Hun Kim ◽  
Hyunho Noh ◽  
Z. G. Khim ◽  
Kwang Sun Jeon ◽  
Young June Park ◽  
...  
Keyword(s):  
Electrostatic Force ◽  
Microscopy Study ◽  
Semiconductor Structure ◽  
Oxide Semiconductor ◽  
Electrostatic Force Microscopy ◽  
Hole Trap ◽  
Force Microscopy ◽  
Nitride Oxide

Lateral redistribution of trapped charges in nitride/oxide/Si (NOS) investigated by electrostatic force microscopy

Nanoscale ◽  
2011 ◽  
Vol 3 (6) ◽  
pp. 2560 ◽  
Author(s):  
Seung Jae Baik ◽  
Koeng Su Lim ◽  
Wonsup Choi ◽  
Hyunjun Yoo ◽  
Jang-Sik Lee ◽  
...  
Keyword(s):  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy ◽  
Nitride Oxide

Fast and non-invasive conductivity determination by the dielectric response of reduced graphene oxide: an electrostatic force microscopy study

Nanoscale ◽  
2012 ◽  
Vol 4 (22) ◽  
pp. 7231 ◽  
Author(s):  
Cristina Gómez-Navarro ◽  
Francisco J. Guzmán-Vázquez ◽  
Julio Gómez-Herrero ◽  
Juan J. Saenz ◽  
G. M. Sacha
Keyword(s):  
Graphene Oxide ◽  
Reduced Graphene Oxide ◽  
Dielectric Response ◽  
Electrostatic Force ◽  
Microscopy Study ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy ◽  
Non Invasive ◽  
Reduced Graphene

DISSIPATION OF CHARGES IN SILICON NANOCRYSTALS EMBEDDED IN SiO2 DIELECTRIC FILMS: AN ELECTROSTATIC FORCE MICROSCOPY STUDY

2005 ◽  
Vol 04 (04) ◽  
pp. 709-715
Author(s):  
C. Y. NG ◽  
H. W. LAU ◽  
T. P. CHEN ◽  
O. K. TAN ◽  
V. S. W. LIM
Keyword(s):  
Silicon Nanocrystals ◽  
Electrostatic Force ◽  
Microscopy Study ◽  
Dielectric Films ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy ◽  
Charge Cloud ◽  
Lower Charge ◽  
Charge Decay ◽  
Charge Change

In this paper, we report a mapping of charge transport in silicon nanocrystals ( nc - Si ) embedded in SiO 2 dielectric films with electrostatic force microscopy (EFM). By using contact EFM mode, positive and negative charges can be deposited on nc - Si . We found that the charge diffusion from the charged nc - Si to the surrounding neighboring uncharged nc - Si is the dominant mechanism during charge decay. A longer decay time was observed for a wider area of stored charge (i.e. 3 charged spots) due to the diffusion of charges being blocked by the surrounding charged nc - Si . This result is consistent with the increase of charge cloud size during the charge decay and the lower charge change percentage for 3 charged spots.

Electrostatic force microscopy study of electrical conductivity of hydrogen-terminated CVD diamond films

2007 ◽  
Vol 204 (9) ◽  
pp. 2915-2919
Author(s):  
A. Volodin ◽  
C. Toma ◽  
G. Bogdan ◽  
W. Deferme ◽  
K. Haenen ◽  
...  
Keyword(s):  
Electrical Conductivity ◽  
Electrostatic Force ◽  
Diamond Films ◽  
Cvd Diamond ◽  
Microscopy Study ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy
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