Effect of metal–insulator–semiconductor structure derived space charge field on the tip vibration signal in electrostatic force microscopy

2000 ◽  
Vol 18 (6) ◽  
pp. 2688 ◽  
Author(s):  
Seungbum Hong ◽  
Jungwon Woo ◽  
Hyunjung Shin ◽  
Eunah Kim ◽  
Keun-Ho Kim ◽  
...  
Keyword(s):  
Space Charge ◽  
Electrostatic Force ◽  
Vibration Signal ◽  
Semiconductor Structure ◽  
Electrostatic Force Microscopy ◽  
Space Charge Field ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Force Microscopy ◽  
Charge Field

Electrostatic force microscopy study about the hole trap in thin nitride/oxide/semiconductor structure

2008 ◽  
Vol 92 (13) ◽  
pp. 132901 ◽  
Author(s):  
Jong-Hun Kim ◽  
Hyunho Noh ◽  
Z. G. Khim ◽  
Kwang Sun Jeon ◽  
Young June Park ◽  
...  
Keyword(s):  
Electrostatic Force ◽  
Microscopy Study ◽  
Semiconductor Structure ◽  
Oxide Semiconductor ◽  
Electrostatic Force Microscopy ◽  
Hole Trap ◽  
Force Microscopy ◽  
Nitride Oxide

Co-planar two-dimensional Metal-Insulator-Semiconductor Capacitor: Numerical study of the device electrostatics.

2017 ◽  
Author(s):  
Varun Bheemireddy
Keyword(s):  
Space Charge ◽  
High Performance ◽  
Numerical Study ◽  
2D Materials ◽  
Space Charge Density ◽  
Two Dimensional ◽  
Short Channel ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
New Family

The two-dimensional(2D) materials are highly promising candidates to realise elegant and e cient transistor. In the present letter, we conjecture a novel co-planar metal-insulator-semiconductor(MIS) device(capacitor) completely based on lateral 2D materials architecture and perform numerical study of the capacitor with a particular emphasis on its di erences with the conventional 3D MIS electrostatics. The space-charge density features a long charge-tail extending into the bulk of the semiconductor as opposed to the rapid decay in 3D capacitor. Equivalently, total space-charge and semiconductor capacitance densities are atleast an order of magnitude more in 2D semiconductor. In contrast to the bulk capacitor, expansion of maximum depletion width in 2D semiconductor is observed with increasing doping concentration due to lower electrostatic screening. The heuristic approach of performance analysis(2D vs 3D) for digital-logic transistor suggest higher ON-OFF current ratio in the long-channel limit even without third dimension and considerable room to maximise the performance of short-channel transistor. The present results could potentially trigger the exploration of new family of co-planar at transistors that could play a signi significant role in the future low-power and/or high performance electronics.<br>

scholarly journals Review of time-resolved non-contact electrostatic force microscopy techniques with applications to ionic transport measurements

2019 ◽  
Vol 10 ◽  
pp. 617-633 ◽  
Author(s):  
Aaron Mascaro ◽  
Yoichi Miyahara ◽  
Tyler Enright ◽  
Omur E Dagdeviren ◽  
Peter Grütter
Keyword(s):  
Atomic Force Microscopy ◽  
Electrostatic Force ◽  
Oscillation Period ◽  
Electrostatic Force Microscopy ◽  
Time Varying ◽  
Time Resolved ◽  
Battery Materials ◽  
Force Microscopy ◽  
Atomic Force ◽  
Microscopy Techniques

Recently, there have been a number of variations of electrostatic force microscopy (EFM) that allow for the measurement of time-varying forces arising from phenomena such as ion transport in battery materials or charge separation in photovoltaic systems. These forces reveal information about dynamic processes happening over nanometer length scales due to the nanometer-sized probe tips used in atomic force microscopy. Here, we review in detail several time-resolved EFM techniques based on non-contact atomic force microscopy, elaborating on their specific limitations and challenges. We also introduce a new experimental technique that can resolve time-varying signals well below the oscillation period of the cantilever and compare and contrast it with those previously established.

scholarly journals Broadband nanodielectric spectroscopy by means of amplitude modulation electrostatic force microscopy (AM-EFM)

2011 ◽  
Vol 111 (8) ◽  
pp. 1366-1369 ◽  
Author(s):  
G.A. Schwartz ◽  
C. Riedel ◽  
R. Arinero ◽  
Ph. Tordjeman ◽  
A. Alegría ◽  
...  
Keyword(s):  
Amplitude Modulation ◽  
Electrostatic Force ◽  
Electrostatic Force Microscopy ◽  
Force Microscopy

Capacitance-voltage measurements on a p-type InSb metal/insulator/semiconductor structure with Si3N4 as the insulator

1989 ◽  
Vol 168 (2) ◽  
pp. 157-163 ◽  
Author(s):  
B. Ullrich ◽  
F. Kuchar ◽  
R. Meisels ◽  
F. Olcaytug ◽  
A. Jachimowicz
Keyword(s):  
Semiconductor Structure ◽  
Metal Insulator ◽  
Metal Insulator Semiconductor ◽  
Capacitance Voltage ◽  
P Type

Microstructure and Local Charge Distribution in Hydrogenated Nanocrystalline Silicon under Illumination Studied by Electrostatic Force Microscopy.

2013 ◽  
Vol 1493 ◽  
pp. 201-206
Author(s):  
Rubana Bahar Priti ◽  
Venkat Bommisetty
Keyword(s):  
Grain Boundaries ◽  
Charge Distribution ◽  
Bias Voltage ◽  
Electrostatic Force ◽  
Nanocrystalline Silicon ◽  
Electrostatic Force Microscopy ◽  
Strained Si ◽  
Force Microscopy ◽  
Local Charge ◽  
Before And After

ABSTRACTHydrogenated nanocrystalline silicon (nc-Si:H) is a promising absorber material for photovoltaic applications. Nanoscale electrical conductivity and overall electronic quality of this material are significantly affected by film microstructure, specifically the density and dimension of grains and grain-boundaries (GB). Local charge distribution at grains and grain/GB interfaces of nc-Si:H was studied by Electrostatic Force Microscopy (EFM) in constant force mode under illumination of white LED. Bias voltage from -3V to +3V was applied on the tip. Scanning Kelvin Force (KFM) images were taken before and after illumination to study the change in surface photovoltage (SP). EFM and KFM analysis were combined with film topography to draw a correlation between surface morphology and nanoscale charge distribution in this material. After illumination, small blister like structures were observed whose size and density increase with time. Raman spectroscopy confirmed these new structures as nanocrystalline silicon. This change was assumed due to relaxation of strained Si-Si bonds as an effect of photo response. Nanocrystalline grain interiors were at lower potential and amorphous grain boundaries were at higher potential for negative bias; it was opposite for positive bias. Change in polarity in bias voltage reversed the polarity of the potential in grains and GBs indicating the dominance of negative type of defects. Further study with current sensing AFM in dark and illumination with variable bias voltages will be able to identify the type and density of defects in grains and grain/GB interfaces.

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