Control of quantum-confined Stark effect in InGaN∕GaN multiple quantum well active region by p-type layer for III-nitride-based visible light emitting diodes
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2019 ◽
pp. 1005-1012
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2012 ◽
Vol 24
(11)
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pp. 909-911
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1994 ◽
Vol 138
(1-4)
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pp. 703-708
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