High‐temperature operation of strained Si0.65Ge0.35/Si(111)p‐type multiple‐quantum‐well light‐emitting diode grown by solid source Si molecular‐beam epitaxy

1993 ◽  
Vol 63 (7) ◽  
pp. 967-969 ◽  
Author(s):  
S. Fukatsu ◽  
N. Usami ◽  
Y. Shiraki ◽  
A. Nishida ◽  
K. Nakagawa
Keyword(s):  
High Temperature ◽  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
P Type ◽  
High Temperature Operation

Resonant-cavity InGaN multiple-quantum-well green light-emitting diode grown by molecular-beam epitaxy

2002 ◽  
Vol 80 (12) ◽  
pp. 2198-2200 ◽  
Author(s):  
F. B. Naranjo ◽  
S. Fernández ◽  
M. A. Sánchez-Garcı́a ◽  
F. Calle ◽  
E. Calleja
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diode ◽  
Resonant Cavity ◽  
Multiple Quantum Well ◽  
Green Light ◽  
Multiple Quantum ◽  
Light Emitting

MBE-Grown CdZnO/ZnO Multiple Quantum-Well Light-Emitting Diode on MOCVD-Grown p-Type GaN

2012 ◽  
Vol 24 (11) ◽  
pp. 909-911 ◽  
Author(s):  
Shao-Ying Ting ◽  
Horng-Shyang Chen ◽  
Wen-Ming Chang ◽  
Jeng-Jie Huang ◽  
Che-Hao Liao ◽  
...  
Keyword(s):  
Quantum Well ◽  
Light Emitting Diode ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting ◽  
P Type

GaInN/GaN multiple-quantum-well light-emitting diodes grown by molecular beam epitaxy

1999 ◽  
Vol 74 (24) ◽  
pp. 3616-3618 ◽  
Author(s):  
N. Grandjean ◽  
J. Massies ◽  
S. Dalmasso ◽  
P. Vennéguès ◽  
L. Siozade ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

Electroluminescence of In0.53Ga0.47As/GaAs0.5Sb0.5Type-II Multiple Quantum Well Light-Emitting Diodes Grown on (111)B InP by Molecular Beam Epitaxy

2002 ◽  
Vol 41 (Part 1, No. 7A) ◽  
pp. 4515-4516 ◽  
Author(s):  
Yuichi Kawamura ◽  
Toshiyuki Higashino ◽  
Masato Fujimoto ◽  
Masanobu Amano ◽  
Takuji Yokoyama ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Light Emitting

scholarly journals UV electroluminescence emissions from high-quality ZnO/ZnMgO multiple quantum well active layer light-emitting diodes

RSC Advances ◽  
2021 ◽  
Vol 11 (62) ◽  
pp. 38949-38955
Author(s):  
Shanshan Chen ◽  
Tengrun Zhan ◽  
Xinhua Pan ◽  
Haiping He ◽  
Jingyun Huang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Quantum Well ◽  
Active Layer ◽  
Molecular Beam ◽  
Light Emitting Diodes ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
High Quality ◽  
Light Emitting ◽  
Uv Emission

ZnO/ZnMgO MQWs was employed as an active layer to fabricate p-GaN/MQWs/n-ZnO diode by molecular beam epitaxy. It showed sharp and efficient UV emission around 370 nm due to constraint of carriers in high-quality MQWs well layer.

scholarly journals High-Temperature Electroluminescence of InGaN/GaN Light-Emitting Devices with Multiple Quantum Barriers

2012 ◽  
Vol 2012 ◽  
pp. 1-7
Author(s):  
Ya-Fen Wu
Keyword(s):  
High Temperature ◽  
Quantum Well ◽  
External Quantum Efficiency ◽  
Multiple Quantum Well ◽  
Current Level ◽  
Multiple Quantum ◽  
Carrier Localization ◽  
Light Emitting ◽  
Light Emitting Devices ◽  
High Temperature Operation

We investigate the high-temperature characteristics of InGaN/GaN multiple quantum well light-emitting devices with and without multiple quantum barriers (MQBs) in depth. The electroluminescence measurements were carried out over a temperature range from 200 to 380 K and an injection current level from 1 to 100 mA. Enhanced carrier confinement and stronger carrier localization in the active layer are achieved for the sample with MQBs. Furthermore, it is found that the external quantum efficiency of the sample possessing MQBs is higher than that of the sample with GaN barriers. The MQB structure improves the high-temperature operation of light-emitting devices.

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