scholarly journals Characterization of homoepitaxial p-type ZnO grown by molecular beam epitaxy

2002 ◽  
Vol 81 (10) ◽  
pp. 1830-1832 ◽  
Author(s):  
D. C. Look ◽  
D. C. Reynolds ◽  
C. W. Litton ◽  
R. L. Jones ◽  
D. B. Eason ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
P Type

Non‐contact electrical characterization of low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy

1991 ◽  
Vol 59 (15) ◽  
pp. 1896-1898 ◽  
Author(s):  
R. M. Park ◽  
M. B. Troffer ◽  
E. Yablonovitch ◽  
T. J. Gmitter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Low Resistivity ◽  
P Type

Characterization of GaN p-n Junction Grown on Si (111) Substrate by Plasma-Assisted Molecular Beam Epitaxy

2011 ◽  
Vol 364 ◽  
pp. 139-143
Author(s):  
Radzali Rosfariza ◽  
Anas Ahmad Mohd ◽  
Hassan Zainuriah ◽  
Norzaini Zainal ◽  
Fong Kwong Yam ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Band Edge Emission ◽  
X Ray Diffraction ◽  
Sem Image ◽  
Raman Measurement ◽  
P Type ◽  
Sharp Interfaces

In this report, the growth of GaN p-n junction on Si (111) substrate by plasma-assisted molecular beam epitaxy (PAMBE) is demonstrated. Doping of the GaN p-n junction has been carried out using Si and Mg as n-type and p-type dopants, respectively. Silicon substrate is used to grow the GaNpn-junction. In order to improve the crystalline quality of the nitride based junction, AlN is used as a buffer layer. The optical properties of the sample have been characterized by photoluminescence (PL) and Raman spectroscopy.PL spectrum shows a strong band edge emission of GaN at ~364nm, indicating good quality of the sample.The presence of peak ~657cm-1in Raman measurement has exhibited asuccessful doping of Mg in the sample. The structural properties are measured by high-resolution x-ray diffraction (HR-XRD) and scanning electron microscopy (SEM). The cross section of the SEM image of the sample has shown sharp interfaces.

Electrical characterization of hole traps in p-type ZnSe and ZnSSe grown by molecular beam epitaxy

1998 ◽  
Vol 72 (23) ◽  
pp. 3026-3028 ◽  
Author(s):  
D. Seghier ◽  
I. S. Hauksson ◽  
H. P. Gislason ◽  
G. D. Brownlie ◽  
K. A. Prior ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
P Type

Characterization of majority and minority carrier deep levels in p-type GaN:Mg grown by molecular beam epitaxy using deep level optical spectroscopy

2008 ◽  
Vol 103 (6) ◽  
pp. 063722 ◽  
Author(s):  
A. Armstrong ◽  
J. Caudill ◽  
A. Corrion ◽  
C. Poblenz ◽  
U. K. Mishra ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Optical Spectroscopy ◽  
Molecular Beam ◽  
Minority Carrier ◽  
Deep Level ◽  
Deep Levels ◽  
P Type

Characterization of Tin Oxide Grown by Molecular Beam Epitaxy

2014 ◽  
Vol 1633 ◽  
pp. 13-18
Author(s):  
G. Medina ◽  
P.A. Stampe ◽  
R.J. Kennedy ◽  
R.J. Reeves ◽  
G.T. Dang ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Substrate Temperature ◽  
Tin Oxide ◽  
Molecular Beam ◽  
Growth Conditions ◽  
Electrical Measurements ◽  
Device Structure ◽  
Metal Semiconductor Metal ◽  
P Type

ABSTRACTWe describe the characteristics of a series of thin film tin oxide films grown by plasma-assisted molecular beam epitaxy on r-plane sapphire substrates over a range of flux and substrate temperature conditions. A mixture of both SnO2 and SnO are detected in several films, with the amount depending on growth conditions, most particularly the substrate temperature. Electrical measurements were not possible on all samples due to roughness related issues with contacting, but at least one film exhibited p-type characteristics depending on measurement conditions, and one sample exhibited significant persistent photoconductivity upon ultraviolet excitation in a metal-semiconductor-metal device structure.

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

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