Non‐contact electrical characterization of low‐resistivity p‐type ZnSe:N grown by molecular beam epitaxy

1991 ◽  
Vol 59 (15) ◽  
pp. 1896-1898 ◽  
Author(s):  
R. M. Park ◽  
M. B. Troffer ◽  
E. Yablonovitch ◽  
T. J. Gmitter
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Low Resistivity ◽  
P Type

Electrical characterization of hole traps in p-type ZnSe and ZnSSe grown by molecular beam epitaxy

1998 ◽  
Vol 72 (23) ◽  
pp. 3026-3028 ◽  
Author(s):  
D. Seghier ◽  
I. S. Hauksson ◽  
H. P. Gislason ◽  
G. D. Brownlie ◽  
K. A. Prior ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
P Type

Electrical Characterization of Low Temperature GaAs Layers, and Observation of the Extremely Large Carrier Concentrations in Undoped Material

1991 ◽  
Vol 241 ◽  
Author(s):  
Bijan Tadayon ◽  
Mohammad Fatemi ◽  
Saied Tadayon ◽  
F. Moore ◽  
Harry Dietrich
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Substrate Temperature ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Physical Characteristics ◽  
Hall Measurements ◽  
Undoped Material ◽  
Low Temperature Gaas

ABSTRACTWe present here the results of a study on the effect of substrate temperature, Ts, on the electrical and physical characteristics of low temperature (LT) molecular beam epitaxy GaAs layers. Hall measurements have been performed on the asgrown samples and on samples annealed at 610 °C and 850 °C. Si implantation into these layers has also been investigated.

Low-resistivity p-type ZnSe, ZnSSe and MgZnSSe grown by gas-source molecular beam epitaxy

1996 ◽  
Vol 159 (1-4) ◽  
pp. 257-260 ◽  
Author(s):  
M. Imaizumi ◽  
H. Kuroki ◽  
Y. Endoh ◽  
M. Suita ◽  
K. Ohtsuka ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Low Resistivity ◽  
Gas Source ◽  
P Type

Electrical characterization of ensemble of GaN nanowires grown by the molecular beam epitaxy technique

2013 ◽  
Vol 103 (9) ◽  
pp. 092103 ◽  
Author(s):  
Vl. Kolkovsky ◽  
Z. R. Zytkiewicz ◽  
M. Sobanska ◽  
K. Klosek
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization ◽  
Gan Nanowires

Electrical characterization of gallium planar‐doped ZnSe grown by molecular‐beam epitaxy

1989 ◽  
Vol 66 (9) ◽  
pp. 4295-4300 ◽  
Author(s):  
S. M. Shibli ◽  
M. C. Tamargo ◽  
J. L. De Miguel ◽  
B. J. Skromme ◽  
R. E. Nahory ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Electrical Characterization
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