Electrical and deep-level characterization of GaP1−xNx grown by gas-source molecular beam epitaxy

2007 ◽  
Vol 101 (10) ◽  
pp. 103707 ◽  
Author(s):  
M. Kaneko ◽  
T. Hashizume ◽  
V. A. Odnoblyudov ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Deep Level ◽  
Gas Source

scholarly journals Gas‐source molecular‐beam epitaxy using Si2H6and GeH4and x‐ray characterization of Si1−xGex(0≤x≤0.33) alloys

1992 ◽  
Vol 71 (10) ◽  
pp. 4916-4919 ◽  
Author(s):  
S. H. Li ◽  
S. W. Chung ◽  
J. K. Rhee ◽  
P. K. Bhattacharya
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
X Ray ◽  
Gas Source

Characterization of strain relaxation in As ion implanted Si1−xGex epilayers grown by gas source molecular beam epitaxy

1998 ◽  
Vol 72 (7) ◽  
pp. 845-847 ◽  
Author(s):  
Lyu-fan Zou ◽  
Z. G. Wang ◽  
D. Z. Sun ◽  
T. W. Fan ◽  
X. F. Liu ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Strain Relaxation ◽  
Gas Source ◽  
Ion Implanted

Infra-red characterization of carbonization of Si surfaces by gas source molecular beam epitaxy

1997 ◽  
Vol 6 (12) ◽  
pp. 1772-1776 ◽  
Author(s):  
M.B. el Mekki ◽  
J. Pascual ◽  
M. Androulidaki ◽  
K. Zekentes ◽  
J. Camassel ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Infra Red

Growth and characterization of Si/SiGe microstructures on patterned Si substrates using gas source molecular beam epitaxy

1995 ◽  
Vol 150 ◽  
pp. 950-954 ◽  
Author(s):  
J. Zhang ◽  
X.M. Zhang ◽  
A. Matsumura ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Si Substrates ◽  
Gas Source

Growth and characterization of Si1−xGex/Si multilayers on patterned Si(001) substrates using gas source molecular beam epitaxy

1994 ◽  
Vol 12 (4) ◽  
pp. 1139-1141 ◽  
Author(s):  
J. Zhang ◽  
A. Marinopoulou ◽  
J. Hartung ◽  
E. C. Lightowlers ◽  
N. Anwar ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Growth and Characterization of BRS GaInAsp-GaAs Laser Emitting At 0.8μm by Gas-Source Molecular Beam Epitaxy

1995 ◽  
Vol 417 ◽  
Author(s):  
C. Jelen ◽  
S. Slivken ◽  
J. Diaz ◽  
M. Erdtmann ◽  
S. Kim ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Vapor Deposition ◽  
Metalorganic Chemical Vapor Deposition ◽  
Molecular Beam ◽  
Laser System ◽  
Chemical Vapor ◽  
Ridge Structure ◽  
Gas Source ◽  
Gaas Laser

AbstractGaInAsP-GaAs buried ridge structure lasers emitting at 0.8μm have been fabricated on material grown in two steps by low pressure metalorganic chemical vapor deposition and gas-source molecular beam epitaxy. Preliminary laser results are reported, and the feasibility of using gas-source molecular beam epitaxy for the regrowth of sophisticated laser system is demonstrated.

Scanning photoluminescence characterization of iron-doped gas source molecular beam epitaxy indium phosphide layers

1993 ◽  
Vol 20 (1-2) ◽  
pp. 82-87 ◽  
Author(s):  
H. L'Haridon ◽  
A. Le Corre ◽  
S. Salaün ◽  
D. Lecrosnier ◽  
A. Passaret ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Indium Phosphide ◽  
Molecular Beam ◽  
Gas Source ◽  
Iron Doped
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