Line length dependence of threshold current density and driving force in eutectic SnPb and SnAgCu solder electromigration

2008 ◽  
Vol 103 (7) ◽  
pp. 073701 ◽  
Author(s):  
Min-Seung Yoon ◽  
Min-Ku Ko ◽  
Bit-Na Kim ◽  
Byung-Joon Kim ◽  
Yong-Bae Park ◽  
...  
Keyword(s):  
Current Density ◽  
Driving Force ◽  
Threshold Current ◽  
Line Length ◽  
Threshold Current Density ◽  
Snagcu Solder ◽  
Length Dependence ◽  
Eutectic Snpb

Evaluation of Threshold Current Density of Electromigration Damage in Angled Bamboo Lines

2007 ◽  
Author(s):  
Kazuhiko Sasagawa ◽  
Shota Fukushi
Keyword(s):  
Integrated Circuits ◽  
Current Density ◽  
Evaluation Method ◽  
Threshold Current ◽  
Line Length ◽  
Threshold Current Density ◽  
Metal Line ◽  
Governing Parameter ◽  
Scale Down ◽  
Dimensional Shape

As silicon integrated circuits (ICs) continue to scale down, several reliability issues have emerged. Electromigration — the transportation of metallic atoms by the electron wind — has been recognized as one of the key damage mechanisms in metallic interconnects. It is known that there is the threshold current density of the electromigration damage in the via-connected line. The evaluation of the threshold current density is one of the great interests from the viewpoint of IC reliability. In this study, metal lines with two-dimensional shape, i.e. angled metal lines are treated. The evaluation method of the threshold current density is applied to the metal line. The method is based on the numerical simulation of the building-up process of the atomic density distribution in the bamboo line by using the governing parameter for electromigration damage. Comparing the evaluated results of the angled line with that of straight-shaped line, the effects of corner position and line length on threshold current density of electromigration damage are discussed.

Threshold current density of electromigration in eutectic SnPb solder

2005 ◽  
Vol 86 (20) ◽  
pp. 203504 ◽  
Author(s):  
Y. T. Yeh ◽  
C. K. Chou ◽  
Y. C. Hsu ◽  
Chih Chen ◽  
K. N. Tu
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Snpb Solder ◽  
Eutectic Snpb

Low Threshold Current Density (100) GaInAsP/InP Double-Heterostructure Lasers for Wavelength 1.3 µm

1979 ◽  
Vol 18 (9) ◽  
pp. 1795-1805 ◽  
Author(s):  
Yoshio Itaya ◽  
Yasuharu Suematsu ◽  
Shinya Katayama ◽  
Katsumi Kishino ◽  
Shigehisa Arai
Keyword(s):  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Double Heterostructure ◽  
Low Threshold
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