Low threshold current density 1.3 [micro sign]m InAs∕InGaAs quantum dot lasers with InGaP cladding layers grown by gas-source molecular-beam epitaxy
2005 ◽
Vol 44
(4B)
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pp. 2520-2522
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Keyword(s):
Keyword(s):
2005 ◽
Vol 44
(No. 35)
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pp. L1103-L1104
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Keyword(s):
Keyword(s):
2005 ◽
Vol 278
(1-4)
◽
pp. 734-738
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