scholarly journals Surface proximity and boron concentration effects on end-of-range defect formation during nonmelt laser annealing

2008 ◽  
Vol 92 (8) ◽  
pp. 082109 ◽  
Author(s):  
J. A. Sharp ◽  
A. J. Smith ◽  
R. P. Webb ◽  
K. J. Kirkby ◽  
N. E. B. Cowern ◽  
...  
Keyword(s):  
Laser Annealing ◽  
Boron Concentration ◽  
Defect Formation ◽  
Concentration Effects ◽  
Surface Proximity

Beic Investigation of Defects Induced in Cw Beam-Annealed Si

1980 ◽  
Vol 1 ◽  
Author(s):  
N.H. Sheng ◽  
M. Mizuta ◽  
J.L. Merz
Keyword(s):  
Electron Beam ◽  
Laser Annealing ◽  
Defect Formation

ABSTRACTEBIC has been used to investigate the beam-induced damage in As+ -implanted Si subjected to scanned laser or electronbeam annealing. Comparison is made between these annealing techniques; in general, electron-beam annealing is found to give superior results. In addition, several different experiments combining these techniques are described. Samples were pre-annealed prior to laser annealing, using either thermal or electron-beam annealing. Other samples were given a thermal post-anneal after laser-annealing. The effect of these treatments on defect formation is discussed.

Defect Formation in CW CO2 Laser Annealed Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
H. Baumgart ◽  
F. Phillipp ◽  
H. J. Leamy
Keyword(s):  
Laser Annealing ◽  
Carrier Lifetime ◽  
Defect Formation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Dislocation Loops ◽  
X Ray ◽  
Sem Study ◽  
Recombination Centers ◽  
Cw Co2 Laser

ABSTRACTThe EBIC mode of the SEM has been used to investigate the perfection of cw CO2 laser annealed Si. Even in material that contains no slip lines, non-uniform charge collection is found. A combined X-ray and electron microscopy (TEM, SEM) study identified the residual defects responsible for the EBIC contrast as interstitial submicron dislocation loops. Scanning cw laser annealing independent of the wavelength (10.6μm or 0.514μm) always introduces residual defects which act as recombination centers and reduce minority carrier lifetime.

Laser-Solid Interactions: Localization of Momentum and of Energy

1983 ◽  
Vol 23 ◽  
Author(s):  
J. A. Van Vechten
Keyword(s):  
Laser Annealing ◽  
Auger Recombination ◽  
Defect Formation ◽  
Bose Condensation ◽  
Bragg Scattering ◽  
Pulsed Laser Annealing ◽  
Rapid Annealing ◽  
Condensation Model ◽  
Multiple Holes ◽  
Laser Solid Interactions

ABSTRACTMechanisms are discussed by which sufficient momentum and energy may be localized on individual atoms, ions or molecules to account for photoablation in different regimes. In order of increasing excitation intensity, these include the roles of: “recoilless emission” (as in Bragg scattering and the Mössbauer effect) during Auger recombination of a core exciton, particularly in the Knotek-Feibelman effect; the metastable binding of multiple holes earlier proposed by Feibelman, particularly in the data of Itoh and coworkers; the change in the equilibrium interatomic spacing concomitant with excitation of a Frenkel exciton (localized broken bond), particularly in the ablative photodecomposition reported by Srinivasan and co-workers; the interaction of virtual excitons with real excitons in a strongly polarized solid, e.g. one subject to laser annealing pulses; and the interaction of ions with surface plasmons, particularly in the laser sputtering data of Hanabusa et al. A connection is made to rapid annealing and to sub-threshold defect formation. Further support is noted for the bose condensation model of pulsed laser annealing.

Xenon ion irradiation of superconducting YBa2Cu3O7 thin films

1990 ◽  
Vol 48 (4) ◽  
pp. 92-93
Author(s):  
H. Watanabe ◽  
B. Kabius ◽  
B. Roas ◽  
K. Urban
Keyword(s):  
Defect Formation ◽  
Ion Irradiation ◽  
High Resolution Electron Microscopy ◽  
Structural Disorder ◽  
Flux Lines ◽  
Pinning Effect ◽  
Magnetic Flux Lines ◽  
Resolution Electron ◽  
Radiation Induced ◽  
Induced Defects

Recently it was reported that the critical current density(Jc) of YBa2Cu2O7, in the presence of magnetic field, is enhanced by ion irradiation. The enhancement is thought to be due to the pinning of the magnetic flux lines by radiation-induced defects or by structural disorder. The aim of the present study was to understand the fundamental mechanisms of the defect formation in association with the pinning effect in YBa2Cu3O7 by means of high-resolution electron microscopy(HRTEM).The YBa2Cu3O7 specimens were prepared by laser ablation in an insitu process. During deposition, a substrate temperature and oxygen atmosphere were kept at about 1073 K and 0.4 mbar, respectively. In this way high quality epitaxially films can be obtained with the caxis parallel to the <100 > SrTiO3 substrate normal. The specimens were irradiated at a temperature of 77 K with 173 MeV Xe ions up to a dose of 3.0 × 1016 m−2.

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