Defect Formation in CW CO2 Laser Annealed Silicon

1981 ◽  
Vol 4 ◽  
Author(s):  
H. Baumgart ◽  
F. Phillipp ◽  
H. J. Leamy
Keyword(s):  
Laser Annealing ◽  
Carrier Lifetime ◽  
Defect Formation ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Dislocation Loops ◽  
X Ray ◽  
Sem Study ◽  
Recombination Centers ◽  
Cw Co2 Laser

ABSTRACTThe EBIC mode of the SEM has been used to investigate the perfection of cw CO2 laser annealed Si. Even in material that contains no slip lines, non-uniform charge collection is found. A combined X-ray and electron microscopy (TEM, SEM) study identified the residual defects responsible for the EBIC contrast as interstitial submicron dislocation loops. Scanning cw laser annealing independent of the wavelength (10.6μm or 0.514μm) always introduces residual defects which act as recombination centers and reduce minority carrier lifetime.

Two Carrier Sensitization as a Spectroscopic Tool for a-Si:H

1999 ◽  
Vol 557 ◽  
Author(s):  
L.F. Fonseca ◽  
S.Z. Weisz ◽  
R. Rapaport ◽  
I. Balberg
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Thermal Quenching ◽  
Minority Carrier Lifetime ◽  
Dangling Bond ◽  
Recent Letter ◽  
Recombination Centers ◽  
Spectroscopic Tool ◽  
Hydrogenated Amorphous ◽  
Effect Of Light

AbstractIn a recent letter we have reported the first observation of the phenomenon of minority carrier-lifetime sensitization in hydrogenated amorphous silicon (a-Si:H). We find now that combining the study of this phenomenon with the study of the well-known phenomenon of majority carrier lifetime sensitization, in this material, can provide direct information on its density of states (DOS) distribution. This finding is important in view of the limitations associated with other methods designed for the same purpose. We have carried out then an experimental study of the effect of light soaking on the phototransport in a-Si:H. We found that the increase of the dangling bond concentration with light soaking affects the sensitization and thermal quenching of the majority carriers lifetime. Using computer simulations, we further show that the details of the observations associated with the sensitization effect yield semiquantitative information on the concentration and character of the recombination centers in a-Si:H.

Contactless Evaluation Of The Stress In X-Ray Mask Wafers (SiN/Si) Using A Laser/Microwave Method.

1993 ◽  
Vol 306 ◽  
Author(s):  
Masatoshi Oda ◽  
Akira Usami ◽  
Takahisa Nakai ◽  
Akira Ito ◽  
Masaya Ichimura ◽  
...  
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Microwave Method ◽  
Carrier Injection ◽  
X Ray ◽  
Semiconductor Laser Diode ◽  
Membrane Fabrication ◽  
Microwave System ◽  
Si Wafer

AbstractHighly accurate X-ray masks are strongly required to establish SR lithography technology. X-ray masks must be produced as accurately as the LSI devices, because a one-toone projection aligner system is used. To minimize the in-plane mask distortion, it is desirable to estimate the value of the stress and the non-uniformity in the membrane fabrication (SiN) process. The values of the stress were estimated from the measurement of the warpage and the calculation. It is very difficult to obtain the stress distribution in the SiN/Si wafer. Thus, we measured the minority carrier lifetime distribution using the non-contact laser/microwave method. The carrier injection was done by a 774nm or 904nm semiconductor laser diode, and their beam was focused to about 500 μmφ. The surface lifetime, τ s, of the SiN/Si wafer with the stress over ˜ 108dyn/cm2 decreased to 60–70% of that of the bare Si wafer. Thus, the contactless laser/microwave system can be adaptable for the characterization in the X-ray mask process.

(Invited) Study of Minority Carrier Lifetime Killer by Synchrotron X-Ray Topography

2016 ◽  
Vol 75 (12) ◽  
pp. 215-231
Author(s):  
O. Y. Goue ◽  
J. Guo ◽  
Y. Yang ◽  
B. Raghothamachar ◽  
M. Dudley
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
X Ray

Annealing Effects in Low- and High-Stress Silicon Ribbon

1985 ◽  
Vol 59 ◽  
Author(s):  
K. A. Dumas ◽  
A. Briglio ◽  
L. J. Cheng
Keyword(s):  
Carrier Lifetime ◽  
Minority Carrier ◽  
High Stress ◽  
Minority Carrier Lifetime ◽  
Lifetime Measurements ◽  
X Ray ◽  
Silicon Ribbon ◽  
Structural And Electrical Properties ◽  
Annealing Effects

ABSTRACTX-ray topography and minority carrier lifetime measurements were used to study the structural and electrical properties in silicon dendritic web ribbon. The effects of annealing on the material quality of high- and lowstressribbon were investigated.

scholarly journals Nickel and gold identification in p-type silicon through TDLS: a modeling study

2021 ◽  
Vol 93 (4) ◽  
pp. 40101
Author(s):  
Sarra Dehili ◽  
Damien Barakel ◽  
Laurent Ottaviani ◽  
Olivier Palais
Keyword(s):  
Cross Section ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Defect Level ◽  
Temperature Dependent ◽  
Lifetime Measurements ◽  
Recombination Centers ◽  
P Type ◽  
Minority Carriers

In Silicon, impurities introduce recombination centers and degrade the minority carrier lifetime. It is therefore important to identify the nature of these impurities through their characteristics: the capture cross section σ and the defect level Et. For this purpose, a study of the bulk lifetime of minority carriers can be carried out. The temperature dependence of the lifetime based on the Shockley-Read-Hall (SRH) statistic and related to recombination through defects is studied. Nickel and gold in p-type Si have been selected for the SRH lifetime modeling. The objective of the analysis is to carry out a study to evaluate gold and nickel identification prior to temperature-dependent lifetime measurements using the microwave phase-shift (μW-PS) technique. The μW-PS is derived from the PCD technique and is sensitive to lower impurity concentrations. It has been shown that both gold and nickel can be unambiguously identified from the calculated TDLS curves.

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