Beic Investigation of Defects Induced in Cw Beam-Annealed Si
ABSTRACTEBIC has been used to investigate the beam-induced damage in As+ -implanted Si subjected to scanned laser or electronbeam annealing. Comparison is made between these annealing techniques; in general, electron-beam annealing is found to give superior results. In addition, several different experiments combining these techniques are described. Samples were pre-annealed prior to laser annealing, using either thermal or electron-beam annealing. Other samples were given a thermal post-anneal after laser-annealing. The effect of these treatments on defect formation is discussed.
Keyword(s):
Keyword(s):
Keyword(s):
2020 ◽
Vol 29
(10)
◽
pp. 6570-6580
Keyword(s):
Keyword(s):
2020 ◽
Vol 51
(5)
◽
pp. 2430-2443
◽