Excimer Laser Annealing of Ion-Implanted Silicon: Dopant Activation, Diffusion and Defect Formation

2007 ◽  
Author(s):  
E.V. Monakhov ◽  
B.G. Svensson ◽  
A. La Magna ◽  
P. Alippi ◽  
M. Italia ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Defect Formation ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Ion Implanted

Characterization of excimer laser annealing of ion implanted Si

1982 ◽  
Vol 3 (10) ◽  
pp. 280-283 ◽  
Author(s):  
R.T. Young ◽  
G.A. van der Leeden ◽  
J. Narayan ◽  
W.H. Christie ◽  
R.F. Wood ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Ion Implanted

Long-pulse duration excimer laser annealing of Al+ ion implanted 4H-SiC for pn junction formation

2003 ◽  
Vol 208-209 ◽  
pp. 292-297 ◽  
Author(s):  
C. Dutto ◽  
E. Fogarassy ◽  
D. Mathiot ◽  
D. Muller ◽  
P. Kern ◽  
...  
Keyword(s):  
Pulse Duration ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Pn Junction ◽  
Junction Formation ◽  
Long Pulse ◽  
Ion Implanted

Study on dopant activation of phosphorous implanted polycrystalline silicon thin films by KrF excimer laser annealing

2002 ◽  
Vol 46 (8) ◽  
pp. 1085-1090 ◽  
Author(s):  
Chang-Ho Tseng ◽  
Ching-Wei Lin ◽  
Teh-Hung Teng ◽  
Ting-Kuo Chang ◽  
Huang-Chung Cheng ◽  
...  
Keyword(s):  
Thin Films ◽  
Excimer Laser ◽  
Polycrystalline Silicon ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Silicon Thin Films ◽  
Krf Excimer Laser

scholarly journals Study of dopant activation in biaxially compressively strained SiGe layers using excimer laser annealing

2013 ◽  
Vol 113 (20) ◽  
pp. 204902 ◽  
Author(s):  
G. V. Luong ◽  
S. Wirths ◽  
S. Stefanov ◽  
B. Holländer ◽  
J. Schubert ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
Strained Sige

Pulsed excimer laser annealing of ion implanted silicon: Characterization and solar cell fabrication

1982 ◽  
Vol 41 (10) ◽  
pp. 938-940 ◽  
Author(s):  
D. H. Lowndes ◽  
J. W. Cleland ◽  
W. H. Christie ◽  
R. E. Eby ◽  
G. E. Jellison ◽  
...  
Keyword(s):  
Solar Cell ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Excimer Laser Annealing ◽  
Solar Cell Fabrication ◽  
Cell Fabrication ◽  
Ion Implanted

Lateral Solid-Phase Recrystallization from the Crystal Seed Selectively Formed by Excimer Laser Annealing in Ge-Ion-Implanted Amorphous Silicon Films

2000 ◽  
Vol 39 (Part 1, No. 9A) ◽  
pp. 5063-5068 ◽  
Author(s):  
Jin-Wook Seo ◽  
Satoru Akiyama ◽  
Yoichiro Aya ◽  
Tomoyuki Nohda ◽  
Hiroki Hamada ◽  
...  
Keyword(s):  
Amorphous Silicon ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Solid Phase ◽  
Silicon Films ◽  
Excimer Laser Annealing ◽  
Phase Recrystallization ◽  
Crystal Seed ◽  
Ion Implanted

Single-Shot Excimer Laser Annealing and In Process Ellipsometry Analysis for Ultra Shallow Junctions

2002 ◽  
Vol 717 ◽  
Author(s):  
T. Noguchi ◽  
G. Kerrien ◽  
T. Sarnet ◽  
D. Débarre ◽  
J. Boulmer ◽  
...  
Keyword(s):  
Excimer Laser ◽  
Spectroscopic Ellipsometry ◽  
Laser Annealing ◽  
Laser Energy ◽  
Process Analysis ◽  
Single Shot ◽  
Excimer Laser Annealing ◽  
Dopant Activation ◽  
The Difference ◽  
Ultra Shallow Junctions

AbstractSingle-shot Excimer Laser Annealing (ELA) was performed onto Si surface that was previously B+ implanted with or without Ge+ pre-amorphization. As a result, p+ type USJ (Ultra-Shallow Junction) has been formed. In process analysis, using Infrared Spectroscopic Ellipsometry (IR-SE) has been performed and compared with conventional 4-point probe method. Also, the corresponding crystallinity for the USJ of Si surface has been studied using Ultraviolet-Visible (UV-Vis) Spectroscopic Ellipsometry. In the case of pre-amorphization by Ge+ implantation, the laser energy density threshold required for melting the surface, and therefore for electrical activation, decreased drastically because of the difference in the thermodynamic properties of the amorphized Si. Estimation of the junction depth shows a shallower junction when using UV-SE, as compared to IR-SE. This can be explained by the fact that, in the UV range, the crystallinity of the top layer is predominant while IR-SE is more sensitive to dopant activation. This efficient single-shot ELA is a candidate for the USJ formation for sub-0.1 νm CMOS transistors. The effective method for investigating the activation state related to the crystallinity by using UV-SE and IR-SE is expected to apply as a non-contact analytical tool for USJ formation.

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