Negative characteristic temperature of long wavelength InAs∕AlGaInAs quantum dot lasers grown on InP substrates

2007 ◽  
Vol 91 (26) ◽  
pp. 261105 ◽  
Author(s):  
I. Alghoraibi ◽  
T. Rohel ◽  
R. Piron ◽  
N. Bertru ◽  
C. Paranthoen ◽  
...  
2000 ◽  
Vol 36 (1) ◽  
pp. 41 ◽  
Author(s):  
Xiaodong Huang ◽  
A. Stintz ◽  
C.P. Hains ◽  
G.T. Liu ◽  
J. Cheng ◽  
...  

2005 ◽  
Vol 891 ◽  
Author(s):  
Chongyang Y. Liu ◽  
Soon Fatt Yoon ◽  
Zhongzhe Z. Sun

ABSTRACTSelf-assembled GaInNAs/GaAsN single layer quantum dot (QD) lasers grown using solid source molecular beam epitaxy have been fabricated and characterized. Temperature-dependent measurements have been carried out on the GaInNAs QD lasers. High-temperature operation up to 65°C was demonstrated from an unbonded GaInNAs QD laser (50 × 1060 μm2), with high characteristic temperature (T0) of 79.4 K in the temperature range of 10-60°C. For comparison, temperature-dependent operation has also been studied on the GaInNAs single quantum well (SQW) lasers. Unlike the relation between the cavity length and T0 in GaInNAs SQW lasers, longer-cavity GaInNAs QD laser (50 × 1700 μm2) showed lower T0 of 65.1 K, which is presumably believed due to the nonuniformity of the GaInNAs QD layer.


2000 ◽  
Vol 11 (4) ◽  
pp. 397-400 ◽  
Author(s):  
V M Ustinov ◽  
A E Zhukov ◽  
A R Kovsh ◽  
S S Mikhrin ◽  
N A Maleev ◽  
...  

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