Ground-state lasing at room temperature in long-wavelength InAs quantum-dot lasers on InP(311)B substrates

2001 ◽  
Vol 78 (3) ◽  
pp. 267-269 ◽  
Author(s):  
Hideaki Saito ◽  
Kenichi Nishi ◽  
Sigeo Sugou
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Long Wavelength ◽  
Inas Quantum Dot

Efficient high-temperature CW lasing operation of oxide-confined long-wavelength InAs quantum dot lasers

2000 ◽  
Vol 36 (1) ◽  
pp. 41 ◽  
Author(s):  
Xiaodong Huang ◽  
A. Stintz ◽  
C.P. Hains ◽  
G.T. Liu ◽  
J. Cheng ◽  
...  
Keyword(s):  
High Temperature ◽  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Long Wavelength ◽  
Inas Quantum Dot

Wavelength Shift of InP-Based InAs Quantum Dot Lasers Above Room Temperature

2007 ◽  
Vol 7 (12) ◽  
pp. 4443-4446 ◽  
Author(s):  
Jin Soo Kim ◽  
Cheul-Ro Lee ◽  
Kyeong Won Seol ◽  
Dae Kon Oh
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Wavelength Shift ◽  
Material System ◽  
Quantum Dot Lasers ◽  
Lasing Wavelength ◽  
Band Filling ◽  
Inas Quantum Dot

For the InAs quantum dot (QD) lasers based on the InAlGaAs-InAlAs-InP material system, the lasing operation was successfully achieved up to 100 °C. The lasing wavelength was linearly increased with a slope of 0.100 nm/K up to 50 °C and then, decreased with (−)0.419 nm/K above 50 °C. The temperature-induced shift in the lasing wavelength can be attributed to both the band-gap shrinkage and the band-filling effect of carriers, which was well agreed with the characteristic temperatures of the InAs QD laser calculated from the temperature dependence of threshold current density.

Room temperature CW operation at the ground state of self-formed quantum dot lasers with multi-stacked dot layer

1996 ◽  
Vol 32 (21) ◽  
pp. 2023 ◽  
Author(s):  
H. Shoji ◽  
Y. Nakata ◽  
K. Mukai ◽  
Y. Sugiyama ◽  
M. Sugawara ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Ground State ◽  
Room Temperature ◽  
Quantum Dot Lasers ◽  
Cw Operation

Long-Wavelength Multilayered InAs Quantum Dot Lasers

2007 ◽  
Vol 46 (2) ◽  
pp. 638-641
Author(s):  
Hitoshi Shimizu ◽  
Shanmugam Saravanan ◽  
Junji Yoshida ◽  
Sayoko Ibe ◽  
Noriyuki Yokouchi
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Long Wavelength ◽  
Inas Quantum Dot

High performance and reliable 1.3 μm InAs quantum dot lasers epitaxially grown on Si

2018 ◽  
Author(s):  
Daehwan Jung ◽  
Robert Herrick ◽  
Justin Norman ◽  
Yating Wan ◽  
Arthur C. Gossard ◽  
...  
Keyword(s):  
Quantum Dot ◽  
High Performance ◽  
Quantum Dot Lasers ◽  
Inas Quantum Dot

High performance InAs quantum dot lasers on silicon substrates by low temperature Pd-GaAs wafer bonding

2015 ◽  
Vol 107 (26) ◽  
pp. 261107 ◽  
Author(s):  
Zihao Wang ◽  
Ruizhe Yao ◽  
Stefan F. Preble ◽  
Chi-Sen Lee ◽  
Luke F. Lester ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Dot ◽  
Wafer Bonding ◽  
High Performance ◽  
Silicon Substrates ◽  
Quantum Dot Lasers ◽  
Gaas Wafer ◽  
Inas Quantum Dot

Band filling in p-doped InAs quantum dot lasers

2011 ◽  
Author(s):  
M. Hutchings ◽  
I. O’Driscoll ◽  
P. M. Smowton ◽  
P. Blood
Keyword(s):  
Quantum Dot ◽  
Quantum Dot Lasers ◽  
Band Filling ◽  
Inas Quantum Dot
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