Rate equation model of the negative characteristic temperature of InAs∕GaAs quantum dot lasers

2007 ◽  
Vol 101 (10) ◽  
pp. 104506 ◽  
Author(s):  
C. Z. Tong ◽  
S. F. Yoon ◽  
C. Y. Liu
2007 ◽  
Vol 91 (26) ◽  
pp. 261105 ◽  
Author(s):  
I. Alghoraibi ◽  
T. Rohel ◽  
R. Piron ◽  
N. Bertru ◽  
C. Paranthoen ◽  
...  

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.


2000 ◽  
Vol 76 (23) ◽  
pp. 3349-3351 ◽  
Author(s):  
Kohki Mukai ◽  
Yoshiaki Nakata ◽  
Koji Otsubo ◽  
Mitsuru Sugawara ◽  
Naoki Yokoyama ◽  
...  

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