scholarly journals Origin of the excitonic recombinations in hexagonal boron nitride by spatially resolved cathodoluminescence spectroscopy

2007 ◽  
Vol 102 (11) ◽  
pp. 116102 ◽  
Author(s):  
P. Jaffrennou ◽  
J. Barjon ◽  
J.-S. Lauret ◽  
B. Attal-Trétout ◽  
F. Ducastelle ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Spatially Resolved ◽  
Cathodoluminescence Spectroscopy

Layer speciation and electronic structure investigation of freestanding hexagonal boron nitride nanosheets

Nanoscale ◽  
2015 ◽  
Vol 7 (5) ◽  
pp. 1718-1724 ◽  
Author(s):  
Jian Wang ◽  
Zhiqiang Wang ◽  
Hyunjin Cho ◽  
Myung Jong Kim ◽  
T. K. Sham ◽  
...  
Keyword(s):  
Electronic Structure ◽  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
Polarization Dependence ◽  
Xanes Spectroscopy ◽  
Structure Investigation ◽  
Boron Nitride Nanosheets ◽  
Spatially Resolved

Layer speciation, spatially-resolved XANES spectroscopy and polarization dependence of single and multilayered hBN nanosheets have been investigated by STXM.

scholarly journals Spatially resolved one-dimensional boundary states in graphene–hexagonal boron nitride planar heterostructures

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Jewook Park ◽  
Jaekwang Lee ◽  
Lei Liu ◽  
Kendal W. Clark ◽  
Corentin Durand ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Hexagonal Boron Nitride ◽  
One Dimensional ◽  
Spatially Resolved ◽  
Boundary States ◽  
Dimensional Boundary

Optical Gap Measurements on Individual Boron Nitride Nanotubes by Electron Energy Loss Spectroscopy

2008 ◽  
Vol 14 (3) ◽  
pp. 274-282 ◽  
Author(s):  
Raul Arenal ◽  
Odile Stéphan ◽  
Mathieu Kociak ◽  
Dario Taverna ◽  
Annick Loiseau ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Energy Loss ◽  
Electron Energy ◽  
Electron Energy Loss Spectroscopy ◽  
Hexagonal Boron Nitride ◽  
Boron Nitride Nanotubes ◽  
Electromagnetic Response ◽  
Optical Gap ◽  
Spatially Resolved ◽  
Electron Energy Loss

AbstractElectromagnetic response of individual boron nitride nanotubes (BNNTs) has been studied by spatially resolved electron energy loss spectroscopy (EELS). We demonstrate how dedicated EELS methods using subnanometer electron probes permit the analysis of local dielectric properties of a material on a nanometer scale. The continuum dielectric model has been used to analyze the low-loss EEL spectra recorded from these tubes. Using this model, we demonstrate the weak influence of the out-of-plane contribution to the dielectric response of BNNTs. The optical gap, which can be deduced from the measurements, is found to be equal to 5.8 ± 0.2 eV, which is close to that of the hexagonal boron nitride. This value is found to be independent of the nanotubes configuration (diameter, helicity, number of walls, and interaction between the different walls).

Cathodoluminescence Spectroscopy of Boron Nitride Films

1994 ◽  
Vol 339 ◽  
Author(s):  
C. A. Taylor ◽  
S. W. Brown ◽  
V. Subramaniam ◽  
S. Kidner ◽  
S. C. Rand ◽  
...  
Keyword(s):  
Boron Nitride ◽  
Deep Level ◽  
Hexagonal Boron Nitride ◽  
Cubic Boron Nitride ◽  
Emission Spectra ◽  
Growth Conditions ◽  
Ion Source ◽  
Substrate Bias Voltage ◽  
Cathodoluminescence Spectroscopy ◽  
Boron Nitride Films

ABSTRACTWe report results from cathodoluminescence spectroscopy of boron nitride films grown on Si (100) substrates by ECR ion source assisted magnetron sputtering of a hexagonal BN target. Three main peaks are observed in the near-bandgap region for hexagonal boron nitride films at energies of 4.90 eV, 5.31 eV, and 5.50 eV. In addition, deep-level emission spectra of predominantly cubic boron nitride films are correlated with sample growth conditions. In particular we show that the emission intensity, position, and linewidth are strongly dependent on the substrate bias voltage used during sample growth.

scholarly journals Nanoscale lattice dynamics in hexagonal boron nitride moiré superlattices

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
S. L. Moore ◽  
C. J. Ciccarino ◽  
D. Halbertal ◽  
L. J. McGilly ◽  
N. R. Finney ◽  
...  
Keyword(s):  
Boron Nitride ◽  
First Principles ◽  
Lattice Dynamics ◽  
Domain Walls ◽  
Hexagonal Boron Nitride ◽  
Twist Angle ◽  
Graphite Substrate ◽  
First Principles Calculations ◽  
Spatially Resolved ◽  
Dependent Interaction

AbstractTwisted two-dimensional van der Waals (vdW) heterostructures have unlocked a new means for manipulating the properties of quantum materials. The resulting mesoscopic moiré superlattices are accessible to a wide variety of scanning probes. To date, spatially-resolved techniques have prioritized electronic structure visualization, with lattice response experiments only in their infancy. Here, we therefore investigate lattice dynamics in twisted layers of hexagonal boron nitride (hBN), formed by a minute twist angle between two hBN monolayers assembled on a graphite substrate. Nano-infrared (nano-IR) spectroscopy reveals systematic variations of the in-plane optical phonon frequencies amongst the triangular domains and domain walls in the hBN moiré superlattices. Our first-principles calculations unveil a local and stacking-dependent interaction with the underlying graphite, prompting symmetry-breaking between the otherwise identical neighboring moiré domains of twisted hBN.

Marcus-Hush Theory Revealed by Electron Tunneling Through Hexagonal Boron Nitride

2019 ◽  
Author(s):  
Matěj Velický ◽  
Sheng Hu ◽  
Colin R. Woods ◽  
Peter S. Toth ◽  
Viktor Zólyomi ◽  
...  
Keyword(s):  
Electron Transfer ◽  
Boron Nitride ◽  
Electron Tunneling ◽  
Hexagonal Boron Nitride ◽  
Large Body ◽  
Liquid Solution ◽  
Limiting Current ◽  
Electron Transfer Rate Constant ◽  
Electrochemical Parameters ◽  
Voltammetric Measurements

Marcus-Hush theory of electron transfer is one of the pillars of modern electrochemistry with a large body of supporting experimental evidence presented to date. However, some predictions, such as the electrochemical behavior at microdisk electrodes, remain unverified. Herein, we present a study of electron tunneling across a hexagonal boron nitride barrier between a graphite electrode and redox levels in a liquid solution. This was achieved by the fabrication of microdisk electrodes with a typical diameter of 5 µm. Analysis of voltammetric measurements, using two common redox mediators, yielded several electrochemical parameters, including the electron transfer rate constant, limiting current, and transfer coefficient. They show a significant departure from the Butler-Volmer behavior in a clear manifestation of the Marcus-Hush theory of electron transfer. In addition, our system provides a novel experimental platform, which could be applied to address a number of scientific problems such as identification of reaction mechanisms, surface modification, or long-range electron transfer.

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