scholarly journals Spatially resolved one-dimensional boundary states in graphene–hexagonal boron nitride planar heterostructures

2014 ◽  
Vol 5 (1) ◽  
Author(s):  
Jewook Park ◽  
Jaekwang Lee ◽  
Lei Liu ◽  
Kendal W. Clark ◽  
Corentin Durand ◽  
...  
Nanoscale ◽  
2015 ◽  
Vol 7 (5) ◽  
pp. 1718-1724 ◽  
Author(s):  
Jian Wang ◽  
Zhiqiang Wang ◽  
Hyunjin Cho ◽  
Myung Jong Kim ◽  
T. K. Sham ◽  
...  

Layer speciation, spatially-resolved XANES spectroscopy and polarization dependence of single and multilayered hBN nanosheets have been investigated by STXM.


2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Gwangwoo Kim ◽  
Kyung Yeol Ma ◽  
Minsu Park ◽  
Minsu Kim ◽  
Jonghyuk Jeon ◽  
...  

Abstract Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. However, to date, the possible emergence of physical properties and functionalities monitored by the interfaces between metallic graphene and insulating h-BN remains largely unexplored. Here, we demonstrate a blue emitting atomic-resolved heterojunction between graphene and h-BN. Such emission is tentatively attributed to localized energy states formed at the disordered boundaries of h-BN and graphene. The weak blue emission at the heterojunctions in simple in-plane heterostructures of h-BN and graphene can be enhanced by increasing the density of the interface in graphene quantum dots array embedded in the h-BN monolayer. This work suggests that the narrowest, atomically resolved heterojunctions of in-plane two-dimensional heterostructures provides a future playground for optoelectronics.


Nanoscale ◽  
2019 ◽  
Vol 11 (28) ◽  
pp. 13366-13376 ◽  
Author(s):  
Zhong-Qiang Liu ◽  
Jichen Dong ◽  
Feng Ding

In the initial stages of chemical vapor deposition on a Cu(111) surface, one-dimensional Bn–1Nn (N-rich environment) or BnNn–1 (B-rich) chains first appear, and they transform to two-dimensional sp2 networks or h-BN islands at a critical size of 13.


Author(s):  
Hiroo Suzuki ◽  
Misaki Kishibuchi ◽  
Kazuma Shimogami ◽  
Mitsuaki Maetani ◽  
Kyohei Nasu ◽  
...  

2020 ◽  
Vol 26 (1) ◽  
pp. 47-54
Author(s):  
刘晨晨 LIU Chen-chen ◽  
何一凡 HE Yi-fan ◽  
蒋青云 JIANG Qing-yun ◽  
尹承平 YIN Cheng-ping

2020 ◽  
Vol 117 (24) ◽  
pp. 243101
Author(s):  
Yuta Seo ◽  
Satoru Masubuchi ◽  
Eisuke Watanabe ◽  
Momoko Onodera ◽  
Rai Moriya ◽  
...  

2007 ◽  
Vol 102 (11) ◽  
pp. 116102 ◽  
Author(s):  
P. Jaffrennou ◽  
J. Barjon ◽  
J.-S. Lauret ◽  
B. Attal-Trétout ◽  
F. Ducastelle ◽  
...  

2008 ◽  
Vol 14 (3) ◽  
pp. 274-282 ◽  
Author(s):  
Raul Arenal ◽  
Odile Stéphan ◽  
Mathieu Kociak ◽  
Dario Taverna ◽  
Annick Loiseau ◽  
...  

AbstractElectromagnetic response of individual boron nitride nanotubes (BNNTs) has been studied by spatially resolved electron energy loss spectroscopy (EELS). We demonstrate how dedicated EELS methods using subnanometer electron probes permit the analysis of local dielectric properties of a material on a nanometer scale. The continuum dielectric model has been used to analyze the low-loss EEL spectra recorded from these tubes. Using this model, we demonstrate the weak influence of the out-of-plane contribution to the dielectric response of BNNTs. The optical gap, which can be deduced from the measurements, is found to be equal to 5.8 ± 0.2 eV, which is close to that of the hexagonal boron nitride. This value is found to be independent of the nanotubes configuration (diameter, helicity, number of walls, and interaction between the different walls).


2019 ◽  
Vol 685 ◽  
pp. 24-33
Author(s):  
Silke Rose ◽  
Peter Nemes-Incze ◽  
Marco Pratzer ◽  
Vasile Caciuc ◽  
Nicolae Atodiresei ◽  
...  

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