Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

2007 ◽  
Vol 91 (20) ◽  
pp. 203510 ◽  
Author(s):  
Carey M. Tanner ◽  
Ya-Chuan Perng ◽  
Christopher Frewin ◽  
Stephen E. Saddow ◽  
Jane P. Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Dielectric Films ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

2006 ◽  
Vol 99 (7) ◽  
pp. 074109 ◽  
Author(s):  
Min Xu ◽  
Cong-Hui Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Si Substrate ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

Comparative Study on Electrical and Microstructural Characteristics of ZrO2 and HfO2 Grown by Atomic Layer Deposition

2005 ◽  
Vol 20 (11) ◽  
pp. 3125-3132 ◽  
Author(s):  
Hyoungsub Kim ◽  
Krishna C. Saraswat ◽  
Paul C. McIntyre
Keyword(s):  
Dielectric Constant ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Dielectric Material ◽  
Atomic Layer ◽  
Film Deposition ◽  
Dielectric Films ◽  
Amorphous Phases ◽  
Layer Deposition ◽  
Current Characteristics

Ultra-thin ZrO2 and HfO2 dielectric films grown by atomic layer deposition (ALD) are quite promising materials for gate dielectric applications in future transistors, and they exhibit significantly different as-grown microstructures: polycrystalline and amorphous phases, respectively. However, under the identical deposition conditions, both metal oxides show surprisingly similar capacitance–voltage (C–V) characteristics as a function of film thickness, implying that the identities and densities of fixed charge and bulk trapping charge are similar. Factors other than the film microstructure, such as concentration of impurities incorporated during the film deposition, are believed predominantly to control important C–V characteristics. Only the dielectric constant appears to depend significantly on the identity of the dielectric material. It is found that the dielectric constant of ALD-HfO2 (∼20) is significantly lower than that of ZrO2 (∼30) due to the differences in microstructure and also atomic density of the film. In terms of the leakage current characteristics, the effective potential barrier heights between Pt and these two dielectric films are identical (∼2.3 eV) within the experimental uncertainty. Implications for the electrode/dielectric interface electronic structure are discussed.

Analysis of 3-Dimensional 4H-SiC MOS Capacitors Grown by Atomic Layer Deposition of Al2O3

2018 ◽  
Vol 924 ◽  
pp. 490-493 ◽  
Author(s):  
Muhammad I. Idris ◽  
Nick G. Wright ◽  
Alton B. Horsfall
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Oxide Semiconductor ◽  
Mos Capacitors ◽  
Mos Capacitor ◽  
3 Dimensional ◽  
Layer Deposition ◽  
Show Evidence ◽  
Flatband Voltage

3-Dimensional 4H-SiC metal-oxide-semiconductor capacitors have been fabricated to determine the effect of the sidewall on the characteristics of 3-Dimentional gate structures. Al2O3 deposited by Atomic Layer Deposition (ALD) was used as the gate dielectric layer on the trench structure. The 3-D MOS capacitors exhibit increasing accumulation capacitance with excellent linearity as the sidewall area increases, indicating that ALD results in a highly conformal dielectric film. The capacitance – voltage characteristics also show evidence of a second flatband voltage, located at a higher bias than that seen for purely planar devices on the same sample. We also observe that the oxide capacitance of planar and 3-D MOS capacitors increases with temperature. Finally, we have found that the 3-D MOS capacitor has a weaker temperature dependence of flatband voltage in comparison to the conventional planar MOS capacitor due to the incorporation of the (1120) plane in the sidewall.

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