scholarly journals Low-temperature atomic layer deposition-grown Al2O3 gate dielectric for GaN/AlGaN/GaN MOS HEMTs: Impact of deposition conditions on interface state density

2017 ◽  
Vol 35 (1) ◽  
pp. 01A107 ◽  
Author(s):  
Milan Ťapajna ◽  
Lukáš Válik ◽  
Filip Gucmann ◽  
Dagmar Gregušová ◽  
Karol Fröhlich ◽  
...  
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric ◽  
Deposition Conditions

scholarly journals Fully Ion Implanted Normally-Off GaN DMOSFETs with ALD-Al2O3 Gate Dielectrics

Materials ◽  
2019 ◽  
Vol 12 (5) ◽  
pp. 689 ◽  
Author(s):  
Michitaka Yoshino ◽  
Yuto Ando ◽  
Manato Deki ◽  
Toru Toyabe ◽  
Kazuo Kuriyama ◽  
...  
Keyword(s):  
Gate Dielectric ◽  
Drain Current ◽  
Atomic Layer ◽  
Surface Concentration ◽  
Interface State ◽  
State Density ◽  
Free Standing ◽  
Al2o3 Gate Dielectric ◽  
P Type ◽  
Ion Implanted

A normally-off GaN double-implanted vertical MOSFET (DMOSFET) with an atomic layer deposition (ALD)-Al2O3 gate dielectric film on a free-standing GaN substrate fabricated by triple ion implantation is presented. The DMOSFET was formed with Si ion implanted source regions in a Mg ion implanted p-type base with N ion implanted termination regions. A maximum drain current of 115 mA/mm, maximum transconductance of 19 mS/mm at a drain voltage of 15 V, and a threshold voltage of 3.6 V were obtained for the fabricated DMOSFET with a gate length of 0.4 μm with an estimated p-type base Mg surface concentration of 5 × 1018 cm−3. The difference between calculated and measured Vths could be due to the activation ratio of ion-implanted Mg as well as Fermi level pinning and the interface state density. On-resistance of 9.3 mΩ·cm2 estimated from the linear region was also attained. Blocking voltage at off-state was 213 V. The fully ion implanted GaN DMOSFET is a promising candidate for future high-voltage and high-power applications.

Spectroscopic and electrical properties of atomic layer deposition Al2O3 gate dielectric on surface pretreated Si substrate

2006 ◽  
Vol 99 (7) ◽  
pp. 074109 ◽  
Author(s):  
Min Xu ◽  
Cong-Hui Xu ◽  
Shi-Jin Ding ◽  
Hong-Liang Lu ◽  
David Wei Zhang ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Si Substrate ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

scholarly journals Low temperature atomic layer deposition of zirconium oxide for inkjet printed transistor applications

RSC Advances ◽  
2019 ◽  
Vol 9 (4) ◽  
pp. 1841-1848 ◽  
Author(s):  
Mohi Uddin Jewel ◽  
MD Shamim Mahmud ◽  
Mahmuda Akter Monne ◽  
Alex Zakhidov ◽  
Maggie Yihong Chen
Keyword(s):  
Low Temperature ◽  
Atomic Layer Deposition ◽  
Zirconium Oxide ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Layer Deposition

We report the growth of zirconium oxide (ZrO2) as a high-k gate dielectric for an inkjet-printed transistor using a low-temperature atomic layer deposition (ALD) from tetrakis(dimethylamido)zirconium (TDMAZr) and water precursors.

Electrical performance of Al2O3 gate dielectric films deposited by atomic layer deposition on 4H-SiC

2007 ◽  
Vol 91 (20) ◽  
pp. 203510 ◽  
Author(s):  
Carey M. Tanner ◽  
Ya-Chuan Perng ◽  
Christopher Frewin ◽  
Stephen E. Saddow ◽  
Jane P. Chang
Keyword(s):  
Atomic Layer Deposition ◽  
Gate Dielectric ◽  
Atomic Layer ◽  
Electrical Performance ◽  
Dielectric Films ◽  
Layer Deposition ◽  
Al2o3 Gate Dielectric

Impact of oxide/4H-SiC interface state density on field-effect mobility of counter-doped n-channel 4H-SiC MOSFETs

2021 ◽  
Author(s):  
Takuma Doi ◽  
Shigehisa Shibayama ◽  
Mitsuo Sakashita ◽  
Noriyuki Taoka ◽  
Mitsuaki Shimizu ◽  
...  
Keyword(s):  
Field Effect ◽  
Metal Layer ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Interface State Density ◽  
Field Effect Mobility ◽  
Free Electron Density ◽  
Layer Deposition ◽  
Rate Of Increase

Abstract We investigated the effect of interface state density on the field-effect mobility (μ FE) of 4H-SiC counter-doped MOSFETs. We fabricated counter-doped MOSFETs with three types of gate oxides i.e., SiO2, Al2O3 formed via atomic layer deposition, and Al2O3 formed via metal layer oxidation (MLO). A maximum μ FE of 80 cm2/Vs was obtained for the MLO-Al2O3 FET, and this value was 60% larger than that of the SiO2 FET. In addition, we evaluated the electron mobility in the neutral channel (μ neutral) and the rate of increase in the free electron density in the neutral channel with respect to the gate voltage (dN neutral/dV G), which are factors determining μ FE. μ neutral depended only on the channel depth, independent of the type of gate oxide. In addition, dN neutral/dV G was significantly low in the SiO2 FET because of carrier trapping at the high density of interface states, whereas this effect was smaller in the Al2O3 FETs.

scholarly journals Atomic Layer Deposition Grown Zinc-Oxide Based MIS-Type Schottky Barrier Diode

2018 ◽  
Author(s):  
Nuriye Kaymak ◽  
Esra Efil ◽  
Elanur Seven ◽  
Adem Tataroğlu ◽  
Sema Bilge Ocak ◽  
...  
Keyword(s):  
Zinc Oxide ◽  
Atomic Layer Deposition ◽  
Schottky Barrier ◽  
Barrier Height ◽  
Thermionic Emission ◽  
Atomic Layer ◽  
Interface State ◽  
State Density ◽  
Layer Deposition ◽  
P Type

We report on the fabrication and electrical characteristics of zinc-oxide (ZnO) based metal-insulator-semiconductor (MIS) type Schottky barrier diodes (SBHs). ZnO thin layer on the p-type silicon substrate was fabricated by atomic layer deposition (ALD). The structure and surface properties of the thin film were characterized by X-ray diffraction (XRD), atomic force microscope (AFM) and secondary ion mass spectrometer (SIMS). The current-voltage (I-V) characteristics of Al/ALD-grown ZnO/p-Si diodes were measured under dark at room temperature. The electrical parameters such as ideality factor (n), series resistance (Rs) and barrier height (ϕb) of the diodes were analyzed using standard thermionic emission (TE) theory, Norde and Cheung method. The barrier height value obtained from I-V and Cheung method was found to be 0.73 eV and 0.76 eV, respectively. The interface state density (Dit) of the diodes was determined from the I-V characteristics. The nonideal behavior of measured parameters suggested the presence of interface states. The obtained results showed that the prepared diode can be used for NIR Schottky photodetector applications.

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