scholarly journals Ge nanocrystals in lanthanide-based Lu2O3 high-k dielectric for nonvolatile memory applications

2007 ◽  
Vol 102 (9) ◽  
pp. 094307 ◽  
Author(s):  
M. Y. Chan ◽  
P. S. Lee ◽  
V. Ho ◽  
H. L. Seng
Keyword(s):  
Nonvolatile Memory ◽  
High K ◽  
High K Dielectric ◽  
Memory Applications ◽  
Ge Nanocrystals

Nanocrystals in High-k Dielectric Stacks for Non-Volatile Memory Applications

2006 ◽  
pp. 156-166
Author(s):  
Marco Fanciulli ◽  
Michele Perego ◽  
C. Bonafos ◽  
A. Mouti ◽  
S. Schamm ◽  
...  
Keyword(s):  
High K ◽  
Non Volatile Memory ◽  
Volatile Memory ◽  
High K Dielectric ◽  
Memory Applications

Nonvolatile Memory Characteristics Induced in High-k Dielectric Thin Films through Electron Irradiation

2011 ◽  
Vol 59 (2(2)) ◽  
pp. 726-729 ◽  
Author(s):  
Chan-Rock Park ◽  
Hong-Kyoung Lee ◽  
Jin-Ha Hwang ◽  
Young-Hwan Hahn ◽  
Byeong-Cheol Lee ◽  
...  
Keyword(s):  
Thin Films ◽  
Electron Irradiation ◽  
Nonvolatile Memory ◽  
Dielectric Thin Films ◽  
High K ◽  
High K Dielectric ◽  
Memory Characteristics

Formation of Ge nanocrystals in HfAlO high-k dielectric and application in memory device

2004 ◽  
Vol 84 (26) ◽  
pp. 5407-5409 ◽  
Author(s):  
Ying Qian Wang ◽  
Jing Hao Chen ◽  
Won Jong Yoo ◽  
Yee-Chia Yeo ◽  
Sun Jung Kim ◽  
...  
Keyword(s):  
Memory Device ◽  
High K ◽  
High K Dielectric ◽  
Ge Nanocrystals

Temperature Effects on Charge Transfer Mechanisms of nc-ITO Embedded ZrHfO High-k Nonvolatile Memory Devices

2011 ◽  
Vol 1337 ◽  
Author(s):  
Chia-Han Yang ◽  
Yue Kuo ◽  
Chen-Han Lin ◽  
Way Kuo
Keyword(s):  
Gate Voltage ◽  
Nonvolatile Memory ◽  
Charge Retention ◽  
Mos Capacitors ◽  
Dielectric Thin Film ◽  
High K ◽  
Nonvolatile Memory Devices ◽  
High K Dielectric ◽  
Voltage Region ◽  
Large Charge

ABSTRACTThe nanocrystalline ITO embedded Zr-doped HfO2 high-k dielectric thin film has been made into MOS capacitors for nonvolatile memory studies. The devices showed large charge storage densities, large memory windows, and long charge retention times. In this paper, authors investigated the temperature effect on the charge transport and reliability of this kind of device in the range of 25°C to 125°C. The memory window increased with the increase of the temperature. The temperature influenced the trap and detrap of not only the deeply-trapped but also the loosely-trapped charges. The device lost its charge retention capability with the increase of the temperature. The Schottky emission relationship fitted the device in the positive gate voltage region. However, the Frenkel-Poole mechanism was suitable in the negative gate voltage region.

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