A very low temperature single crystal germanium growth process on insulating substrate using Ni-induced lateral crystallization for three-dimensional integrated circuits

2007 ◽  
Vol 91 (14) ◽  
pp. 143107 ◽  
Author(s):  
Jin-Hong Park ◽  
Pawan Kapur ◽  
Krishna C. Saraswat ◽  
Hailin Peng
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Single Crystal ◽  
Growth Process ◽  
Three Dimensional ◽  
Lateral Crystallization ◽  
Very Low Temperature

Low Temperature Boron Activation in Amorphous Germanium for Three Dimensional Integrated Circuits (3D-ICs) using Ni-induced Crystallization

2019 ◽  
Vol 16 (10) ◽  
pp. 909-916
Author(s):  
Jin-Hong Park ◽  
Munehiro Tada ◽  
Hyun-Yong Yu ◽  
Duygu Kuzum ◽  
Yeul Na ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Three Dimensional ◽  
Amorphous Germanium ◽  
3D Ics ◽  
Induced Crystallization

High-Density Large-Area-Array Interconnects Formed by Low-Temperature Cu/Sn–Cu Bonding for Three-Dimensional Integrated Circuits

2012 ◽  
Vol 59 (7) ◽  
pp. 1941-1947 ◽  
Author(s):  
M. R. Lueck ◽  
J. D. Reed ◽  
C. W. Gregory ◽  
A. Huffman ◽  
J. M. Lannon ◽  
...  
Keyword(s):  
Low Temperature ◽  
Integrated Circuits ◽  
Three Dimensional ◽  
High Density ◽  
Large Area ◽  
Area Array ◽  
Cu Bonding

scholarly journals Thermal conductivity of single crystal lanthanum cuprates at very low temperature

1991 ◽  
Vol 77 (10) ◽  
pp. 773-776 ◽  
Author(s):  
D.T. Morelli ◽  
G.L. Doll ◽  
J. Heremans ◽  
S.D. Peacor ◽  
C. Uher ◽  
...  
Keyword(s):  
Thermal Conductivity ◽  
Low Temperature ◽  
Single Crystal ◽  
Very Low Temperature
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