Technique Selection for Front End of Line Defect Localization in Bulk Si FA

Presentation slides from the ISTFA 2021 tutorial, “[Technique Selection for Front End of Line Defect Localization in Bulk Semiconductor Failure Analysis].”

Dynamics and its Effects on Saturation Region in Semiconductor Optical Amplifiers

We focus on studying the dynamics of bulk semiconductor optical amplifiers and their effects on the saturation region for short pulse that differ, however there is the same unsaturated gain for both dynamics. Parameters like current injection, fast dynamics present by carrier heating (CH), and spectra hole burning (SHB) are studied for regions that occur a response to certain dynamics. The behavior of the saturation region is found to be responsible for phenomena such as recovery time and chirp for the pulse under study.

Photo-Chlorine Production with Hydrothermally Grown and Vacuum-Annealed Nanocrystalline Rutile

Photo-generated high-energy surface states can help to produce chlorine in aqueous environments. Here, aligned rutile (TiO2) nanocrystal arrays are grown onto fluorine-doped tin oxide (FTO) substrates and activated either by hydrothermal Sr/Ba surface doping and/or by vacuum-annealing. With vacuum-annealing, highly photoactive films are obtained with photocurrents of typically 8 mA cm−2 at 1.0 V vs. SCE in 1 M KCl (LED illumination with λ = 385 nm and approx. 100 mW cm−2). Photoelectrochemical chlorine production is demonstrated at proof-of-concept scale in 4 M NaCl and suggested to be linked mainly to the production of Ti(III) surface species by vacuum-annealing, as detected by post-catalysis XPS, rather than to Sr/Ba doping at the rutile surface. The vacuum-annealing treatment is proposed to beneficially affect (i) bulk semiconductor TiO2 nanocrystal properties and electron harvesting, (ii) surface TiO2 reactivity towards chloride adsorption and oxidation, and (iii) FTO substrate performance.

Exciton control in a room temperature bulk semiconductor with coherent strain pulses

Controlling the excitonic optical properties of room temperature semiconductors using time-dependent perturbations is key to future optoelectronic applications. The optical Stark effect in bulk and low-dimensional materials has recently shown exciton shifts below 20 meV. Here, we demonstrate dynamical tuning of the exciton properties by photoinduced coherent acoustic phonons in the cheap and abundant wide-gap semiconductor anatase titanium dioxide (TiO2) in single crystalline form. The giant coupling between the excitons and the photoinduced strain pulses yields a room temperature exciton shift of 30 to 50 meV and a marked modulation of its oscillator strength. An advanced ab initio treatment of the exciton-phonon interaction fully accounts for these results, and shows that the deformation potential coupling underlies the generation and detection of the giant acoustic phonon modulations.