Two-detector measurement system of pulse photothermal radiometry for the investigation of the thermal properties of thin films

2007 ◽  
Vol 102 (6) ◽  
pp. 064903 ◽  
Author(s):  
J. Martan ◽  
O. Hervé ◽  
V. Lang
2007 ◽  
Vol 1020 ◽  
Author(s):  
S. Budak ◽  
S. Guner ◽  
C. Muntele ◽  
C. C. Smith ◽  
B. Zheng ◽  
...  

AbstractSemiconducting â-Zn4Sb3and ZrNiSn-based half-heusler compound thin films were prepared by co-evaporation for the application of thermoelectric (TE) materials. High-purity solid zinc and antimony were evaporated by electron beam to grow the â-Zn4Sb3thin film while high-purity zirconium powder and nickel tin powders were evaporated by electron beam to grow the ZrNiSn-based half-heusler compound thin film. Rutherford backscattering spectrometry (RBS) was used to analyze the composition of the thin films. The grown thin films were subjected to 5 MeV Si ions bombardments for generation of nanostructures in the films. We measured the thermal conductivity, Seebeck coefficient, and electrical conductivity of these two systems before and after 5 MeV Si ions beam bombardments. The two material systems have been identified as promising TE materials for the application of thermal-to-electrical energy conversion, but the efficiency still limits their applications. The electronic energy deposited due to ionization in the track of MeV ion beam can cause localized crystallization. The nanostructures produced by MeV ion beam can cause significant change in both the electrical and the thermal conductivity of thin films, thereby improving the efficiency. We used the 3ù-method measurement system to measure the cross-plane thermal conductivity ,the Van der Pauw measurement system to measure the cross-plane electrical conductivity, and the Seebeck-coefficient measurement system to measure the cross-plane Seebeck coefficient. The thermoelectric figures of merit of the two material systems were then derived by calculations using the measurement results. The MeV ion-beam bombardment was found to decrease the thermal conductivity of thin films and increase the efficiency of thermal-to-electrical energy conversion.


1990 ◽  
Vol 203 ◽  
Author(s):  
R.P. Tye ◽  
A. Maesono

ABSTRACTMaterials in use or under consideration for many applications in new and emerging technologies are often available only in small quantities and many times in the form of thin films, wafers and sheets. Such size and form limitations present a number of challenges to those wishing to evaluate thermal performance characteristics. This has resulted in a need to develop totally new transient or modify current transient and steady state techniques significantly. Various new or modified techniques to measure thermophysical properties are described. Illustrations of, applications to and results on semiconductors, superconductors, diamonds, polymers, composites and layered structures will be discussed.


2013 ◽  
Vol 556 ◽  
pp. 1-5 ◽  
Author(s):  
Andrzej Kusiak ◽  
Jiri Martan ◽  
Jean-Luc Battaglia ◽  
Rostislav Daniel

Author(s):  
Nam Ihn Cho ◽  
Se Jong Lee ◽  
Yo Seung Song ◽  
Deuk Yong Lee

2019 ◽  
Vol 498 ◽  
pp. 143666 ◽  
Author(s):  
C.I. da Silva-Oliveira ◽  
D. Martinez-Martinez ◽  
F.M. Couto ◽  
L. Cunha ◽  
F. Macedo

2015 ◽  
Vol 106 (22) ◽  
pp. 223106 ◽  
Author(s):  
Masahiro Nomura ◽  
Yuta Kage ◽  
David Müller ◽  
Dominik Moser ◽  
Oliver Paul

Sign in / Sign up

Export Citation Format

Share Document