Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

James S. Swensen; Jonathan Yuen; Dan Gargas; Steven K. Buratto; Alan J. Heeger

doi:10.1063/1.2752582

Light emission from an ambipolar semiconducting polymer field effect transistor: Analysis of the device physics

Journal of Applied Physics ◽

10.1063/1.2752582 ◽

2007 ◽

Vol 102 (1) ◽

pp. 013103 ◽

Cited By ~ 33

Author(s):

James S. Swensen ◽

Jonathan Yuen ◽

Dan Gargas ◽

Steven K. Buratto ◽

Alan J. Heeger

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Light Emission ◽

Device Physics ◽

Semiconducting Polymer ◽

Effect Transistor

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Light emission from an ambipolar semiconducting polymer field-effect transistor

10.1117/12.644204 ◽

2006 ◽

Cited By ~ 1

Author(s):

James S. Swensen ◽

Cesare Soci ◽

Alan J. Heeger

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Light Emission ◽

Semiconducting Polymer ◽

Effect Transistor

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Light emission from an ambipolar semiconducting polymer field-effect transistor

Applied Physics Letters ◽

10.1063/1.2149986 ◽

2005 ◽

Vol 87 (25) ◽

pp. 253511 ◽

Cited By ~ 193

Author(s):

James S. Swensen ◽

Cesare Soci ◽

Alan J. Heeger

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Light Emission ◽

Semiconducting Polymer ◽

Effect Transistor

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Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of Applied Physics ◽

10.1063/1.4805051 ◽

2013 ◽

Vol 113 (19) ◽

pp. 194507 ◽

Cited By ~ 36

Author(s):

Yue Yang ◽

Kain Lu Low ◽

Wei Wang ◽

Pengfei Guo ◽

Lanxiang Wang ◽

...

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Germanium Tin ◽

Effect Transistor

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Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Journal of Applied Physics ◽

10.1063/1.2924413 ◽

2008 ◽

Vol 103 (10) ◽

pp. 104504 ◽

Cited By ~ 119

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Device Physics ◽

Effect Transistor

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Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

10.7567/ssdm.2011.d-4-4 ◽

2011 ◽

Author(s):

K. L. Low ◽

C. Zhan ◽

G. Han ◽

Y. Yang ◽

K.H. Goh ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Device Physics of Germanium-Junctionless Tunnel Field Effect Transistor and an Approach to Optimize Ion/Ioff by Drain Engineering and Work Function Engineering

Journal of Low Power Electronics ◽

10.1166/jolpe.2014.1300 ◽

2014 ◽

Vol 10 (1) ◽

pp. 92-100

Author(s):

Bahniman Ghosh ◽

Punyasloka Bal ◽

Partha Mondal ◽

M. W. Akram

Keyword(s):

Work Function ◽

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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A quantum model for light emission performance of carbon nanotube field effect transistor

Applied Physics Letters ◽

10.1063/1.3681787 ◽

2012 ◽

Vol 100 (5) ◽

pp. 051113 ◽

Cited By ~ 2

Author(s):

M. R. Aziziyan ◽

V. Ahmadi ◽

N. Moghadam

Keyword(s):

Carbon Nanotube ◽

Field Effect ◽

Field Effect Transistor ◽

Light Emission ◽

Quantum Model ◽

Emission Performance ◽

Effect Transistor

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Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied Physics Letters ◽

10.1063/1.2748366 ◽

2007 ◽

Vol 90 (26) ◽

pp. 263507 ◽

Cited By ~ 95

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Film Thickness ◽

Field Effect ◽

Field Effect Transistor ◽

Silicon Film ◽

Device Physics ◽

Double Gate ◽

Thickness Optimization ◽

Effect Transistor ◽

Gate Tunneling

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Device physics and design theory of Si, Ge and Si/sub 1-x/Ge/sub x/ vertical dual carrier field effect transistor integrated circuits on insulator with effective channel length of 5-18nm

2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings ◽

10.1109/icsict.2006.306162 ◽

2006 ◽

Author(s):

Y.Z. Xu ◽

Y.F. Zhao ◽

D. Bai ◽

Y.H. Yang ◽

R. Yang ◽

...

Keyword(s):

Integrated Circuits ◽

Field Effect ◽

Design Theory ◽

Field Effect Transistor ◽

Channel Length ◽

Device Physics ◽

Effect Transistor ◽

Effective Channel

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Visible light emission from GaAs field-effect transistor

Proceedings of the IEEE ◽

10.1109/proc.1977.10727 ◽

1977 ◽

Vol 65 (9) ◽

pp. 1407-1408 ◽

Cited By ~ 3

Author(s):

T. Mimura ◽

H. Suzuki ◽

M. Fukuta

Keyword(s):

Visible Light ◽

Field Effect ◽

Field Effect Transistor ◽

Light Emission ◽

Effect Transistor ◽

Visible Light Emission

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