Light emission from an ambipolar semiconducting polymer field-effect transistor

Author(s):  
James S. Swensen ◽  
Cesare Soci ◽  
Alan J. Heeger
2007 ◽  
Vol 102 (1) ◽  
pp. 013103 ◽  
Author(s):  
James S. Swensen ◽  
Jonathan Yuen ◽  
Dan Gargas ◽  
Steven K. Buratto ◽  
Alan J. Heeger

2005 ◽  
Vol 87 (25) ◽  
pp. 253511 ◽  
Author(s):  
James S. Swensen ◽  
Cesare Soci ◽  
Alan J. Heeger

1998 ◽  
Vol 37 (Part 1, No. 2) ◽  
pp. 455-461 ◽  
Author(s):  
Hajime Sasaki ◽  
Masayuki Abe ◽  
Kazuo Hayashi ◽  
Takashi Fujioka ◽  
Kiyoshi Mizuguchi ◽  
...  

Sensors ◽  
2012 ◽  
Vol 12 (8) ◽  
pp. 11238-11248 ◽  
Author(s):  
Zin-Sig Kim ◽  
Sang Chul Lim ◽  
Seong Hyun Kim ◽  
Yong Suk Yang ◽  
Do-Hoon Hwang

2016 ◽  
Vol 113 (50) ◽  
pp. 14261-14266 ◽  
Author(s):  
Kilho Yu ◽  
Byoungwook Park ◽  
Geunjin Kim ◽  
Chang-Hyun Kim ◽  
Sungjun Park ◽  
...  

Simultaneously achieving high optical transparency and excellent charge mobility in semiconducting polymers has presented a challenge for the application of these materials in future “flexible” and “transparent” electronics (FTEs). Here, by blending only a small amount (∼15 wt %) of a diketopyrrolopyrrole-based semiconducting polymer (DPP2T) into an inert polystyrene (PS) matrix, we introduce a polymer blend system that demonstrates both high field-effect transistor (FET) mobility and excellent optical transparency that approaches 100%. We discover that in a PS matrix, DPP2T forms a web-like, continuously connected nanonetwork that spreads throughout the thin film and provides highly efficient 2D charge pathways through extended intrachain conjugation. The remarkable physical properties achieved using our approach enable us to develop prototype high-performance FTE devices, including colorless all-polymer FET arrays and fully transparent FET-integrated polymer light-emitting diodes.


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