Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Yue Yang; Kain Lu Low; Wei Wang; Pengfei Guo; Lanxiang Wang; Genquan Han; Yee-Chia Yeo

doi:10.1063/1.4805051

Germanium-tin n-channel tunneling field-effect transistor: Device physics and simulation study

Journal of Applied Physics ◽

10.1063/1.4805051 ◽

2013 ◽

Vol 113 (19) ◽

pp. 194507 ◽

Cited By ~ 36

Author(s):

Yue Yang ◽

Kain Lu Low ◽

Wei Wang ◽

Pengfei Guo ◽

Lanxiang Wang ◽

...

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Germanium Tin ◽

Effect Transistor

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Towards direct band-to-band tunneling in P-channel tunneling field effect transistor (TFET): Technology enablement by Germanium-tin (GeSn)

2012 International Electron Devices Meeting ◽

10.1109/iedm.2012.6479053 ◽

2012 ◽

Cited By ~ 28

Author(s):

Yue Yang ◽

Shaojian Su ◽

Pengfei Guo ◽

Wei Wang ◽

Xiao Gong ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Germanium Tin ◽

Band To Band Tunneling ◽

Direct Band ◽

Effect Transistor

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Performance enhancement of an ultra-scaled double-gate graphene nanoribbon tunnel field-effect transistor using channel doping engineering: Quantum simulation study

AEU - International Journal of Electronics and Communications ◽

10.1016/j.aeue.2020.153287 ◽

2020 ◽

Vol 122 ◽

pp. 153287 ◽

Cited By ~ 6

Author(s):

Khalil Tamersit

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Performance Enhancement ◽

Quantum Simulation ◽

Graphene Nanoribbon ◽

Double Gate ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Impact of high-k gate dielectric with different angles of coverage on the electrical characteristics of gate-all-around field effect transistor: A simulation study

Results in Physics ◽

10.1016/j.rinp.2019.102823 ◽

2020 ◽

Vol 16 ◽

pp. 102823 ◽

Cited By ~ 2

Author(s):

Mohammad Karbalaei ◽

Daryoosh Dideban ◽

Hadi Heidari

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gate Dielectric ◽

Electrical Characteristics ◽

High K ◽

Effect Transistor ◽

High K Gate Dielectric

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Double-Gate Graphene Nanoribbon Field-Effect Transistor for DNA and Gas Sensing Applications: Simulation Study and Sensitivity Analysis

IEEE Sensors Journal ◽

10.1109/jsen.2016.2550492 ◽

2016 ◽

Vol 16 (11) ◽

pp. 4180-4191 ◽

Cited By ~ 52

Author(s):

Khalil Tamersit ◽

Faycal Djeffal

Keyword(s):

Sensitivity Analysis ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Gas Sensing ◽

Graphene Nanoribbon ◽

Double Gate ◽

Sensing Applications ◽

Effect Transistor

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Germanium–Tin P-Channel Tunneling Field-Effect Transistor: Device Design and Technology Demonstration

IEEE Transactions on Electron Devices ◽

10.1109/ted.2013.2287031 ◽

2013 ◽

Vol 60 (12) ◽

pp. 4048-4056 ◽

Cited By ~ 45

Author(s):

Yue Yang ◽

Genquan Han ◽

Pengfei Guo ◽

Wei Wang ◽

Xiao Gong ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Design And Technology ◽

Device Design ◽

Germanium Tin ◽

Effect Transistor ◽

Technology Demonstration

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Device physics and design of germanium tunneling field-effect transistor with source and drain engineering for low power and high performance applications

Journal of Applied Physics ◽

10.1063/1.2924413 ◽

2008 ◽

Vol 103 (10) ◽

pp. 104504 ◽

Cited By ~ 119

Author(s):

Eng-Huat Toh ◽

Grace Huiqi Wang ◽

Ganesh Samudra ◽

Yee-Chia Yeo

Keyword(s):

Low Power ◽

Field Effect ◽

High Performance ◽

Field Effect Transistor ◽

Device Physics ◽

Effect Transistor

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Additional-Body Effects in a Self-Aligned Deca-Nanometer Ultrathin-Body and Buried Oxide Silicon-on-Insulator Metal–Oxide–Semiconductor Field-Effect Transistor: A Three-Dimensional Simulation Study

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.110210 ◽

2011 ◽

Vol 50 (11R) ◽

pp. 110210 ◽

Cited By ~ 1

Author(s):

Jyi-Tsong Lin ◽

Yi-Chuen Eng ◽

Cheng-Hsin Chen ◽

Yi-Hsuan Fan

Keyword(s):

Metal Oxide ◽

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Metal Oxide Semiconductor ◽

Silicon On Insulator ◽

Oxide Semiconductor ◽

Effect Transistor ◽

Dimensional Simulation

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A Three-Dimensional Simulation Study of Source/Drain-Tied Double-Gate Fin Field-Effect Transistor Design for 16-nm Half-Pitch Technology Generation and Beyond

Japanese Journal of Applied Physics ◽

10.7567/jjap.50.084301 ◽

2011 ◽

Vol 50 (8R) ◽

pp. 084301

Author(s):

Yi-Chuen Eng ◽

Jyi-Tsong Lin ◽

Tzu-Feng Chang ◽

Chun-Yu Chen ◽

Yi-Hsuan Fan ◽

...

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Three Dimensional ◽

Double Gate ◽

Technology Generation ◽

Effect Transistor ◽

Dimensional Simulation

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Tunnel Field-Effect Transistor with L-shaped Germanium Source: Device Physics and Design

10.7567/ssdm.2011.d-4-4 ◽

2011 ◽

Author(s):

K. L. Low ◽

C. Zhan ◽

G. Han ◽

Y. Yang ◽

K.H. Goh ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Device Physics ◽

Effect Transistor ◽

Tunnel Field Effect Transistor

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Characteristics of Fully Depleted Four-Gate Field Effect Transistor with Localized Interface Charges: A 3-D Simulation Study

Journal of Nanoelectronics and Optoelectronics ◽

10.1166/jno.2015.1735 ◽

2015 ◽

Vol 10 (3) ◽

pp. 304-308

Author(s):

M. T. B. Kashem ◽

S. Subrina

Keyword(s):

Simulation Study ◽

Field Effect ◽

Field Effect Transistor ◽

Fully Depleted ◽

Interface Charges ◽

Effect Transistor

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