scholarly journals Terahertz detection by epitaxial-graphene field-effect-transistors on silicon carbide

2015 ◽  
Vol 107 (13) ◽  
pp. 131104 ◽  
Author(s):  
F. Bianco ◽  
D. Perenzoni ◽  
D. Convertino ◽  
S. L. De Bonis ◽  
D. Spirito ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene ◽  
Terahertz Detection

scholarly journals Characteristics of solution gated field effect transistors on the basis of epitaxial graphene on silicon carbide

2010 ◽  
Vol 43 (34) ◽  
pp. 345303 ◽  
Author(s):  
Jürgen Ristein ◽  
Wenying Zhang ◽  
Florian Speck ◽  
Markus Ostler ◽  
Lothar Ley ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Epitaxial Graphene

scholarly journals Resonant plasmonic terahertz detection in graphene split-gate field-effect transistors with lateral p–n junctions

2016 ◽  
Vol 49 (31) ◽  
pp. 315103 ◽  
Author(s):  
V Ryzhii ◽  
M Ryzhii ◽  
M S Shur ◽  
V Mitin ◽  
A Satou ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Terahertz Detection

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

scholarly journals Singularity-Enhanced Terahertz Detection in High-Mobility Field-Effect Transistors

2020 ◽  
Vol 13 (6) ◽  
Author(s):  
M. Khavronin ◽  
A. Petrov ◽  
A.E. Kazantsev ◽  
E.I. Nikulin ◽  
D.A. Bandurin
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
High Mobility ◽  
Terahertz Detection

SiC Solid-State Disconnect for High Power System Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Christopher Dries ◽  
Jian Hui Zhao
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Power Systems ◽  
Insertion Loss ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Low Insertion Loss ◽  
A Current

This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

Terahertz Detection with Field-effect Transistors: Intrinsic versus Device Sensitivity Limits

2014 ◽  
Author(s):  
Alvydas Lisauskas ◽  
Sebastian Boppel ◽  
Maris Bauer ◽  
Justinas Zdanevičius ◽  
Jonas Matukas ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Terahertz Detection ◽  
Device Sensitivity

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors

2012 ◽  
Vol 21 (1) ◽  
pp. 017202 ◽  
Author(s):  
Kun Song ◽  
Chang-Chun Chai ◽  
Yin-Tang Yang ◽  
Bin Chen ◽  
Xian-Jun Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
P Type
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