scholarly journals Experimental and theoretical study of 3C-Silicon Carbide nanowire field effect transistors

2010 ◽  
Author(s):  
Κωνσταντίνος Ρογδάκης
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Theoretical Study ◽  
Field Effect Transistors

scholarly journals Modelling of Dynamic Properties of Silicon Carbide Junction Field-Effect Transistors (JFETs)

Energies ◽  
2020 ◽  
Vol 13 (1) ◽  
pp. 187 ◽  
Author(s):  
Kamil Bargieł ◽  
Damian Bisewski ◽  
Janusz Zarębski
Keyword(s):  
Silicon Carbide ◽  
Integrated Circuit ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Dynamic Properties ◽  
Modified Model ◽  
Spice Model ◽  
Capacitance Voltage ◽  
Effect Transistor ◽  
Switching Characteristics

The paper deals with the problem of modelling and analyzing the dynamic properties of a Junction Field Effect Transistor (JFET) made of silicon carbide. An examination of the usefulness of the built-in JFET Simulation Program with Integrated Circuit Emphasis (SPICE) model was performed. A modified model of silicon carbide JFET was proposed to increase modelling accuracy. An evaluation of the accuracy of the modified model was performed by comparison of the measured and calculated capacitance–voltage characteristics as well as the switching characteristics of JFETs.

High-temperature modeling and characterization of 6H silicon carbide metal-oxide-semiconductor field-effect transistors

2005 ◽  
Vol 97 (4) ◽  
pp. 046106 ◽  
Author(s):  
Stephen K. Powell ◽  
Neil Goldsman ◽  
Aivars Lelis ◽  
James M. McGarrity ◽  
Flynn B. McLean
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Temperature Modeling

SiC Solid-State Disconnect for High Power System Applications

2012 ◽  
Vol 717-720 ◽  
pp. 1249-1252 ◽  
Author(s):  
Xue Qing Li ◽  
Petre Alexandrov ◽  
Leonid Fursin ◽  
Christopher Dries ◽  
Jian Hui Zhao
Keyword(s):  
Silicon Carbide ◽  
Solid State ◽  
Power Systems ◽  
Insertion Loss ◽  
High Power ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Experimental Demonstration ◽  
Low Insertion Loss ◽  
A Current

This paper reports the design and experimental demonstration of a novel bi-directional solid-state disconnect (SSD) based on Silicon Carbide (SiC) depletion-mode junction field effect transistors (JFETs) for protecting critical sensitive components in high power systems. The SSD is able to provide a fast disconnect action upon receiving a preset trip current flowing through it and has a very low insertion loss, which makes it suitable for high power applications. For the application in 150kW six-phase power inverter systems, an insertion loss of less than 0.91% and a current fall time of less than 20μs for trip currents of about 800A have been demonstrated experimentally. To the best of our knowledge, there are no other solid-state disconnects available of comparable parameters.

Effects of gate-buffer combined with a p-type spacer structure on silicon carbide metal semiconductor field-effect transistors

2012 ◽  
Vol 21 (1) ◽  
pp. 017202 ◽  
Author(s):  
Kun Song ◽  
Chang-Chun Chai ◽  
Yin-Tang Yang ◽  
Bin Chen ◽  
Xian-Jun Zhang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
P Type

Silicon Carbide Field Effect Transistors for Detection of Ultra-Low Concentrations of Hazardous Volatile Organic Compounds

2014 ◽  
Vol 778-780 ◽  
pp. 1067-1070 ◽  
Author(s):  
Donatella Puglisi ◽  
Jens Eriksson ◽  
Christian Bur ◽  
Andreas Schütze ◽  
Anita Lloyd Spetz ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Volatile Organic Compounds ◽  
Relative Humidity ◽  
Organic Compounds ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Long Term Stability ◽  
Volatile Organic ◽  
Recovery Times ◽  
Response And Recovery

Gas sensitive silicon carbide field effect transistors with nanostructured Ir gate layers have been used for the first time for sensitive detection of volatile organic compounds (VOCs) at part per billion level for indoor air quality applications. Formaldehyde, naphthalene, and benzene have been used as typical VOCs in dry air and under 10% and 20% relative humidity. A single VOC was used at a time to study long-term stability, repeatability, temperature dependence, effect of relative humidity, sensitivity, response and recovery times of the sensors.

Silicon Carbide Power Field-Effect Transistors

MRS Bulletin ◽  
2005 ◽  
Vol 30 (4) ◽  
pp. 293-298 ◽  
Author(s):  
Jian H. Zhao
Keyword(s):  
Silicon Carbide ◽  
High Temperature ◽  
Field Effect ◽  
Recent Progress ◽  
Field Effect Transistors ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
High Power Density ◽  
Advantages And Disadvantages ◽  
Power Switches

AbstractSilicon carbide power field-effect transistors, including power vertical-junction FETs (VJFETs) and metal oxide semiconductor FETs (MOSFETs), are unipolar power switches that have been investigated for high-temperature and high-power-density applications. Recent progress and results will be reviewed for different device designs such as normally-OFF and normally-ON VJFETs, double-implanted MOSFETs, and U-shaped-channel MOSFETs. The advantages and disadvantages of SiC VJFETs and MOSFETs will be discussed. Remaining challenges will be identified.

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