Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

2007 ◽  
Vol 90 (24) ◽  
pp. 241912 ◽  
Author(s):  
R. Duffy ◽  
M. J. H. Van Dal ◽  
B. J. Pawlak ◽  
M. Kaiser ◽  
R. G. R. Weemaes ◽  
...  
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Nucleation And Growth ◽  
Solid Phase Epitaxy ◽  
Random Nucleation

The Fabrication of High-Speed Electronic Devices by Ion-Beam Synthesis of GexSi1-x Strained Layers

1996 ◽  
Vol 438 ◽  
Author(s):  
R. G. Elliman ◽  
H. Jiang ◽  
W. C. Wong ◽  
P. Kringhøj
Keyword(s):  
Oxidation Rate ◽  
Field Effect ◽  
High Speed ◽  
Materials Science ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Ion Beam ◽  
Electronic Devices ◽  
Solid Phase Epitaxy ◽  
Strained Layers

AbstractGexSi1-x, strained layers can be fabricated by Ge implantation and solid-phase epitaxy and can be used in electronic devices to improve their performance. Several important materials science issues are addressed, including the effect of the strain on solid-phase-epitaxy, the effect of oxidation on the implanted Ge distribution, and the effect of Ge on the oxidation rate of Si. The potential of this process is demonstrated by comparing the performance of metal-oxidesemiconductor field-effect-transistors (MOSFETs) employing ion-beam synthesised GeSi strained layer channel regions with that of Si-only devices.

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

2002 ◽  
Vol 747 ◽  
Author(s):  
K. Nomura ◽  
H. Ohta ◽  
K. Ueda ◽  
T. Kamiya ◽  
M. Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Improved Performance ◽  
Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

Bismuth ion-implanted solid-phase epitaxially grown shallow junction for metal–oxide–semiconductor field-effect transistors

2005 ◽  
Vol 86 (3) ◽  
pp. 032104 ◽  
Author(s):  
Shahram Ghanad Tavakoli ◽  
Sungkweon Baek ◽  
Hyo Sik Chang ◽  
Dae Won Moon ◽  
Hyunsang Hwang
Keyword(s):  
Metal Oxide ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Metal Oxide Semiconductor ◽  
Oxide Semiconductor ◽  
Shallow Junction ◽  
Ion Implanted

Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

1997 ◽  
Vol 485 ◽  
Author(s):  
Claudine M. Chen ◽  
Harry A. Atwater
Keyword(s):  
Thin Film ◽  
Grain Size ◽  
Crystal Growth ◽  
Incubation Time ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Grain Sizes ◽  
Random Nucleation ◽  
Nucleation Sites ◽  
Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

Heteroepitaxial Growth of Strontium Titanate on Lanthanum Aluminate Using the Metallo-Organic Decomposition Technique.

1993 ◽  
Vol 317 ◽  
Author(s):  
Gabriel Braunstein ◽  
Gustavo R. Paz-Pujalt ◽  
James F. Elman
Keyword(s):  
Solid Phase ◽  
Precursor Solution ◽  
Solid Phase Epitaxy ◽  
Heteroepitaxial Growth ◽  
Potential Influence ◽  
Ion Channeling ◽  
Random Nucleation ◽  
Lanthanum Aluminate ◽  
Organic Precursors ◽  
Organic Decomposition

ABSTRACTWe demonstrate the heteroepitaxial growth of thin films of SrTiO3 prepared by the method of Metallo-organic decomposition on LaAlO3 substrates. The SrTiO3 films are prepared by spin coating and thermal decomposition of a solution of Metallo-organic precursors on single-crystal, <100> oriented, LaAK>3 substrates. Subsequent heat treatment at 1100 – 1200 °C for 1 h results in the epitaxial alignment of the SrTiO3 films with respect to the LaAlO3 substrate.The degree of alignment of the films appears to depend on their thickness, with thinner films showing better alignment (as determined by ion-channeling measurements). This behavior is interpreted as a result of the competition between solid-phase epitaxy and random nucleation, observed during the crystallization of films prepared by Metallo-organic decomposition. However, since thinner films have been prepared by dilution of the precursor solution, there is also the possibility that the concentration of the precursor solution may influence the crystallization behavior of the films.The potential influence of the precursor formulation on the crystallization mechanism is discussed.

Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

1990 ◽  
Vol 205 ◽  
Author(s):  
J. S. Custer ◽  
Michael O. Thompson ◽  
D. J. Eaglesham ◽  
D. C. Jacobson ◽  
J. M. Poate ◽  
...  
Keyword(s):  
Solid Phase ◽  
Amorphous Material ◽  
Intrinsic Rate ◽  
Amorphous Layer ◽  
Solid Phase Epitaxy ◽  
Small Deviations ◽  
Random Nucleation ◽  
Low Concentrations ◽  
Critical Metal ◽  
Amorphous Si

AbstractThe competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impurities, solid phase epitaxy proceeds with small deviations from the intrinsic rate and with the impurity remaining in the shrinking amorphous layer. At a critical metal concentration in the amorphous layer of ∼ 0.12 at.% rapid random nucleation occurs, halting epitaxy and transforming the remaining amorphous material to polycrystalline Si via grain growth. The nucleation rate is at least 8 orders of magnitude greater than the intrinsic homogeneous rate. At higher Cu concentrations nucleation is observed below the temperature needed for epitaxy (400°C). This nucleation, clearly caused by the presence of Cu or Ag in the layer, may be induced by the impurities exceeding the absolute stability concentration and starting to phase separate, leading to enhanced crystal Si nucleation in the metal rich regions.

Nucleation and growth of Ge on Si(111) in solid phase epitaxy

2000 ◽  
Vol 369 (1-2) ◽  
pp. 116-120 ◽  
Author(s):  
I Suzumura ◽  
M Okada ◽  
A Muto ◽  
Y Torige ◽  
H Ikeda ◽  
...  
Keyword(s):  
Solid Phase ◽  
Nucleation And Growth ◽  
Solid Phase Epitaxy

Crystallization of Silicon Ion Implanted LPCVD Amorphous Silicon Films for High Performance Poly-TFT

1990 ◽  
Vol 182 ◽  
Author(s):  
I-W. Wu ◽  
A. Chiang ◽  
M. Fuse ◽  
L. Öveqoglut ◽  
T. Y. Huang
Keyword(s):  
Grain Size ◽  
Solid Phase ◽  
Activation Barrier ◽  
Silicon Film ◽  
Nucleation And Growth ◽  
Chemical Effect ◽  
X Ray Diffraction ◽  
X Ray ◽  
Random Nucleation ◽  
Average Grain Size

AbstractThe mechanism of silicon ion implantation on the crystallization kinetics and the resulting grain sizes of LPCVD α-Si films have been studied by x-ray diffraction and transmission electron microscopy. The solid-phase crystallization was proceeded by random nucleation and growth from the Si/SiO2 interface. The most effective grain size enhancement was found by targeting the peak concentration of implanted siliconbeyond the Si/SiO2 interface, such that the maximum kinetic energy transfer occurred at that interface. The average grain size increases from ∼0.16 μm to ∼2.0 μm by a Si + implantation at 92KeV and a dose of 2X1015 cm-2 for 0.1 μm silicon film. X-ray diffraction intensities were analyzed to optimize implanting dose, beam current and energy for different film thickness. Grain size enhancement was achieved by retarding the random nucleation and increasing the nucleation activation barrier from ∼3.9eV to ∼4.9 eV for the implanted sample. The amorphous to crystalline growth activation barrier of ∼3.2 eV was not altered by Si+ implantation. The observed nucleation and growth kinetics change may be due to the chemical effect of the recoiled oxygen atoms from the substrate. The field-effect mobilities for both n- and p-channel TFTs increase by a factor of two with deep silicon implant.

Crystallization and Melting of Amorphous Silicon on a Microsecond Time Scale

1986 ◽  
Vol 74 ◽  
Author(s):  
G. L. Olson ◽  
J. A. Roth ◽  
E. Nygren ◽  
A. P. Pogany ◽  
J. S. Williams
Keyword(s):  
Film Thickness ◽  
Time Scale ◽  
Laser Heating ◽  
Solid Phase ◽  
Solid Phase Epitaxy ◽  
Amorphous Films ◽  
Random Nucleation ◽  
Cw Laser ◽  
Time Regime ◽  
Amorphous Si

AbstractMeasurements of the competition beween solid phase epitaxy, solid phase random nucleation, and melting in amorphous Si on a microsecond time scale are reported. We find that the behavior of amorphous Si under microsecond pulsed dye laser irradiation depends strongly on film thickness and temperature. In “thin” (≲1000 Å) films solid phase epitaxy is observed at temperatures up to and exceeding 1300°C with random nucleation dominating at T>1330° C; however, melting of amorphous Si does not occur. In contrast, in “thick” (2600 Å) amorphous films melting is observed at T˜1190°C. These results are discussed with respect to measurements obtained previously in the nanosecond time regime using Q-switched laser heating and in the 0.1–1 millisecond regime using “chopped beam” cw laser heating.

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