Fabrication of p-type fin field-effect-transistors by solid-phase boron diffusion process using thin film doping sources

2007 ◽  
Vol 515 (7-8) ◽  
pp. 3709-3713 ◽  
Author(s):  
Won-Ju Cho ◽  
Sang-Mo Koo
Keyword(s):  
Thin Film ◽  
Diffusion Process ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Boron Diffusion ◽  
P Type

Fabrication of MISFET exhibiting normally-off characteristics using a single-crystalline InGaO3(ZnO)5 thin film

2002 ◽  
Vol 747 ◽  
Author(s):  
K. Nomura ◽  
H. Ohta ◽  
K. Ueda ◽  
T. Kamiya ◽  
M. Hirano ◽  
...  
Keyword(s):  
Thin Film ◽  
Field Effect ◽  
Defect Density ◽  
Field Effect Transistors ◽  
Solid Phase ◽  
Oxide Semiconductor ◽  
Single Crystalline ◽  
Transparent Oxide ◽  
Improved Performance ◽  
Transparent Oxide Semiconductors

ABSTRACTTransparent metal-insulator-semiconductor field-effect transistors (MISFETs) were fabricated using a single-crystalline thin film of an n-type transparent oxide semiconductor, a homologous compound InGaO3(ZnO)5, grown by a reactive solid phase epitaxy method. The transparent MISFET exhibited good performances with “normally-off characteristics”, “an on/off current ratio as large as 105” and “insensitivity to visible light”. Field-effect mobility was about 2 cm2(Vs)-1, which is larger than those reported previously for MISFETs fabricated in transparent oxide semiconductors. These improved performance is thought to result from the low defect density and intrinsic-level carrier concentration of the single-crystalline InGaO3(ZnO)5 film.

Vertical Conduction in the New Field Effect Transistors: p-Type and n-Type Vertical Channel Thin Film Transistors

2014 ◽  
Vol 23 (03n04) ◽  
pp. 1450023 ◽  
Author(s):  
Olivier Bonnaud ◽  
Peng Zhang ◽  
Emmanuel Jacques ◽  
Regis Rogel
Keyword(s):  
Thin Film ◽  
Leakage Current ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Substrate Surface ◽  
Vertical Channel ◽  
Electrical Behavior ◽  
Research Activities ◽  
P Type

In order to pursue the integration, the research activities were oriented during the last years towards channel conduction in a plan perpendicular to the substrate surface while in the traditional architectures the conduction is parallel to the surface, under the gate. In the integrated technologies, this approach led to the FinFET. But in this case, even though the conduction plan is perpendicular to the substrate surface, the direction of the drain currents remains parallel to the substrate. New electronics devices were designed with the channels vertically oriented. In the monolithic technologies, many drawbacks have stopped this trend. However, in the case of thin film technologies, the approach appeared more suitable. The channel conduction is thus vertically oriented. But a drawback comes from the leakage current flowing between source and drain. The introduction of an insulating barrier in-between and the decrease of the thickness of the channel active layer, led to electrical behavior much more suitable for applications. After an overview of the different approaches developed as well in monolithic technologies as in thin film technologies, this presentation will give details on the concept and on the fabrication process of quasi-vertical thin film transistors. The associated electrical results will be described, analyzed and commented.

Thin Film Diamond Field Effect Transistors For High Power Applications

1997 ◽  
Vol 483 ◽  
Author(s):  
Hui Jin Looi ◽  
Lisa Ys Pang ◽  
Richard B. Jackman
Keyword(s):  
Thin Film ◽  
High Power ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Schottky Diodes ◽  
Film Material ◽  
Near Surface ◽  
Suitable Material ◽  
P Type

AbstractEarly predictions that diamond would be a suitable material for high performance, high power devices were not supported by the characteristics of diodes and field effect transistors (FETs) fabricated on boron doped (p-type) thin film material. In this paper commercially accessible polycrystalline thin film diamond has been turned p-type by the incorporation of near surface hydrogen. Schottky diodes and metal-semiconductor FETs (MESFETs) have been fabricated using this approach which display unprecedented performance levels; diodes with a rectification ratio > 106, leakage currents < l nA, no indication of reverse bias breakdown at 100V and an ideality factor of 1.1 have been made. Simple MESFET structures that are capable of withstanding VDS values of 100V with low leakage and current saturation (pinch-off) characteristics have also been fabricated. Predictions based upon experiments performed on these devices suggest that optimised device structures will be capable of operation at power levels up to 20 W/mm, implying that thin film diamond may after all be an interesting material for power applications.

Light Sensitive Polymer Thin Film Transistors Based on BAS-PPE

2004 ◽  
Vol 814 ◽  
Author(s):  
Yifan Xu ◽  
Paul R. Berger ◽  
James N. Wilson ◽  
Uwe H.F. Bunz
Keyword(s):  
Thin Film ◽  
Conducting Polymer ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Incident Light ◽  
Hole Injection ◽  
Polymer Thin Film ◽  
P Type

The photoresponse of polymer field effect transistors (PFETs) based on the 2,5- bis(dibutylaminostyryl)-1,4-phenylene-b-alkyne-b-1,4-bis(2-ethylhexyl)benzene terpolymer (BAS-PPE) is investigated. BAS-PPE is a photoluminescent conducting polymer with a bandgap of 2.25 eV. The BAS-PPE PFETs were fabricated using an open coplanar configuration and light is illuminated onto the top side of the PFETs. A sweep of VDS demonstrates that IDS saturation is suppressed during illumination, which suggests that pinch-off can not be reached since the injection of photo-generated carriers continues unabated. Also, with incident light, the channel can not be turned off, even at high positive gate biases, due to the accumulation of photo- generated carriers. A sweep of VDS also shows that BAS-PPE can act as a p-type polymer and favors hole injection and transport.

scholarly journals Air Processed Cs2AgBiBr6 Lead-free Double Perovskite High-mobility Thin Film Field-effect Transistors

2021 ◽  
Author(s):  
Gnanasampanthan Abiram ◽  
Fatemeh Heidari Gourji ◽  
Selvakumar Pitchaiya ◽  
Punniamoorthy Ravirajan ◽  
Thanihaichelvan Murugathas ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Grain Size ◽  
Threshold Voltage ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Double Perovskite ◽  
Hole Mobility ◽  
Channel Length ◽  
P Type

Abstract This study focuses on the fabrication and characterization of Cs2AgBiBr6 double perovskite thin film for field-effect transistor (FET) applications. The Cs2AgBiBr6 thin films were fabricated using a solution process technique and the observed XRD patterns demonstrate no diffraction peaks of secondary phases, which confirms the phase-pure crystalline nature. The average grain sizes of the spin-deposited film were also calculated by analysing the statistics of grain size in SEM image and was found to be around 412 (±44) nm the larger grain size was also confirmed by the XRD measurements. FETs with different channel lengths of Cs2AgBiBr6 thin films were fabricated on an electrode deposited heavily doped p-type Si substrate with a 300 nm thermally grown SiO2 dielectric under ideal conditions in air processing under ambient pressure and temperature. The Cs2AgBiBr6 FETs showed a p-type nature with a positive threshold voltage. The on current, threshold voltage and hole-mobility of the FETs decreased with increasing channel length. A high average hole mobility of 0.29 cm2s-1V-1 was obtained for the FETs with a channel length of 30 µm, and the hole mobility was reduced by an order of magnitude (0.012 cm2s-1V-1) when the channel length was doubled. The on current and hole-mobility of Cs2AgBiBr6 FETs followed a power fit, which confirmed the dominance of channel length in electrostatic gating in Cs2AgBiBr6 FETs. A very high-hole mobility observed in or FET that could be attributed to the much larger grain size of Cs2AgBiBr6 film made in this work.

scholarly journals Nanonet: Low-temperature-processed tellurium nanowire network for scalable p-type field-effect transistors and a highly sensitive phototransistor array

2021 ◽  
Vol 13 (1) ◽  
Author(s):  
Muhammad Naqi ◽  
Kyung Hwan Choi ◽  
Hocheon Yoo ◽  
Sudong Chae ◽  
Bum Jun Kim ◽  
...  
Keyword(s):  
Low Temperature ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Optical Measurements ◽  
Electrical Performance ◽  
Large Area ◽  
Nanowire Network ◽  
P Type ◽  
Nanowire Networks

AbstractLow-temperature-processed semiconductors are an emerging need for next-generation scalable electronics, and these semiconductors need to feature large-area fabrication, solution processability, high electrical performance, and wide spectral optical absorption properties. Although various strategies of low-temperature-processed n-type semiconductors have been achieved, the development of high-performance p-type semiconductors at low temperature is still limited. Here, we report a unique low-temperature-processed method to synthesize tellurium nanowire networks (Te-nanonets) over a scalable area for the fabrication of high-performance large-area p-type field-effect transistors (FETs) with uniform and stable electrical and optical properties. Maximum mobility of 4.7 cm2/Vs, an on/off current ratio of 1 × 104, and a maximum transconductance of 2.18 µS are achieved. To further demonstrate the applicability of the proposed semiconductor, the electrical performance of a Te-nanonet-based transistor array of 42 devices is also measured, revealing stable and uniform results. Finally, to broaden the applicability of p-type Te-nanonet-based FETs, optical measurements are demonstrated over a wide spectral range, revealing an exceptionally uniform optical performance.

scholarly journals Large Area Emission in p-Type Polymer-Based Light-Emitting Field-Effect Transistors by Incorporating Charge Injection Interlayers

Materials ◽  
2021 ◽  
Vol 14 (4) ◽  
pp. 901
Author(s):  
Gizem Acar ◽  
Muhammad Javaid Iqbal ◽  
Mujeeb Ullah Chaudhry
Keyword(s):  
Field Effect ◽  
Field Effect Transistors ◽  
Charge Injection ◽  
Limiting Factors ◽  
Hole Injection ◽  
Large Area ◽  
Device Structure ◽  
Light Emitting ◽  
Emission Area ◽  
P Type

Organic light-emitting field-effect transistors (LEFETs) provide the possibility of simplifying the display pixilation design as they integrate the drive-transistor and the light emission in a single architecture. However, in p-type LEFETs, simultaneously achieving higher external quantum efficiency (EQE) at higher brightness, larger and stable emission area, and high switching speed are the limiting factors for to realise their applications. Herein, we present a p-type polymer heterostructure-based LEFET architecture with electron and hole injection interlayers to improve the charge injection into the light-emitting layer, which leads to better recombination. This device structure provides access to hole mobility of ~2.1 cm2 V−1 s−1 and EQE of 1.6% at a luminance of 2600 cd m−2. Most importantly, we observed a large area emission under the entire drain electrode, which was spatially stable (emission area is not dependent on the gate voltage and current density). These results show an important advancement in polymer-based LEFET technology toward realizing new digital display applications.

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