Heteroepitaxial Growth of Strontium Titanate on Lanthanum Aluminate Using the Metallo-Organic Decomposition Technique.

MRS Proceedings ◽

10.1557/proc-317-565 ◽

1993 ◽

Vol 317 ◽

Author(s):

Gabriel Braunstein ◽

Gustavo R. Paz-Pujalt ◽

James F. Elman

Keyword(s):

Solid Phase ◽

Precursor Solution ◽

Solid Phase Epitaxy ◽

Heteroepitaxial Growth ◽

Potential Influence ◽

Ion Channeling ◽

Random Nucleation ◽

Lanthanum Aluminate ◽

Organic Precursors ◽

Organic Decomposition

ABSTRACTWe demonstrate the heteroepitaxial growth of thin films of SrTiO3 prepared by the method of Metallo-organic decomposition on LaAlO3 substrates. The SrTiO3 films are prepared by spin coating and thermal decomposition of a solution of Metallo-organic precursors on single-crystal, <100> oriented, LaAK>3 substrates. Subsequent heat treatment at 1100 – 1200 °C for 1 h results in the epitaxial alignment of the SrTiO3 films with respect to the LaAlO3 substrate.The degree of alignment of the films appears to depend on their thickness, with thinner films showing better alignment (as determined by ion-channeling measurements). This behavior is interpreted as a result of the competition between solid-phase epitaxy and random nucleation, observed during the crystallization of films prepared by Metallo-organic decomposition. However, since thinner films have been prepared by dilution of the precursor solution, there is also the possibility that the concentration of the precursor solution may influence the crystallization behavior of the films.The potential influence of the precursor formulation on the crystallization mechanism is discussed.

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Homoepitaxial Alignment of SrTiO3 Thin Films Prepared by Metallo-Organic Decomposition.

MRS Proceedings ◽

10.1557/proc-249-201 ◽

1991 ◽

Vol 249 ◽

Cited By ~ 3

Author(s):

Gabriel Braunstein ◽

Gustavo R. Paz-Pujalt

Keyword(s):

Thin Films ◽

Single Crystal ◽

Solid Phase ◽

Single Crystal Substrate ◽

Layer By Layer ◽

Extrinsic Factors ◽

Ion Channeling ◽

Random Nucleation ◽

Crystal Substrate ◽

Organic Decomposition

ABSTRACTWe demonstrate the homoepitaxial growth of SrTiO3 prepared by the method of metallo-organic decomposition (MOD). Thin films of SrTiO3 are prepared by spin-coating and thermal decomposition of a solution of metallo-organic compounds, on single crystal, <100> oriented, SrTiO3 substrates and subsequently heat treated at temperatures ranging from 650°C to 1100°C for 30 minutes. Heat treatment at 1100°C results in the formation of single-crystal SrTiO3, perfectly aligned with respect to the underlying substrate.Ion-channeling analysis shows that the transformation to singlecrystal material proceeds epitaxially from the coating-substrate interface towards the surface of the sample. Transmission electron microscopy (TEM) studies of partially regrown samples reveal two distinct phases: an epitaxially aligned single-crystal phase, adjacent to the substrate, and a polycrystalline phase on top. On the basis of these observations, it is proposed that the crystallization of the MOD films involves the competition between two processes: layer-by-layer solid phase epitaxy and random nucleation and growth of crystallites. Layerby- layer epitaxy is the predominant crystallization mechanism unless it is inhibited by extrinsic factors like the contamination of the interface between the MOD film and the single-crystal substrate.

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GROWTH AND CHARACTERIZATION OF EPITAXIAL Si/CoSi2 AND Si/CoSi2/Si HETEROSTRUCTURES

MRS Proceedings ◽

10.1557/proc-56-151 ◽

1985 ◽

Vol 56 ◽

Cited By ~ 32

Author(s):

B.D. HUNT ◽

N. LEWIS ◽

E.L. HALL ◽

L.G. JTURNER ◽

L.J. SCHOWALTER ◽

...

Keyword(s):

Surface Roughness ◽

Growth Temperature ◽

Molecular Beam ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Cross Sectional ◽

Reactive Deposition ◽

Ion Channeling ◽

Formation Method

AbstractThin (<200Å), epitaxial CoSi2 films have been grown on (111) Siwafers in a UHV system using a variety of growth techniques including solid phase epitaxy (SPE), reactive deposition epitaxy (RDE), and molecular beam epitaxy (MBE). SEN and TEN studies reveal significant variations in the epitaxial silicide surface morphology as a function of the sillciqd formation method. Pinhole densities are generally greater than 107 cm-2, although some reduction can be achieved by utilizing proper growth techniques. Si epilayers were deposited over the CoSi2 films inthe temperature range from 550ºC to 800ºC, and the reesuulttinng structures have been characterized using SEM, cross—sectional TEN, and ion channeling measurements. These measurements show that the Si epitaxial quality increases with growth temperature, although the average Si surface roughness and the CoSi2 pinhole density also increase as the growth temperature is raised.

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Formation of Buried Epitaxial Si-Ge Alloy Layers in Si Crystal by High Dose Ge ION Implantation

MRS Proceedings ◽

10.1557/proc-235-293 ◽

1991 ◽

Vol 235 ◽

Cited By ~ 9

Author(s):

Kin Man Yu ◽

Ian G. Brown ◽

Seongil Im

Keyword(s):

Ion Implantation ◽

Single Crystal ◽

Lattice Mismatch ◽

Solid Phase ◽

Metal Vapor ◽

Ion Source ◽

Vacuum Arc ◽

High Dose ◽

Solid Phase Epitaxy ◽

Ion Channeling

ABSTRACTWe have synthesized single crystal Si1−xGex alloy layers in Si <100> crystals by high dose Ge ion implantation and solid phase epitaxy. The implantation was performed using the metal vapor vacuum arc (Mevva) ion source. Ge ions at mean energies of 70 and 100 keV and with doses ranging from 1×1016 to to 7×1016 ions/cm2 were implanted into Si <100> crystals at room temperature, resulting in the formation of Si1−xGex alloy layers with peak Ge concentrations of 4 to 13 atomic %. Epitaxial regrowth of the amorphous layers was initiated by thermal annealing at temperatures higher than 500°C. The solid phase epitaxy process, the crystal quality, microstructures, interface morphology and defect structures were characterized by ion channeling and transmission electron microscopy. Compositionally graded single crystal Si1−xGex layers with full width at half maximum ∼100nm were formed under a ∼30nm Si layer after annealing at 600°C for 15 min. A high density of defects was found in the layers as well as in the substrate Si just below the original amorphous/crystalline interface. The concentration of these defects was significantly reduced after annealing at 900°C. The kinetics of the regrowth process, the crystalline quality of the alloy layers, the annealing characteristics of the defects, and the strains due to the lattice mismatch between the alloy and the substrate are discussed.

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Polycrystalline Si Films Fabricated by Low Temperature Selective Nucleation and Solid Phase Epitaxy Process

MRS Proceedings ◽

10.1557/proc-485-67 ◽

1997 ◽

Vol 485 ◽

Cited By ~ 3

Author(s):

Claudine M. Chen ◽

Harry A. Atwater

Keyword(s):

Thin Film ◽

Grain Size ◽

Crystal Growth ◽

Incubation Time ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

Grain Sizes ◽

Random Nucleation ◽

Nucleation Sites ◽

Si Films

AbstractWith a selective nucleation and solid phase epitaxy (SNSPE) process, grain sizes of 10 μm have been achieved to date at 620°C in 100 nrm thick silicon films on amorphous SiO2, with potential for greater grain sizes. Selective nucleation occurs via a thin film reaction between a patterned array of 20 rnm thick indium islands which act as heterogeneous nucleation sites on the amorphous silicon starting material. Crystal growth proceeds by lateral solid phase epitaxy from the nucleation sites, during the incubation time for random nucleation. The largest achievable grain size by SNSPE is thus approximately the product of the incubation time and the solid phase epitaxy rate. Electronic dopants, such as B, P, and Al, are found to enhance the solid phase epitaxy rate and affect the nucleation rate.

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Epitaxy and Nucleation in Cu and Ag Doped Amorphous Si

MRS Proceedings ◽

10.1557/proc-205-69 ◽

1990 ◽

Vol 205 ◽

Cited By ~ 2

Author(s):

J. S. Custer ◽

Michael O. Thompson ◽

D. J. Eaglesham ◽

D. C. Jacobson ◽

J. M. Poate ◽

...

Keyword(s):

Solid Phase ◽

Amorphous Material ◽

Intrinsic Rate ◽

Amorphous Layer ◽

Solid Phase Epitaxy ◽

Small Deviations ◽

Random Nucleation ◽

Low Concentrations ◽

Critical Metal ◽

Amorphous Si

AbstractThe competition between solid phase epitaxy and random nucleation during thermal annealing of amorphous Si implanted with the fast diffusers Cu and Ag has been studied. For low concentrations of these impurities, solid phase epitaxy proceeds with small deviations from the intrinsic rate and with the impurity remaining in the shrinking amorphous layer. At a critical metal concentration in the amorphous layer of ∼ 0.12 at.% rapid random nucleation occurs, halting epitaxy and transforming the remaining amorphous material to polycrystalline Si via grain growth. The nucleation rate is at least 8 orders of magnitude greater than the intrinsic homogeneous rate. At higher Cu concentrations nucleation is observed below the temperature needed for epitaxy (400°C). This nucleation, clearly caused by the presence of Cu or Ag in the layer, may be induced by the impurities exceeding the absolute stability concentration and starting to phase separate, leading to enhanced crystal Si nucleation in the metal rich regions.

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Mechanism for Heteroepitaxial Growth of Transparent P-Type Semiconductor: LaCuOS by Reactive Solid-Phase Epitaxy

Crystal Growth & Design ◽

10.1021/cg034163l ◽

2004 ◽

Vol 4 (2) ◽

pp. 301-307 ◽

Cited By ~ 48

Author(s):

Hidenori Hiramatsu ◽

Hiromichi Ohta ◽

Toshiyuki Suzuki ◽

Chizuru Honjo ◽

Yuichi Ikuhara ◽

...

Keyword(s):

Solid Phase ◽

Solid Phase Epitaxy ◽

Heteroepitaxial Growth ◽

Type Semiconductor ◽

P Type

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Solid phase epitaxy versus random nucleation and growth in sub-20nm wide fin field-effect transistors

Applied Physics Letters ◽

10.1063/1.2749186 ◽

2007 ◽

Vol 90 (24) ◽

pp. 241912 ◽

Cited By ~ 85

Author(s):

R. Duffy ◽

M. J. H. Van Dal ◽

B. J. Pawlak ◽

M. Kaiser ◽

R. G. R. Weemaes ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Solid Phase ◽

Nucleation And Growth ◽

Solid Phase Epitaxy ◽

Random Nucleation

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Synthesis of Dislocation Free Siy(SnxC1−x)1−y Alloys by Molecular Beam Deposition and Solid Phase Epitaxy

MRS Proceedings ◽

10.1557/proc-298-229 ◽

1993 ◽

Vol 298 ◽

Cited By ~ 3

Author(s):

Gang He ◽

Mark D. Savellano ◽

Harry A. Atwater

Keyword(s):

Molecular Beam ◽

Solid Phase ◽

Solid Phase Epitaxy ◽

X Ray Diffraction ◽

Time Resolved ◽

Pure Silicon ◽

Ion Channeling ◽

Transmission Electron ◽

Molecular Beam Deposition ◽

Beam Deposition

AbstractSynthesis of strain-compensated single-crystal Siy(SnxC1-x)1-y alloy films on silicon (100) substrates has been achieved with compositions of tin and carbon greatly exceeding their normal equilibrium solubility in silicon. Amorphous SiSnC alloys were deposited by molecular beam deposition from solid sources followed by thermal annealing. In situ monitoring of crystallization was done using time-resolved reflectivity. Good solid phase epitaxy was observed for Si0.98Sn0.01C0.01, at a rate about 20 times slower than that of pure silicon. Compositional and structural analysis was done using Rutherford backscattering, electron microprobe, ion channeling, x-ray diffraction, and transmission electron microscopy.

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