Influence of Valence Band Offset on Carrier lifetime and Lasing Threshold in Compressive-strained InGaAs Quantum Well Lasers Grown on GaAs

2007 ◽  
Author(s):  
Wataru Susaki ◽  
Masashi Tanaka ◽  
Shinich Kakuda ◽  
Akio Yoshimi ◽  
Akihiro Tomioka
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Carrier Lifetime ◽  
Quantum Well Lasers ◽  
Lasing Threshold ◽  
Band Offset ◽  
Valence Band Offset ◽  
Ingaas Quantum Well

Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

2000 ◽  
Vol 76 (25) ◽  
pp. 3685-3687 ◽  
Author(s):  
J. Hader ◽  
S. W. Koch ◽  
J. V. Moloney ◽  
E. P. O’Reilly
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Quantum Well Lasers ◽  
Band Offset ◽  
Valence Band Offset

Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors

1998 ◽  
Vol 43-44 ◽  
pp. 669-676 ◽  
Author(s):  
H Gamez-Cuatzin ◽  
A Daami ◽  
L Garchery ◽  
I Sagnes ◽  
Y Campidelli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Mos Capacitors

Photoreflectance of a GaAs/In0.5 Ga0.5 P (ordered) Single Quantum Well Grown by Atomic Layer Epitaxy

1989 ◽  
Vol 160 ◽  
Author(s):  
X. Yin ◽  
Fred H. Pollak ◽  
B.T. McDermott ◽  
K.G. Reid ◽  
S.M. Bedair
Keyword(s):  
Quantum Well ◽  
Model Calculation ◽  
Valence Band ◽  
Atomic Layer ◽  
Atomic Layer Epitaxy ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Function Model ◽  
Single Quantum Well

AbstractWe have studied the photoreflectance spectrum at 300K from a GaAs/In0.5 Ga0.5p (ordered) single quantum well fabricated by atomic layer epitaxy. Comparison of the energies of the observed intersubband and barrier transitions with an envelope function model calculation yields a valence band offset of 350 ± 20 meV.

Measurement of the GaAs/AlAs valence‐band offset from a single quantum well near the Γ‐Xcrossover

1995 ◽  
Vol 77 (9) ◽  
pp. 4541-4543 ◽  
Author(s):  
C. N. Yeh ◽  
L. E. McNeil ◽  
L. J. Blue ◽  
T. Daniels‐Race
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Single Quantum ◽  
Valence Band Offset ◽  
Single Quantum Well

Determination of the valence band offset and minority carrier lifetime in Ge-rich layers on relaxed-SiGe

2006 ◽  
Vol 504 (1-2) ◽  
pp. 73-76 ◽  
Author(s):  
S. Chakraborty ◽  
M.K. Bera ◽  
S. Bhattacharya ◽  
P.K. Bose ◽  
C.K. Maiti
Keyword(s):  
Valence Band ◽  
Carrier Lifetime ◽  
Minority Carrier ◽  
Minority Carrier Lifetime ◽  
Band Offset ◽  
Valence Band Offset

Determination of the chemical valence-band offset forZn1−xMnxSe/ZnSemultiple-quantum-well structures of highx

1998 ◽  
Vol 57 (12) ◽  
pp. 7103-7113 ◽  
Author(s):  
P. J. Klar ◽  
D. Wolverson ◽  
J. J. Davies ◽  
W. Heimbrodt ◽  
M. Happ
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Quantum Well Structures
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