Determination of the chemical valence-band offset forZn1−xMnxSe/ZnSemultiple-quantum-well structures of highx

1998 ◽  
Vol 57 (12) ◽  
pp. 7103-7113 ◽  
Author(s):  
P. J. Klar ◽  
D. Wolverson ◽  
J. J. Davies ◽  
W. Heimbrodt ◽  
M. Happ
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Quantum Well Structures

Determination of the valence-band offset of GaAs-(Ga,In)P quantum wells by photoreflectance spectroscopy

1992 ◽  
Vol 46 (3) ◽  
pp. 1886-1888 ◽  
Author(s):  
Gérald Arnaud ◽  
Philippe Boring ◽  
Bernard Gil ◽  
Jean-Charles Garcia ◽  
Jean-Pierre Landesman ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Photoreflectance Spectroscopy

C-V and DLTS Investigations of GaAs/InGaAs/GaAs Strained Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
S. Subramanian ◽  
B. M. Arora ◽  
A. K. Srivastava ◽  
S. Banerjee ◽  
G. Fernandes
Keyword(s):  
Quantum Well ◽  
Band Offset ◽  
Full Width ◽  
Single Quantum ◽  
Single Quantum Well ◽  
Quantum Well Structures ◽  
Strained Quantum Well ◽  
Good Agreement

ABSTRACTIn this paper we report a modified Kroemer's analysis for the determination of the band offset (ΔEc) of single quantum well (SQW) structures from simple C-V measurements. The experimental carrier profile from an MOVPE grown pseudomorphic GaAs/InGaAs/GaAs strained SQW structure shows a sharp accumulation peak bounded by depletion regions on either side. The full width at half maximum of the accumulation peak is comparable to the width of the quantum well. The value of ΔEC obtained from C-V measurement is in good agreement with the values determined by simulation and photoluminescence measurements. DLTS measurements on our SQW samples do not show any peaks which is contrary to the published reports. We believe that it is necessary to carefully isolate the role of interface states, before assigning a DLTS peak to emission from the quantum well.

Influence of the valence-band offset on gain and absorption in GaNAs/GaAs quantum well lasers

2000 ◽  
Vol 76 (25) ◽  
pp. 3685-3687 ◽  
Author(s):  
J. Hader ◽  
S. W. Koch ◽  
J. V. Moloney ◽  
E. P. O’Reilly
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Quantum Well Lasers ◽  
Band Offset ◽  
Valence Band Offset

Determination of a Sb composition in InAs/GaAsSb for negligible valence band offset

2010 ◽  
Author(s):  
Keun-Yong Ban ◽  
Darius Kuciauskas ◽  
Stephen P. Bremnerand ◽  
Christiana B. Honsberg
Keyword(s):  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Si/SiGe valence band offset determination using photoluminescence and DLTS in SiGe quantum-well MOS capacitors

1998 ◽  
Vol 43-44 ◽  
pp. 669-676 ◽  
Author(s):  
H Gamez-Cuatzin ◽  
A Daami ◽  
L Garchery ◽  
I Sagnes ◽  
Y Campidelli ◽  
...  
Keyword(s):  
Quantum Well ◽  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset ◽  
Mos Capacitors

Determination of the valence-band offset for GaInAsSb/InP heterostructure

1999 ◽  
Vol 74 (5) ◽  
pp. 717-719 ◽  
Author(s):  
J. R. Chang ◽  
Y. K. Su ◽  
Y. T. Lu ◽  
D. H. Jaw ◽  
H. P. Shiao ◽  
...  
Keyword(s):  
Valence Band ◽  
Band Offset ◽  
Valence Band Offset

Far-infrared determination of effective mass and valence-band offset in the HgTe/CdTe superlattice

1989 ◽  
Vol 40 (8) ◽  
pp. 5613-5616 ◽  
Author(s):  
S. Perkowitz ◽  
B. Lou ◽  
L. S. Kim ◽  
O. K. Wu ◽  
J. N. Schulman
Keyword(s):  
Effective Mass ◽  
Valence Band ◽  
Far Infrared ◽  
Band Offset ◽  
Valence Band Offset
Sign in / Sign up

Export Citation Format

Share Document