scholarly journals Room temperature deposition of highly dense TiO2thin films by filtered cathodic vacuum arc

2015 ◽  
Author(s):  
E. Guillén ◽  
I. Heras ◽  
G. Rincón Llorente ◽  
F. Lungwitz ◽  
M. Alcon-Camas ◽  
...  
2003 ◽  
Vol 763 ◽  
Author(s):  
H. W. Lee ◽  
Y. G. Wang ◽  
S. P. Lau ◽  
B. K. Tay

AbstractA detailed study of zinc oxide (ZnO) films prepared by filtered cathodic vacuum arc (FCVA) technique was carried out. To deposit the films, a pure zinc target was used and O2 was fed into the chamber. The electrical properties of both undoped and Al-doped ZnO films were studied. For preparing the Al-doped films, a Zn-Al alloy target with 5 wt % Al was used. The resistivity, Hall mobility and carrier concentration of the samples were measured. The lowest resistivity that can be achieved with undoped ZnO films was 3.4×10-3 Ωcm, and that for Al-doped films was 8×10-4 Ωcm. The carrier concentration was found to increase with Al doping.


1996 ◽  
Vol 423 ◽  
Author(s):  
F. J. Clough ◽  
B. Kleinsorge ◽  
W. I. Milne ◽  
J. Robertson

AbstractThis paper describes the design and fabrication of a carbon based thin film transistor (TFT). The active layer is formed from a novel form of amorphous carbon (a-C) known as tetrahedrally bonded amorphous carbon (ta-C) which can be deposited at room temperature using a filtered cathodic vacuum arc (FCVA) technique. In its ‘as grown’ condition, ta-C is p-type and the devices described here, produced using undoped material, exhibit p-channel operation.


2003 ◽  
Vol 94 (3) ◽  
pp. 1597-1604 ◽  
Author(s):  
Y. G. Wang ◽  
S. P. Lau ◽  
H. W. Lee ◽  
S. F. Yu ◽  
B. K. Tay ◽  
...  

Coatings ◽  
2021 ◽  
Vol 11 (2) ◽  
pp. 233
Author(s):  
Elena Guillén ◽  
Matthias Krause ◽  
Irene Heras ◽  
Gonzalo Rincón-Llorente ◽  
Ramón Escobar-Galindo

Titanium oxide films were deposited at room temperature and with no applied bias using a filtered cathodic vacuum arc (FCVA) system in a reactive oxygen environment. The dependence of film growth on two process parameters, the working pressure (Pw) and the O2 partial pressure (pO2), is described in detail. The composition, morphological features, crystalline structure, and optical properties of the deposited films were systematically studied by Rutherford Back Scattering (RBS), Scanning Electron Microscopy (SEM), X-Ray diffraction (XRD), Raman Spectroscopy, UV-vis spectroscopy, and spectroscopic ellipsometry. This systematic investigation allowed the identification of three different groups or growth regimes according to the stoichiometry and the phase structure of the titanium oxide films. RBS analysis revealed that a wide range of TiOx stoichiometries (0.6 < × < 2.2) were obtained, including oxygen-deficient, stoichiometric TiO2 and oxygen-rich films. TiO, Ti2O3, rutile-type TiO2, and amorphous TiO2 phase structures could be achieved, as confirmed both by Raman and XRD. Therefore, the results showed a highly versatile approach, in which different titanium oxide stoichiometries and crystalline phases especially suited for diverse optical applications can be obtained by changing only two process parameters, in a process at room temperature and without applied bias. Of particular interest are crystalline rutile films with high density to be used in ultra-high reflectance metal-dielectric multilayered mirrors, and reduced-TiO2 rutile samples with absorption in the visible range as a very promising photocatalyst material.


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