High characteristic temperature of near-1.3-μm InGaAs/GaAs quantum-dot lasers at room temperature

2000 ◽  
Vol 76 (23) ◽  
pp. 3349-3351 ◽  
Author(s):  
Kohki Mukai ◽  
Yoshiaki Nakata ◽  
Koji Otsubo ◽  
Mitsuru Sugawara ◽  
Naoki Yokoyama ◽  
...  
Keyword(s):  
Quantum Dot ◽  
Room Temperature ◽  
Characteristic Temperature ◽  
Quantum Dot Lasers ◽  
Gaas Quantum Dot

Effects of Spacer Thickness on the Performance of InGaAs/GaAs Quantum Dot Lasers

2000 ◽  
Vol 642 ◽  
Author(s):  
Nien-Tze Yeh ◽  
Wei-Shen Liu ◽  
Shu-Han Chen ◽  
Jen-Inn Chyi
Keyword(s):  
Quantum Dot ◽  
Quantum Efficiency ◽  
Internal Quantum Efficiency ◽  
Characteristic Temperature ◽  
Threshold Current ◽  
Inhomogeneous Broadening ◽  
Quantum Dot Lasers ◽  
Low Threshold ◽  
Spacer Thickness ◽  
Gaas Quantum Dot

ABSTRACTIt is found that the performance of self-assembled In0.5Ga0.5As/GaAs multi-stack quantum dot lasers is sensitive to the GaAs spacer thickness between the dots. Reducing the spacer thickness from 30 nm to 10 nm leads to narrow photoluminescence linewidth, low threshold current, high characteristic temperature and high internal quantum efficiency. This behavior is attributed to inhomogeneous broadening caused by dot size fluctuation related to spacer thickness.

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