Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors

E. Waki; T. Deguchi; A. Nakagawa; T. Egawa

doi:10.1063/1.2896311

Influence of crystalline quality of low-temperature GaN cap layer on current collapse in AlGaN∕GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.2896311 ◽

2008 ◽

Vol 92 (10) ◽

pp. 103507 ◽

Cited By ~ 6

Author(s):

E. Waki ◽

T. Deguchi ◽

A. Nakagawa ◽

T. Egawa

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Crystalline Quality ◽

Current Collapse ◽

Cap Layer ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Anomalous behavior of AlGaN∕GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling

Applied Physics Letters ◽

10.1063/1.2715032 ◽

2007 ◽

Vol 90 (12) ◽

pp. 123505 ◽

Cited By ~ 20

Author(s):

H. F. Sun ◽

C. R. Bolognesi

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Anomalous Behavior ◽

Cryogenic Temperatures ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Induced strain mechanism of current collapse in AlGaN/GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.1412282 ◽

2001 ◽

Vol 79 (16) ◽

pp. 2651-2653 ◽

Cited By ~ 101

Author(s):

G. Simin ◽

A. Koudymov ◽

A. Tarakji ◽

X. Hu ◽

J. Yang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Strain Mechanism ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Gate structure dependent normally-off AlGaN/GaN heterostructure field-effect transistors with p-GaN cap layer

Journal of Physics D Applied Physics ◽

10.1088/1361-6463/ab91ee ◽

2020 ◽

Vol 53 (41) ◽

pp. 415104

Author(s):

Taofei Pu ◽

Yong Chen ◽

Xiaobo Li ◽

Taowei Peng ◽

Xiao Wang ◽

...

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Structure ◽

Cap Layer ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Mechanisms of current collapse and gate leakage currents in AlGaN/GaN heterostructure field effect transistors

Journal of Vacuum Science & Technology B Microelectronics Processing and Phenomena ◽

10.1116/1.1589520 ◽

2003 ◽

Vol 21 (4) ◽

pp. 1844 ◽

Cited By ~ 158

Author(s):

Hideki Hasegawa ◽

Takanori Inagaki ◽

Shinya Ootomo ◽

Tamotsu Hashizume

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Gate Leakage ◽

Leakage Currents ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Impact of surface treatment under the gate on the current collapse of unpassivated AlGaN/GaN heterostructure field-effect transistors

Semiconductor Science and Technology ◽

10.1088/0268-1242/21/1/012 ◽

2005 ◽

Vol 21 (1) ◽

pp. 67-71 ◽

Cited By ~ 4

Author(s):

P Kordoš ◽

J Bernát ◽

D Gregušová ◽

M Marso ◽

H Lüth

Keyword(s):

Surface Treatment ◽

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin Al2O3 dielectric

Applied Physics Letters ◽

10.1063/1.1616648 ◽

2003 ◽

Vol 83 (14) ◽

pp. 2952-2954 ◽

Cited By ~ 196

Author(s):

Tamotsu Hashizume ◽

Shinya Ootomo ◽

Hideki Hasegawa

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Comparison of low-temperature GaN, SiO2, and SiNx as gate insulators on AlGaN∕GaN heterostructure field-effect transistors

Journal of Applied Physics ◽

10.1063/1.2058173 ◽

2005 ◽

Vol 98 (6) ◽

pp. 064506 ◽

Cited By ~ 18

Author(s):

C. J. Kao ◽

M. C. Chen ◽

C. J. Tun ◽

G. C. Chi ◽

J. K. Sheu ◽

...

Keyword(s):

Low Temperature ◽

Field Effect ◽

Field Effect Transistors ◽

Gate Insulators ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Thermal distributions of surface states causing the current collapse in unpassivated AlGaN∕GaN heterostructure field-effect transistors

Applied Physics Letters ◽

10.1063/1.1844610 ◽

2005 ◽

Vol 86 (1) ◽

pp. 012106 ◽

Cited By ~ 11

Author(s):

C. S. Oh ◽

C. J. Youn ◽

G. M. Yang ◽

K. Y. Lim ◽

J. W. Yang

Keyword(s):

Field Effect ◽

Field Effect Transistors ◽

Surface States ◽

Current Collapse ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Influence of different GaN cap layer thicknesses on electron mobility in AlN/GaN heterostructure field-effect transistors

Superlattices and Microstructures ◽

10.1016/j.spmi.2016.09.039 ◽

2016 ◽

Vol 100 ◽

pp. 358-364

Author(s):

Peng Cui ◽

Huan Liu ◽

Zhaojun Lin ◽

Aijie Cheng ◽

Yan Liu ◽

...

Keyword(s):

Electron Mobility ◽

Field Effect ◽

Field Effect Transistors ◽

Cap Layer ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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Plasma-assisted surface treatment for low-temperature annealed ohmic contact on AlGaN/GaN heterostructure field-effect transistors

Chinese Physics B ◽

10.1088/1674-1056/26/3/037201 ◽

2017 ◽

Vol 26 (3) ◽

pp. 037201 ◽

Cited By ~ 2

Author(s):

Lei Wang ◽

Jiaqi Zhang ◽

Liuan Li ◽

Yutaro Maeda ◽

Jin-Ping Ao

Keyword(s):

Low Temperature ◽

Surface Treatment ◽

Ohmic Contact ◽

Field Effect ◽

Field Effect Transistors ◽

Heterostructure Field Effect Transistors ◽

Gan Heterostructure

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