scholarly journals Carrier trapping effects on photoluminescence decay time in InGaN∕GaN quantum wells with nanocluster structures

2007 ◽  
Vol 101 (6) ◽  
pp. 063511 ◽  
Author(s):  
Yen-Cheng Lu ◽  
Cheng-Yen Chen ◽  
Hsiang-Chen Wang ◽  
C. C. Yang ◽  
Yung-Chen Cheng
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Carrier Trapping ◽  
Photoluminescence Decay ◽  
Trapping Effects

Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells

1989 ◽  
Vol 163 ◽  
Author(s):  
J.P. Bergman ◽  
P.O. Holtz ◽  
B. Monemar ◽  
M. Sundaram ◽  
J.L Merz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Decay Time ◽  
Free Exciton ◽  
Temperature Decay ◽  
Photoluminescence Decay ◽  
Decay Times ◽  
Exciton Recombination

AbstractIn this study we present photoluminescence decay measurements of free exciton (FE) and bound exciton (BE) recombination in doped GaAs/AIGaAs quantum wells (QW). It is found that the FE decay time is reduced in the doped QW’s compared to similar undoped samples. The low temperature decay time of the BE is slightly longer than for the FE, with BE decay times from 300 to 600 ps for well widths of 50 to 150 Å, respectively. It is also found that the observed decay of the BE is strongly influenced by the decay time of the FE. This is especially observed in the similarity of the temperature dependence for the FE and BE decay time.

Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms

2012 ◽  
Vol 111 (6) ◽  
pp. 063514 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Syperek ◽  
M. Latkowska ◽  
J. Misiewicz ◽  
V.-M. Korpijärvi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Radiative Recombination ◽  
Photoluminescence Decay

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay ◽  
Self Assembled

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

1989 ◽  
Vol 66 (11) ◽  
pp. 5639-5641 ◽  
Author(s):  
M. D. Sturge ◽  
Janet L. Mackay ◽  
Colette Maloney ◽  
J.K. Pribram
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

Observation of increased photoluminescence decay time in strain‐induced quantum‐well dots

1993 ◽  
Vol 62 (12) ◽  
pp. 1376-1378 ◽  
Author(s):  
I‐Hsing Tan ◽  
Ying‐Lan Chang ◽  
Richard Mirin ◽  
Evelyn Hu ◽  
James Merz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Photoluminescence Decay

Carrier trapping in single quantum wells with different confinement structures

1987 ◽  
Vol 51 (4) ◽  
pp. 226-228 ◽  
Author(s):  
J. Feldmann ◽  
G. Peter ◽  
E. O. Göbel ◽  
K. Leo ◽  
H.‐J. Polland ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Single Quantum ◽  
Carrier Trapping
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