Observation of increased photoluminescence decay time in strain‐induced quantum‐well dots

1993 ◽  
Vol 62 (12) ◽  
pp. 1376-1378 ◽  
Author(s):  
I‐Hsing Tan ◽  
Ying‐Lan Chang ◽  
Richard Mirin ◽  
Evelyn Hu ◽  
James Merz ◽  
...  
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Photoluminescence Decay

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

1989 ◽  
Vol 66 (11) ◽  
pp. 5639-5641 ◽  
Author(s):  
M. D. Sturge ◽  
Janet L. Mackay ◽  
Colette Maloney ◽  
J.K. Pribram
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

Lengthening of the photoluminescence decay time of InAs quantum dots coupled to InGaAs∕GaAs quantum well

2006 ◽  
Vol 100 (5) ◽  
pp. 054313 ◽  
Author(s):  
Yu. I. Mazur ◽  
B. L. Liang ◽  
Zh. M. Wang ◽  
G. G. Tarasov ◽  
D. Guzun ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Quantum Well ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay

Photoluminescence decay time studies of type II GaAs/AlAs quantum‐well structures

1989 ◽  
Vol 65 (9) ◽  
pp. 3606-3609 ◽  
Author(s):  
P. Dawson ◽  
K. J. Moore ◽  
C. T. Foxon ◽  
G. W. ‘t Hooft ◽  
R. P. M. van Hal
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

Temperature Dependence of Photoluminescence Decay Time in Tunneling Bi-Quantum-Well Structures

1991 ◽  
Vol 30 (Part 2, No. 8B) ◽  
pp. L1454-L1457 ◽  
Author(s):  
Yoshihiro Sugiyama ◽  
Atsushi Tackeuchi ◽  
Tsuguo Inata ◽  
Sunichi Muto
Keyword(s):  
Quantum Well ◽  
Temperature Dependence ◽  
Decay Time ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

Photoluminescence Decay Time Studies of Type II GaAs/AlAs Quantum Well Structures

1988 ◽  
Author(s):  
P. Dawson ◽  
K. J. Moore ◽  
C. T. Foxon ◽  
G. W. Hooft ◽  
B. A. Wilson ◽  
...  
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay ◽  
Self Assembled

scholarly journals Two-Component Photoluminescence Decay in InGaN/GaN Multiple Quantum Well Structures

2001 ◽  
Vol 228 (1) ◽  
pp. 121-124 ◽  
Author(s):  
Shih-Wei Feng ◽  
Yung-Chen Cheng ◽  
Chi-Chih Liao ◽  
Yi-Yin Chung ◽  
Chih-Wen Liu ◽  
...  
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures ◽  
Photoluminescence Decay ◽  
Two Component

Localisation of Carriers in Porous Silicon

1996 ◽  
Vol 452 ◽  
Author(s):  
I. Mihalcescu ◽  
J. C. Vial ◽  
R. Romestain
Keyword(s):  
Simple Model ◽  
Porous Silicon ◽  
Temperature Variation ◽  
Time Evolution ◽  
Decay Time ◽  
Additional Assumption ◽  
Shape Evolution ◽  
Photoluminescence Intensity ◽  
Photoluminescence Decay ◽  
Strong Localization

AbstractWe analyze the intensity and decay time evolution of the porous silicon luminescence upon anodic oxidation, aging, chemiral thinning and temperature variation. Strong analogies are pointed out for the photoluminescence intensity as well as for the photoluminescence decay shape evolution. They are interpreted by the variation of the extension of the carrier wavefunction induced by the modification of potential barrier efficiencies. No additional assumption such as hopping of carriers was necessary to explain the decay shapes well fitted by stretched exponential. On the contrary our observations and our simple model are in favor of a strong localization of carriers. Some experimental results are revisited within the frame of this model.

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