Influence of non-radiative recombination on photoluminescence decay time in GaInNAs quantum wells with Ga- and In-rich environments of nitrogen atoms

2012 ◽  
Vol 111 (6) ◽  
pp. 063514 ◽  
Author(s):  
R. Kudrawiec ◽  
M. Syperek ◽  
M. Latkowska ◽  
J. Misiewicz ◽  
V.-M. Korpijärvi ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Radiative Recombination ◽  
Photoluminescence Decay

scholarly journals Carrier trapping effects on photoluminescence decay time in InGaN∕GaN quantum wells with nanocluster structures

2007 ◽  
Vol 101 (6) ◽  
pp. 063511 ◽  
Author(s):  
Yen-Cheng Lu ◽  
Cheng-Yen Chen ◽  
Hsiang-Chen Wang ◽  
C. C. Yang ◽  
Yung-Chen Cheng
Keyword(s):  
Quantum Wells ◽  
Decay Time ◽  
Carrier Trapping ◽  
Photoluminescence Decay ◽  
Trapping Effects

Carrier Dynamics in Poly(Octylthiophene) Gels

2000 ◽  
Vol 660 ◽  
Author(s):  
J-C Vial ◽  
B. Pépin-Donat ◽  
A. Viallat ◽  
P. Fedorko
Keyword(s):  
Decay Time ◽  
Radiative Recombination ◽  
Carrier Transport ◽  
Organic Dyes ◽  
Dilution Effect ◽  
Carrier Dynamics ◽  
Swelling Ratio ◽  
Recombination Rates ◽  
Photoluminescence Decay ◽  
Interchain Interactions

ABSTRACTCarrier dynamics properties in swollen poly(octylthiophene) gels are investigated via their radiative and non-radiative recombination rates (Wr and Wnr respectively) as a function of their swelling ratio (Q). Photoluminescence decay time (τ, in the picosecond range) and luminescence quantum efficiency (QE) are found to strongly increase with Q. This implies that Wr increases and Wnr decreases as Q increases; such a result cannot be understood if one accounts only for the well-known dilution effect observed for organic dyes. Our interpretation is that the enhanced carrier transport due to the increase of interchain interactions observed upon deswelling induces a separation of carriers. Then, these latter present an increased probability to find non-radiative traps. Variation of the conductivity versus Q in doped gels is also discussed.

Decay Measurements of Free and Bound Exciton Recombination in Doped GaAs/GaAIAs Quantum Wells

1989 ◽  
Vol 163 ◽  
Author(s):  
J.P. Bergman ◽  
P.O. Holtz ◽  
B. Monemar ◽  
M. Sundaram ◽  
J.L Merz ◽  
...  
Keyword(s):  
Low Temperature ◽  
Quantum Wells ◽  
Temperature Dependence ◽  
Decay Time ◽  
Free Exciton ◽  
Temperature Decay ◽  
Photoluminescence Decay ◽  
Decay Times ◽  
Exciton Recombination

AbstractIn this study we present photoluminescence decay measurements of free exciton (FE) and bound exciton (BE) recombination in doped GaAs/AIGaAs quantum wells (QW). It is found that the FE decay time is reduced in the doped QW’s compared to similar undoped samples. The low temperature decay time of the BE is slightly longer than for the FE, with BE decay times from 300 to 600 ps for well widths of 50 to 150 Å, respectively. It is also found that the observed decay of the BE is strongly influenced by the decay time of the FE. This is especially observed in the similarity of the temperature dependence for the FE and BE decay time.

The photoluminescence decay time of self-assembled InAs quantum dots covered by InGaAs layers

2006 ◽  
Vol 17 (23) ◽  
pp. 5722-5725 ◽  
Author(s):  
G W Shu ◽  
C K Wang ◽  
J S Wang ◽  
J L Shen ◽  
R S Hsiao ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Decay Time ◽  
Inas Quantum Dots ◽  
Photoluminescence Decay ◽  
Self Assembled

Interwell radiative recombination of a 2D electron gas in electrically biased double quantum wells

1998 ◽  
Vol 41 (2) ◽  
pp. 109-112 ◽  
Author(s):  
Vladislav B Timofeev ◽  
A V Larionov ◽  
J Zeman ◽  
G Martinez ◽  
J Hvam ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Electron Gas ◽  
Double Quantum ◽  
2D Electron Gas

Exciton and intracenter radiative recombination in ZnMnTe and CdMnTe quantum wells with optically active manganese ions

2007 ◽  
Vol 49 (6) ◽  
pp. 1175-1183 ◽  
Author(s):  
V. F. Agekyan ◽  
I. Akai ◽  
N. N. Vasil’ev ◽  
T. Karasawa ◽  
G. Karczewski ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Radiative Recombination ◽  
Optically Active ◽  
Manganese Ions

Photoluminescence decay time studies of type‐II GaAs/AlAs quantum well structures

1989 ◽  
Vol 66 (11) ◽  
pp. 5639-5641 ◽  
Author(s):  
M. D. Sturge ◽  
Janet L. Mackay ◽  
Colette Maloney ◽  
J.K. Pribram
Keyword(s):  
Quantum Well ◽  
Decay Time ◽  
Type Ii ◽  
Quantum Well Structures ◽  
Photoluminescence Decay
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