Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

2007 ◽  
Vol 90 (9) ◽  
pp. 092109 ◽  
Author(s):  
Neerav Kharche ◽  
Marta Prada ◽  
Timothy B. Boykin ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Strained Silicon ◽  
Valley Splitting ◽  
Alloy Disorder

scholarly journals Valley splitting in strained silicon quantum wells

2004 ◽  
Vol 84 (1) ◽  
pp. 115-117 ◽  
Author(s):  
Timothy B. Boykin ◽  
Gerhard Klimeck ◽  
M. A. Eriksson ◽  
Mark Friesen ◽  
S. N. Coppersmith ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Silicon ◽  
Valley Splitting

Valley splitting in triangular Si(001) quantum wells

1996 ◽  
Vol 54 (23) ◽  
pp. 16393-16396 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Valley Splitting

UV Emission Mechanisms in Quaternary AlInGaN Epilayers and Multiple Quantum Wells

2002 ◽  
Vol 722 ◽  
Author(s):  
Mee-Yi Ryu ◽  
C. Q. Chen ◽  
E. Kuokstis ◽  
J. W. Yang ◽  
G. Simin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Light Emitting Diode ◽  
Chemical Vapor ◽  
Excitation Power ◽  
Multiple Quantum Wells ◽  
Multiple Quantum ◽  
Excitation Power Density ◽  
Light Emitting ◽  
Uv Emission ◽  
Alloy Disorder

AbstractWe present the results on investigation and analysis of photoluminescence (PL) dynamics of quaternary AlInGaN epilayers and AlInGaN/AlInGaN multiple quantum wells (MQWs) grown by a novel pulsed metalorganic chemical vapor deposition (PMOCVD). The emission peaks in both AlInGaN epilayers and MQWs show a blueshift with increasing excitation power density. The PL emission of quaternary samples is attributed to recombination of carriers/excitons localized at band-tail states. The PL decay time increases with decreasing emission photon energy, which is a characteristic of localized carrier/exciton recombination due to alloy disorder. The obtained properties of AlInGaN materials grown by a PMOCVD are similar to those of InGaN. This indicates that the AlInGaN system is promising for ultraviolet applications such as the InGaN system for blue light emitting diode and laser diode applications.

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Minigaps in strained silicon quantum wells on tilted substrates

1999 ◽  
Vol 17 (4) ◽  
pp. 1757 ◽  
Author(s):  
T. J. Thornton ◽  
F. Ge ◽  
A. Andresen ◽  
D. Pivin ◽  
J. Bird ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Silicon

scholarly journals Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112, 243107 (2018)]

2020 ◽  
Vol 116 (4) ◽  
pp. 049901
Author(s):  
Samuel F. Neyens ◽  
Ryan H. Foote ◽  
Brandur Thorgrimsson ◽  
T. J. Knapp ◽  
Thomas McJunkin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Critical Role ◽  
Valley Splitting

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

2001 ◽  
Vol 87 (3) ◽  
pp. 277-281 ◽  
Author(s):  
M.J Rack ◽  
T.J Thornton ◽  
D.K Ferry ◽  
Jeff Roberts ◽  
Richard C Westhoff ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strained Silicon

Valley splitting in finite barrier quantum wells

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Timothy B. Boykin ◽  
Neerav Kharche ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Finite Barrier

scholarly journals Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

2012 ◽  
Vol 100 (10) ◽  
pp. 103502 ◽  
Author(s):  
Zhengping Jiang ◽  
Neerav Kharche ◽  
Timothy Boykin ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Interface Disorder ◽  
Sige Quantum Wells
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