Valley splitting in finite barrier quantum wells

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Timothy B. Boykin ◽  
Neerav Kharche ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Finite Barrier

Valley splitting in triangular Si(001) quantum wells

1996 ◽  
Vol 54 (23) ◽  
pp. 16393-16396 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Valley Splitting

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

scholarly journals Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112, 243107 (2018)]

2020 ◽  
Vol 116 (4) ◽  
pp. 049901
Author(s):  
Samuel F. Neyens ◽  
Ryan H. Foote ◽  
Brandur Thorgrimsson ◽  
T. J. Knapp ◽  
Thomas McJunkin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Critical Role ◽  
Valley Splitting

scholarly journals Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

2012 ◽  
Vol 100 (10) ◽  
pp. 103502 ◽  
Author(s):  
Zhengping Jiang ◽  
Neerav Kharche ◽  
Timothy Boykin ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Interface Disorder ◽  
Sige Quantum Wells

VALLEY SPLITTING AND g-FACTOR IN AlAs QUANTUM WELLS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2948-2954
Author(s):  
C. A. DUARTE ◽  
G. M. GUSEV ◽  
T. E. LAMAS ◽  
A. K. BAKAROV ◽  
J.-C. PORTAL
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Zeeman Splitting ◽  
Exchange Contribution ◽  
G Factor ◽  
Valley Splitting ◽  
Perpendicular Component ◽  
Magneto Resistance ◽  
The Magnetic Field

Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Landé g -factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g -factor.

EFFECT OF HYDROSTATIC PRESSURE ON THE BINDING ENERGIES OF EXCITONS IN QUANTUM WELLS

2007 ◽  
Vol 21 (16) ◽  
pp. 2735-2747 ◽  
Author(s):  
G. J. ZHAO ◽  
X. X. LIANG ◽  
S. L. BAN
Keyword(s):  
Dielectric Constant ◽  
Hydrostatic Pressure ◽  
Quantum Wells ◽  
Pressure Effect ◽  
Binding Energies ◽  
Band Offset ◽  
Conduction Band Offset ◽  
Effective Masses ◽  
Finite Barrier ◽  
Effect Of Hydrostatic Pressure

The binding energies of excitons in finite barrier quantum wells under hydrostatic pressure are calculated by a variational method. The influences of hydrostatic pressure on the effective masses of the electron and hole, the dielectric constant, and the conduction band offset between the well and barriers are taken into account in the calculation. The numerical results for the GaAs/Al x Ga 1-x As and GaN/Al x Ga 1-x N quantum wells are given respectively. It is shown that the exciton binding energy increases linearly with the pressure and the pressure effect on arsenide quantum wells is more obvious than that on nitride ones. The exciton binding energies monotonically increase with increasing barrier height, which is related to the Al concentration of the barriers and the influence of the pressure.

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