scholarly journals Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

2012 ◽  
Vol 100 (10) ◽  
pp. 103502 ◽  
Author(s):  
Zhengping Jiang ◽  
Neerav Kharche ◽  
Timothy Boykin ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Interface Disorder ◽  
Sige Quantum Wells

scholarly journals Well-width dependence of valley splitting in Si/SiGe quantum wells

2009 ◽  
Vol 95 (22) ◽  
pp. 222109 ◽  
Author(s):  
Kohei Sasaki ◽  
Ryuichi Masutomi ◽  
Kiyohiko Toyama ◽  
Kentarou Sawano ◽  
Yasuhiro Shiraki ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Sige Quantum Wells

Valley splitting in triangular Si(001) quantum wells

1996 ◽  
Vol 54 (23) ◽  
pp. 16393-16396 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Valley Splitting

Spin lifetimes and g-factor tuning in Si/SiGe quantum wells

2002 ◽  
Vol 13 (2-4) ◽  
pp. 504-507 ◽  
Author(s):  
W Jantsch ◽  
Z Wilamowski ◽  
N Sandersfeld ◽  
M Mühlberger ◽  
F Schäffler
Keyword(s):  
Quantum Wells ◽  
G Factor ◽  
Sige Quantum Wells

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Lateral Transport in Strained SiGe Quantum Wells Doped with Boron

1999 ◽  
Vol 211 (1) ◽  
pp. 495-499 ◽  
Author(s):  
M.S. Kagan ◽  
I.V. Altukhov ◽  
K.A. Korolev ◽  
D.V. Orlov ◽  
V.P. Sinis ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Lateral Transport ◽  
Sige Quantum Wells ◽  
Strained Sige
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