scholarly journals Valley splitting in strained silicon quantum wells

2004 ◽  
Vol 84 (1) ◽  
pp. 115-117 ◽  
Author(s):  
Timothy B. Boykin ◽  
Gerhard Klimeck ◽  
M. A. Eriksson ◽  
Mark Friesen ◽  
S. N. Coppersmith ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Silicon ◽  
Valley Splitting

Valley splitting in strained silicon quantum wells modeled with 2° miscuts, step disorder, and alloy disorder

2007 ◽  
Vol 90 (9) ◽  
pp. 092109 ◽  
Author(s):  
Neerav Kharche ◽  
Marta Prada ◽  
Timothy B. Boykin ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Strained Silicon ◽  
Valley Splitting ◽  
Alloy Disorder

Valley splitting in triangular Si(001) quantum wells

1996 ◽  
Vol 54 (23) ◽  
pp. 16393-16396 ◽  
Author(s):  
G. Grosso ◽  
G. Pastori Parravicini ◽  
C. Piermarocchi
Keyword(s):  
Quantum Wells ◽  
Valley Splitting

Zero Valley Splitting at Zero Magnetic Field for Strained Si/SiGe Quantum Wells

2007 ◽  
Vol 1017 ◽  
Author(s):  
Seungwon Lee ◽  
Paul von Allmen
Keyword(s):  
Quantum Well ◽  
Quantum Wells ◽  
Conduction Band ◽  
Brillouin Zone ◽  
Tilt Angle ◽  
Tight Binding ◽  
Direct Consequence ◽  
Zero Magnetic Field ◽  
Strained Si ◽  
Valley Splitting

AbstractThe electronic structure for a strained silicon quantum well grown on a tilted SiGe substrate is calculated using an empirical tight-binding method. For a zero substrate tilt angle the two lowest minima of the conduction band define a non-zero valley splitting at the center of the Brillouin zone. A finite tilt angle for the substrate results in displacing the two lowest conduction band minima to finite k0 and -k0 in the Brillouin zone with equal energy. The vanishing of the valley splitting for quantum wells grown on tilted substrates is found to be a direct consequence of the periodicity of the steps at the interfaces between the quantum well and the buffer materials.

Minigaps in strained silicon quantum wells on tilted substrates

1999 ◽  
Vol 17 (4) ◽  
pp. 1757 ◽  
Author(s):  
T. J. Thornton ◽  
F. Ge ◽  
A. Andresen ◽  
D. Pivin ◽  
J. Bird ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Strained Silicon

scholarly journals Erratum: “The critical role of substrate disorder in valley splitting in Si quantum wells” [Appl. Phys. Lett. 112, 243107 (2018)]

2020 ◽  
Vol 116 (4) ◽  
pp. 049901
Author(s):  
Samuel F. Neyens ◽  
Ryan H. Foote ◽  
Brandur Thorgrimsson ◽  
T. J. Knapp ◽  
Thomas McJunkin ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Critical Role ◽  
Valley Splitting

Cryogenic field effect transistors using strained silicon quantum wells in Si:SiGe heterostructures grown by APCVD

2001 ◽  
Vol 87 (3) ◽  
pp. 277-281 ◽  
Author(s):  
M.J Rack ◽  
T.J Thornton ◽  
D.K Ferry ◽  
Jeff Roberts ◽  
Richard C Westhoff ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Field Effect ◽  
Field Effect Transistors ◽  
Strained Silicon

Valley splitting in finite barrier quantum wells

2008 ◽  
Vol 77 (24) ◽  
Author(s):  
Timothy B. Boykin ◽  
Neerav Kharche ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Finite Barrier

scholarly journals Effects of interface disorder on valley splitting in SiGe/Si/SiGe quantum wells

2012 ◽  
Vol 100 (10) ◽  
pp. 103502 ◽  
Author(s):  
Zhengping Jiang ◽  
Neerav Kharche ◽  
Timothy Boykin ◽  
Gerhard Klimeck
Keyword(s):  
Quantum Wells ◽  
Valley Splitting ◽  
Interface Disorder ◽  
Sige Quantum Wells

VALLEY SPLITTING AND g-FACTOR IN AlAs QUANTUM WELLS

2009 ◽  
Vol 23 (12n13) ◽  
pp. 2948-2954
Author(s):  
C. A. DUARTE ◽  
G. M. GUSEV ◽  
T. E. LAMAS ◽  
A. K. BAKAROV ◽  
J.-C. PORTAL
Keyword(s):  
Magnetic Field ◽  
Quantum Wells ◽  
Quantum Confinement ◽  
Zeeman Splitting ◽  
Exchange Contribution ◽  
G Factor ◽  
Valley Splitting ◽  
Perpendicular Component ◽  
Magneto Resistance ◽  
The Magnetic Field

Here we present the results of magneto resistance measurements in tilted magnetic field and compare them with calculations. The comparison between calculated and measured spectra for the case of perpendicular fields enable us to estimate the dependence of the valley splitting as a function of the magnetic field and the total Landé g -factor (which is assumed to be independent of the magnetic field). Since both the exchange contribution to the Zeeman splitting as well as the valley splitting are properties associated with the 2D quantum confinement, they depend only on the perpendicular component of the magnetic field, while the bare Zeeman splitting depends on the total magnetic field. This information aided by the comparison between experimental and calculated gray scale maps permits to obtain separately the values of the exchange and the bare contribution to the g -factor.

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